KBC817-25 Datasheet and Replacement
Type Designator: KBC817-25
SMD Transistor Code: NAB.
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 16 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT23
KBC817-25 Substitution
KBC817-25 Datasheet (PDF)
kbc817-16 kbc817-25 kbc817-40c.pdf

KBC817 16/25/40C N P N S i l i c o n T r a n s i s t o r 2018.03.02 2018.03.02 2018.03.02 2018.03.02 1 000 2018.03.02 AUK Dalian 1 KBC817 16/25/40C NPN Silicon Transistor Descriptions
Datasheet: KA1980S-O , KA1980S-Y , KA1980S-G , KA1980S-L , KBC807-16 , KBC807-25 , KBC807-40 , KBC817-16 , 13005 , KBC817-40 , KBT2222AC , KBT2907AC , KBT3904C , KBT5401C , KBT5551C , KC5343S , KC5344S .
History: TIP135 | 3DK9 | 3DK8 | 2SB1199 | BDX25-10
Keywords - KBC817-25 transistor datasheet
KBC817-25 cross reference
KBC817-25 equivalent finder
KBC817-25 lookup
KBC817-25 substitution
KBC817-25 replacement
History: TIP135 | 3DK9 | 3DK8 | 2SB1199 | BDX25-10



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