NJVMJD32CT4G-VF01 Specs and Replacement

Type Designator: NJVMJD32CT4G-VF01

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: DPAK

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NJVMJD32CT4G-VF01 datasheet

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NJVMJD32CT4G-VF01

NJVMJD3xxT4G-VF01 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS Straight Lead Version in Plastic Sleeves ( 1 Suffix) 3 AMPERES Lead Formed Version in 16 mm ... See More ⇒

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NJVMJD32CT4G-VF01

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NJVMJD32CT4G-VF01

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Detailed specifications: MSB92AS1WT1G, MSC2712YT1G, MSD601-RT1, MSD601-ST1, NJV4030P, NJVMJB44H11, NJVMJB45H11, NJVMJD31CT4G-VF01, 13007, NSB4904DW1T2G, NSS1C200MZ4, NSS20200DMT, NSS40300MZ4, NSS40301MZ4, NSS60101DMR6, NSS60200DMT, NSS60200L

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