KSE45H10 Datasheet. Specs and Replacement
Type Designator: KSE45H10 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 230 pF
Forward Current Transfer Ratio (hFE), MIN: 35
Package: TO220
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KSE45H10 datasheet
kse45h1 kse45h2 kse45h4 kse45h5 kse45h7 kse45h8 kse45h10 kse45h11.pdf ![]()
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
KSE45H Series General Purpose Power Switching Applications Low Collector-Emitter Saturation Voltage VCE(sat) = -1V (MAX)@-8A Fast Switching Speeds Complement to KSE44H TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage KSE45H 1,2 - 3... See More ⇒
Detailed specifications: KSA1015GRTA, KSA1015YTA, KSC2383OTA, KSC2383YTA, KSC5338DW, KSC5502DTM, KSC5502DTTU, KSE45H1, 2SC5198, KSE45H11, KSE45H2, KSE45H4, KSE45H5, KSE45H7, KSE45H8, KSP2222ABU, KSP2222ATA
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BJT Parameters and How They Relate
History: BUR608 | 2SC2383-Y | KT837Zh
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