2SA1220A
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1220A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20
W
Maximum Collector-Base Voltage |Vcb|: 160
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 1.2
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 160
MHz
Collector Capacitance (Cc): 30
pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package:
TO126
- BJT Cross-Reference Search
2SA1220A
Datasheet (PDF)
..2. Size:189K jmnic
2sa1220 2sa1220a.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1220 2SA1220A DESCRIPTION With TO-126 package Complement to type 2SC2690/2690A APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITION
..3. Size:214K inchange semiconductor
2sa1220 2sa1220a.pdf 

isc Silicon PNP Power Transistors 2SA1220/ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-: V = -120V(Min)-2SA1220(BR)CEO= -160V(Min)-2SA1220AComplement to Type 2SC2690/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequency power amplifierHigh frequency power amplifierABSOLU
7.1. Size:134K inchange semiconductor
2sa1220 a.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1220/A DESCRIPTION Good Linearity of hFEHigh Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A Complement to Type 2SC2690/A APPLICATIONS Adudio frequency power amplifier High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25)
8.1. Size:136K toshiba
2sa1225.pdf 

2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SC2983 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -160 VCollector-emitter voltage VCEO -160 VEmitter-
8.2. Size:85K nec
2sa1221 2sa1222.pdf 

DATA SHEETSILICON TRANSISTORS2SA1221, 1222PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSFEATURES PACKAGE DRAWING (UNIT: mm) Ideal for use of high withstanding voltage current such as TVvertical deflection output, audio output, and variable powersupplies. Complementary transistor with 2SC2958 and 2SC2959VCEO = 140 V: 2SA1221/2SC2958VCEO = 160 V: 2S
8.5. Size:1433K jiangsu
2sa1225.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors2SA1225 TRANSISTOR (PNP)TO-252-2L FEATURES 1. BASE High Transition Frequency Complementary to 2SC29832. COLLECTOR 3 .EMITTER APPLICATIONS Power Amplifier Applications Driver Stage Amplifier Applications Equivalent Circuit A1225=Device code A1225Solid dot=Gre
8.6. Size:160K jmnic
2sa1227 2sa1227a.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1227 2SA1227A DESCRIPTION With TO-3PFa package Complement to type 2SC2987/2987A High power dissipation APPLICATIONS For use in audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT
8.7. Size:916K kexin
2sa1226.pdf 

SMD Type TransistorsPNP Transistors2SA1226SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-30mA1 2 Collector Emitter Voltage VCEO=-40V+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Col
8.8. Size:114K inchange semiconductor
2sa1227 2sa1227a.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1227 2SA1227A DESCRIPTION With TO-3PFa package Complement to type 2SC2987/2987A High power dissipation APPLICATIONS For use in audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDI
8.9. Size:222K inchange semiconductor
2sa1227.pdf 

isc Silicon PNP Power Transistor 2SA1227DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2987Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
8.10. Size:184K inchange semiconductor
2sa1225.pdf 

isc Silicon PNP Power Transistor 2SA1225DESCRIPTIONHigh transition frequency100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC2983APPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
8.11. Size:224K inchange semiconductor
2sa1227a.pdf 

isc Silicon PNP Power Transistor 2SA1227ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2987AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Datasheet: 2SA1216O
, 2SA1216P
, 2SA1216Y
, 2SA1217
, 2SA1218
, 2SA1219
, 2SA122
, 2SA1220
, B647
, 2SA1221
, 2SA1222
, 2SA1223
, 2SA1224
, 2SA1225
, 2SA1226
, 2SA1227
, 2SA1227A
.