All Transistors. LMBTA93LT3G Datasheet

 

LMBTA93LT3G Datasheet and Replacement


   Type Designator: LMBTA93LT3G
   SMD Transistor Code: 2E
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT23
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LMBTA93LT3G Datasheet (PDF)

 ..1. Size:96K  lrc
 lmbta92lt1g lmbta92lt3g lmbta93lt1g lmbta93lt3g.pdf pdf_icon

LMBTA93LT3G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBTA92LT1GFEATURELMBTA93LT1G High voltage.S-LMBTA92LT1G For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements.S-LMBTA93LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme

 5.1. Size:96K  lrc
 lmbta92lt1g lmbta93lt1g.pdf pdf_icon

LMBTA93LT3G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBTA92LT1GFEATURELMBTA93LT1G High voltage.S-LMBTA92LT1G For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements.S-LMBTA93LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme

 8.1. Size:96K  lrc
 lmbta92lt1g.pdf pdf_icon

LMBTA93LT3G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBTA92LT1GFEATURELMBTA93LT1G High voltage.S-LMBTA92LT1G For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements.S-LMBTA93LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme

 8.2. Size:106K  lrc
 lmbta94lt1g.pdf pdf_icon

LMBTA93LT3G

LESHAN RADIO COMPANY, LTD.LMBTA94LT1GLMBTA94LT1GS-LMBTA94LT1GPNP EPITAXIAL PLANAR TRANSISTORWe declare that the material of product3compliance with RoHS requirements.Description1The LMBTA94LT1G is designed for application 2that requires high voltage.SOT 23Features High Breakdown Voltage: VCEO=400(Min.) at IC=1mA Complementary to LMBTA94LT1GCOLLECTOR

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History: BSY18 | 2SD577 | 2SC3274 | CMBT6517 | DTA124EM3T5G | 2SD1794 | MMBT5551Q

Keywords - LMBTA93LT3G transistor datasheet

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