FJL4215RTU Datasheet, Equivalent, Cross Reference Search
Type Designator: FJL4215RTU
SMD Transistor Code: J4215R
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 17 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 360 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO264
FJL4215RTU Transistor Equivalent Substitute - Cross-Reference Search
FJL4215RTU Datasheet (PDF)
2sa1943rtu 2sa1943otu fjl4215rtu fjl4215otu.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fjl4215.pdf
FJL4215Audio Power Amplifier High Current Capability IC = -15A) High Power Dissipation Wide S.O.A Complement to FJL4315TO-26411.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -230 VVCEO Collector-Emitter Voltage -230 VVEBO Emitter-
2sa1943 fjl4215.pdf
January 20092SA1943/FJL4215PNP Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = -17A. High Power Dissipation : 150watts. TO-2641 High Frequency : 30MHz.1.Base 2.Collector 3.Emitter High Voltage : VCEO= -250V Wide S.O.A for reliable operation. Ex
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
