KA1980S-L Specs and Replacement
Type Designator: KA1980S-L
SMD Transistor Code: CAL*
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: SOT23
KA1980S-L Transistor Equivalent Substitute - Cross-Reference Search
KA1980S-L detailed specifications
ka1980s.pdf
KA1980S PNP Silicon Transistor Description PIN Connection General small signal amplifier Features Low collector saturation voltage VCE(sat)=-0.3V(Max.) Low output capacitance Cob=4pF(Typ.) Complementary pair with KC5343S Ordering Information Type NO. Marking Package Code CA KA1980S SOT-23 Device Code HFE Grade Yea... See More ⇒
Detailed specifications: K8050S-C , K8050S-D , K8550S-C , K8550S-D , K8550S-E , KA1980S-O , KA1980S-Y , KA1980S-G , 2SC2625 , KBC807-16 , KBC807-25 , KBC807-40 , KBC817-16 , KBC817-25 , KBC817-40 , KBT2222AC , KBT2907AC .
Keywords - KA1980S-L transistor specs
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