KBC817-25 Datasheet. Specs and Replacement

Type Designator: KBC817-25  📄📄 

SMD Transistor Code: NAB.

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 16 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: SOT23

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KBC817-25 datasheet

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 kbc817-16 kbc817-25 kbc817-40c.pdf pdf_icon

KBC817-25

KBC817 16/25/40C N P N S i l i c o n T r a n s i s t o r 2018.03.02 2018.03.02 2018.03.02 2018.03.02 1 000 2018.03.02 AUK Dalian 1 KBC817 16/25/40C NPN Silicon Transistor Descriptions ... See More ⇒

Detailed specifications: KA1980S-O, KA1980S-Y, KA1980S-G, KA1980S-L, KBC807-16, KBC807-25, KBC807-40, KBC817-16, 2SC2879, KBC817-40, KBT2222AC, KBT2907AC, KBT3904C, KBT5401C, KBT5551C, KC5343S, KC5344S

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