All Transistors. K8050S-D Datasheet

 

K8050S-D Datasheet and Replacement


   Type Designator: K8050S-D
   SMD Transistor Code: KL9
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 7.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SOT23
 

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K8050S-D Datasheet (PDF)

 8.1. Size:945K  kodenshi
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K8050S-D

K8050S NPN Silicon Transistor 2018.09.07 2018.09.07 2018.09.07 2018.09.07 1 000 2017.11.02 2 001 2018.08.22 3 TAPING 003 2018.09.07 K8050S NPN S

Datasheet: 3DD4613H-V , 3DD4617H-R , 3DD4617H-U , 3DD4617H-M , 3DD4617H-V , 3DD4617H-C , K8050S-B , K8050S-C , BD135 , K8550S-C , K8550S-D , K8550S-E , KA1980S-O , KA1980S-Y , KA1980S-G , KA1980S-L , KBC807-16 .

Keywords - K8050S-D transistor datasheet

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 K8050S-D equivalent finder
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