NSS60101DMR6 Specs and Replacement

Type Designator: NSS60101DMR6

SMD Transistor Code: RAD

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.53 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SC74

 NSS60101DMR6 Substitution

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NSS60101DMR6 datasheet

 ..1. Size:233K  onsemi

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NSS60101DMR6

Low VCE(sat) NPN Transistors, 60 V, 1 A NSS60101DMR6 ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. ... See More ⇒

 4.1. Size:211K  onsemi

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NSS60101DMR6

DATA SHEET www.onsemi.com Low VCE(sat) NPN Transistors 60 Volt, 1 Amp NPN Low VCE(sat) Transistors 60 V, 1 A MARKING NSS60101DMT DIAGRAM onsemi s e2PowerEdge family of low VCE(sat) transistors are 1 6 WDFN6 miniature surface mount devices featuring ultra low saturation voltage AN MG 2 5 CASE 506AN G (VCE(sat)) and high current gain capability. These are designed for use 3 4 1... See More ⇒

 7.1. Size:116K  onsemi

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NSS60101DMR6

NSS60100DMT 60 V, 1 A, Low VCE(sat) PNP Transistors ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. ... See More ⇒

 9.1. Size:107K  onsemi

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NSS60101DMR6

NSS60601MZ4 60 V, 6.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where http //onsemi.com affordable efficient energy control is important. Typica... See More ⇒

Detailed specifications: NJVMJB45H11, NJVMJD31CT4G-VF01, NJVMJD32CT4G-VF01, NSB4904DW1T2G, NSS1C200MZ4, NSS20200DMT, NSS40300MZ4, NSS40301MZ4, 13009, NSS60200DMT, NSS60200L, NSS60201SMT, NSS60600MZ4, NST1601CL, NST3904MX2, NST3906DXV6T1, NST3906MX2

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