All Transistors. K8550S-E Datasheet

 

K8550S-E Datasheet and Replacement


   Type Designator: K8550S-E
   SMD Transistor Code: KVA
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 7.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 280
   Noise Figure, dB: -
   Package: SOT23
 

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K8550S-E Datasheet (PDF)

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K8550S-E

K8550S PNP Silicon Transistor Descriptions PIN Connection General purpose Bipolar Transistor Features Large collector current Suitable for low-Voltage operation because of Its low saturation voltage Complementary pair with K8050S Ordering Information Type NO. Marking Package Code KV K8550S SOT-23 Device Code HFE Grade

Datasheet: 3DD4617H-M , 3DD4617H-V , 3DD4617H-C , K8050S-B , K8050S-C , K8050S-D , K8550S-C , K8550S-D , 2SD2499 , KA1980S-O , KA1980S-Y , KA1980S-G , KA1980S-L , KBC807-16 , KBC807-25 , KBC807-40 , KBC817-16 .

History: KA1980S-O

Keywords - K8550S-E transistor datasheet

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