All Transistors. NSS60101DMR6 Datasheet

 

NSS60101DMR6 Datasheet, Equivalent, Cross Reference Search


   Type Designator: NSS60101DMR6
   SMD Transistor Code: RAD
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.53 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SC74

 NSS60101DMR6 Transistor Equivalent Substitute - Cross-Reference Search

   

NSS60101DMR6 Datasheet (PDF)

 ..1. Size:233K  onsemi
nss60101dmr6.pdf

NSS60101DMR6
NSS60101DMR6

Low VCE(sat) NPNTransistors, 60 V, 1 ANSS60101DMR6ON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 4.1. Size:211K  onsemi
nss60101dmt.pdf

NSS60101DMR6
NSS60101DMR6

DATA SHEETwww.onsemi.comLow VCE(sat) NPN Transistors 60 Volt, 1 AmpNPN Low VCE(sat) Transistors60 V, 1 AMARKINGNSS60101DMTDIAGRAMonsemis e2PowerEdge family of low VCE(sat) transistors are1 6WDFN6miniature surface mount devices featuring ultra low saturation voltage AN MG2 5CASE 506ANG(VCE(sat)) and high current gain capability. These are designed for use3 41

 7.1. Size:116K  onsemi
nss60100dmt.pdf

NSS60101DMR6
NSS60101DMR6

NSS60100DMT60 V, 1 A, Low VCE(sat) PNPTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 9.1. Size:107K  onsemi
nss60601mz4-d.pdf

NSS60101DMR6
NSS60101DMR6

NSS60601MZ460 V, 6.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications wherehttp://onsemi.comaffordable efficient energy control is important.Typica

 9.2. Size:249K  onsemi
nss60200dmt.pdf

NSS60101DMR6
NSS60101DMR6

DATA SHEETwww.onsemi.comLow VCE(sat) PNP Transistors 60 Volt, 2 AmpPNP Low VCE(sat) Transistors60 V, 2 AMARKINGNSS60200DMTDIAGRAMonsemis e2PowerEdge family of low VCE(sat) transistors are1miniature surface mount devices featuring ultra low saturation voltageWDFN6AD M(VCE(sat)) and high current gain capability. These are designed for use CASE 506ANin low voltage, h

 9.3. Size:206K  onsemi
nss60201smt.pdf

NSS60101DMR6
NSS60101DMR6

DATA SHEETwww.onsemi.comLow VCE(sat) NPN Transistor 60 Volt, 2 AmpNPN Low VCE(sat) Transistor60 V, 2 AMARKINGNSS60201SMTDIAGRAMonsemis e2PowerEdge family of low VCE(sat) transistors are1 6WDFN6miniature surface mount devices featuring ultra low saturation voltage AQ MG2 5CASE 506ANG(VCE(sat)) and high current gain capability. These are designed for use3 41

 9.4. Size:110K  onsemi
nss60601mz4t1g.pdf

NSS60101DMR6
NSS60101DMR6

NSS60601MZ4,NSV60601MZ4T1G,NSV60601MZ4T3G60 V, 6.0 A, Low VCE(sat)NPN Transistorhttp://onsemi.comON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation60 VOLTS, 6.0 AMPSvoltage (VCE(sat)) and high current gain capability. These are designed2.0 WATTSfor use in low voltage, high speed switching applications

 9.5. Size:108K  onsemi
nss60601mz4.pdf

NSS60101DMR6
NSS60101DMR6

NSS60601MZ460 V, 6.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedhttp://onsemi.comfor use in low voltage, high speed switching applications whereaffordable efficient energy control is important.60 VOL

 9.6. Size:69K  onsemi
nss60600mz4.pdf

NSS60101DMR6
NSS60101DMR6

NSS60600MZ460 V, 6.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications wherewww.onsemi.comaffordable efficient energy control is important.Typical a

 9.7. Size:127K  onsemi
nss60201lt1g.pdf

NSS60101DMR6
NSS60101DMR6

NSS60201LT1G60 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 9.8. Size:148K  onsemi
nss60200l.pdf

NSS60101DMR6
NSS60101DMR6

NSS60200L60 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.-

 9.9. Size:127K  onsemi
nss60200l-d.pdf

NSS60101DMR6
NSS60101DMR6

NSS60200LT1G60 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 9.10. Size:132K  onsemi
nss60600mz4t1g.pdf

NSS60101DMR6
NSS60101DMR6

NSS60600MZ4,NSV60600MZ4T1G,NSV60600MZ4T3G60 V, 6.0 A, Low VCE(sat)PNP Transistorhttp://onsemi.comON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation-60 VOLTS, 6.0 AMPSvoltage (VCE(sat)) and high current gain capability. These are designed2.0 WATTSfor use in low voltage, high speed switching application

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: CSA988E | SK3244 | NSBC114YPDXV6T1G

 

 
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