MMJT350 Specs and Replacement
Type Designator: MMJT350
SMD Transistor Code: T350
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2.75 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Package: SOT223
MMJT350 Substitution
- BJT ⓘ Cross-Reference Search
MMJT350 datasheet
MMJT350 Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. www.onsemi.com Features 0.5 AMPERE High Collector-Emitter Sustaining Voltage POWER TRANSISTOR Excellent DC Current Gain PNP SILICON Epoxy Meets UL 94 V-0... See More ⇒
MMJT350T1G, SMMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line-operated http //onsemi.com applications such as low power, line-operated series pass and switching regulators requiring PNP capability. 0.5 AMPERE Features POWER TRANSISTOR High Collector-Emitter Sustaining Voltage - PNP SILICON VCEO(sus) = 300 Vdc @ IC 300 VOL... See More ⇒
Detailed specifications: MJ14001G, MJE350G, MMBT5401LT3G, MMBT5401M3, MMBTA42LT, MMBTA43L, MMBTA93L, MMBTH10-04LT1G, BD139, MPSA42G, MPSA42RL1G, MPSA42RLRAG, MPSA42RLRMG, MPSA42RLRPG, MPSA42ZL1G, MSB1218A, MSB92AS1WT1G
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