BCH817-16L Specs and Replacement

Type Designator: BCH817-16L

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23

 BCH817-16L Substitution

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BCH817-16L datasheet

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 bch817-16l bch817-25l bch817-40l nsvbch817-16l nsvbch817-25l nsvbch817-40l.pdf pdf_icon

BCH817-16L

General Purpose Transistors NPN Silicon BCH817-16L/25L/40L, NSVBCH817-16L/25L/40L www.onsemi.com Features 175 C TJ(max) - Rated for High Temperature, Mission Critical COLLECTOR Applications 3 NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Devices are Pb-Free, ... See More ⇒

Detailed specifications: BC859CLT1G, BC859CMTF, BC860AMTF, BC860BMTF, BC860CMTF, BCH807-16L, BCH807-25L, BCH807-40L, C1815, BCH817-25L, BCH817-40L, BCP56T1, BCX18LT1G, BD13510STU, BD13516S, BD13516STU, BD1356STU

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