All Transistors. K8550S-E Datasheet

 

K8550S-E Datasheet and Replacement


   Type Designator: K8550S-E
   SMD Transistor Code: KVA
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 7.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 280
   Noise Figure, dB: -
   Package: SOT23
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K8550S-E Datasheet (PDF)

 8.1. Size:982K  kodenshi
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K8550S-E

K8550S PNP Silicon Transistor Descriptions PIN Connection General purpose Bipolar Transistor Features Large collector current Suitable for low-Voltage operation because of Its low saturation voltage Complementary pair with K8050S Ordering Information Type NO. Marking Package Code KV K8550S SOT-23 Device Code HFE Grade

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: LDTD123YLT1G | MJ802G | 2T3309A | 2SC5302 | 2SC381 | DDTB123EU | 2SD189

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