FJP1943RTU Datasheet, Equivalent, Cross Reference Search
Type Designator: FJP1943RTU
SMD Transistor Code: J1943R
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 230 V
Maximum Collector-Emitter Voltage |Vce|: 230 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 360 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO220
FJP1943RTU Transistor Equivalent Substitute - Cross-Reference Search
FJP1943RTU Datasheet (PDF)
fjp1943rtu fjp1943otu.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fjp1943.pdf
November 2008FJP1943PNP Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = -15A.1 High Power Dissipation : 80watts.TO-220 High Frequency : 30MHz. High Voltage : VCEO= -230V 1.Base 2.Collector 3.Emitter Wide S.O.A for reliable operation. Excellent
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N906
