K8050S-D Datasheet. Specs and Replacement

Type Designator: K8050S-D

SMD Transistor Code: KL9

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 7.5 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: SOT23

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K8050S-D datasheet

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K8050S-D

K8050S NPN Silicon Transistor 2018.09.07 2018.09.07 2018.09.07 2018.09.07 1 000 2017.11.02 2 001 2018.08.22 3 TAPING 003 2018.09.07 K8050S NPN S... See More ⇒

Detailed specifications: 3DD4613H-V, 3DD4617H-R, 3DD4617H-U, 3DD4617H-M, 3DD4617H-V, 3DD4617H-C, K8050S-B, K8050S-C, BD135, K8550S-C, K8550S-D, K8550S-E, KA1980S-O, KA1980S-Y, KA1980S-G, KA1980S-L, KBC807-16

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