FJP1943RTU Specs and Replacement

Type Designator: FJP1943RTU

SMD Transistor Code: J1943R

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 230 V

Maximum Collector-Emitter Voltage |Vce|: 230 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 360 pF

Forward Current Transfer Ratio (hFE), MIN: 55

Noise Figure, dB: -

Package: TO220

 FJP1943RTU Substitution

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FJP1943RTU datasheet

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FJP1943RTU

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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FJP1943RTU

November 2008 FJP1943 PNP Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = -15A. 1 High Power Dissipation 80watts. TO-220 High Frequency 30MHz. High Voltage VCEO= -230V 1.Base 2.Collector 3.Emitter Wide S.O.A for reliable operation. Excellent ... See More ⇒

Detailed specifications: FJL4215RTU, FJP13007H1TU, FJP13007H1TU-F080, FJP13007H2TU, FJP13007H2TU-F080, FJP13007TU, FJP13009TU, FJP1943OTU, SS8050, FJP5027, FJPF13009H1TU, FJPF13009H2TU, FJPF2145TU, FJT44KTF, FJT44TF, KSA1015GRTA, KSA1015YTA

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