KBC817-25 Datasheet, Equivalent, Cross Reference Search
Type Designator: KBC817-25
SMD Transistor Code: NAB.
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 16 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT23
KBC817-25 Transistor Equivalent Substitute - Cross-Reference Search
KBC817-25 Datasheet (PDF)
..1. Size:584K kodenshi
kbc817-16 kbc817-25 kbc817-40c.pdf
kbc817-16 kbc817-25 kbc817-40c.pdf
KBC817 16/25/40C N P N S i l i c o n T r a n s i s t o r 2018.03.02 2018.03.02 2018.03.02 2018.03.02 1 000 2018.03.02 AUK Dalian 1 KBC817 16/25/40C NPN Silicon Transistor Descriptions
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: KT8107E
