All Transistors. MMJT350 Datasheet

 

MMJT350 Datasheet and Replacement


   Type Designator: MMJT350
   SMD Transistor Code: T350
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2.75 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT223
 

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MMJT350 Datasheet (PDF)

 ..1. Size:184K  onsemi
 mmjt350.pdf pdf_icon

MMJT350

MMJT350Bipolar Power TransistorsPNP SiliconBipolar power transistors are designed for use in line-operatedapplications such as low power, line-operated series pass andswitching regulators requiring PNP capability.www.onsemi.comFeatures0.5 AMPERE High Collector-Emitter Sustaining VoltagePOWER TRANSISTOR Excellent DC Current GainPNP SILICON Epoxy Meets UL 94 V-0

 0.1. Size:137K  onsemi
 mmjt350t1g.pdf pdf_icon

MMJT350

MMJT350T1G,SMMJT350T1GBipolar Power TransistorsPNP SiliconBipolar power transistors are designed for use in line-operatedhttp://onsemi.comapplications such as low power, line-operated series pass andswitching regulators requiring PNP capability.0.5 AMPEREFeaturesPOWER TRANSISTOR High Collector-Emitter Sustaining Voltage -PNP SILICONVCEO(sus) = 300 Vdc @ IC 300 VOL

Datasheet: MJ14001G , MJE350G , MMBT5401LT3G , MMBT5401M3 , MMBTA42LT , MMBTA43L , MMBTA93L , MMBTH10-04LT1G , 2N5551 , MPSA42G , MPSA42RL1G , MPSA42RLRAG , MPSA42RLRMG , MPSA42RLRPG , MPSA42ZL1G , MSB1218A , MSB92AS1WT1G .

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