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KBC817-25 Specs and Replacement


   Type Designator: KBC817-25
   SMD Transistor Code: NAB.
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 16 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SOT23

 KBC817-25 Transistor Equivalent Substitute - Cross-Reference Search

   

KBC817-25 detailed specifications

 ..1. Size:584K  kodenshi
 kbc817-16 kbc817-25 kbc817-40c.pdf pdf_icon

KBC817-25

KBC817 16/25/40C N P N S i l i c o n T r a n s i s t o r 2018.03.02 2018.03.02 2018.03.02 2018.03.02 1 000 2018.03.02 AUK Dalian 1 KBC817 16/25/40C NPN Silicon Transistor Descriptions ... See More ⇒

Detailed specifications: KA1980S-O , KA1980S-Y , KA1980S-G , KA1980S-L , KBC807-16 , KBC807-25 , KBC807-40 , KBC817-16 , C3198 , KBC817-40 , KBT2222AC , KBT2907AC , KBT3904C , KBT5401C , KBT5551C , KC5343S , KC5344S .

History: MJE13009K | 2SB1631 | PDTA143XM

Keywords - KBC817-25 transistor specs

 KBC817-25 cross reference
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