K8550S-D Datasheet, Equivalent, Cross Reference Search
Type Designator: K8550S-D
SMD Transistor Code: KV9
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 7.5 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT23
K8550S-D Transistor Equivalent Substitute - Cross-Reference Search
K8550S-D Datasheet (PDF)
8.1. Size:982K kodenshi
k8550s.pdf
k8550s.pdf
K8550S PNP Silicon Transistor Descriptions PIN Connection General purpose Bipolar Transistor Features Large collector current Suitable for low-Voltage operation because of Its low saturation voltage Complementary pair with K8050S Ordering Information Type NO. Marking Package Code KV K8550S SOT-23 Device Code HFE Grade
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
