2SA1225 Datasheet and Replacement
   Type Designator: 2SA1225
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1
 W
   Maximum Collector-Base Voltage |Vcb|: 180
 V
   Maximum Collector-Emitter Voltage |Vce|: 160
 V
   Maximum Emitter-Base Voltage |Veb|: 5
 V
   Maximum Collector Current |Ic max|: 1.5
 A
   Max. Operating Junction Temperature (Tj): 135
 °C
   Transition Frequency (ft): 100
 MHz
   Collector Capacitance (Cc): 30
 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
		   Package: 
TO202
				
				  
				 
   - 
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2SA1225 Datasheet (PDF)
 ..1.  Size:136K  toshiba
 2sa1225.pdf 
						 
2SA1225  TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications  High transition frequency: fT = 100 MHz (typ.)  Complementary to 2SC2983 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -160 VCollector-emitter voltage VCEO -160 VEmitter-
 ..2.  Size:1433K  jiangsu
 2sa1225.pdf 
						 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors2SA1225 TRANSISTOR (PNP)TO-252-2L FEATURES 1. BASE High Transition Frequency Complementary to 2SC29832. COLLECTOR 3 .EMITTER APPLICATIONS    Power Amplifier Applications Driver Stage Amplifier Applications       Equivalent Circuit A1225=Device code  A1225Solid dot=Gre
 ..3.  Size:184K  inchange semiconductor
 2sa1225.pdf 
						 
isc Silicon PNP Power Transistor 2SA1225DESCRIPTIONHigh transition frequency100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC2983APPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
 8.1.  Size:85K  nec
 2sa1221 2sa1222.pdf 
						 
DATA SHEETSILICON TRANSISTORS2SA1221, 1222PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSFEATURES PACKAGE DRAWING (UNIT: mm) Ideal for use of high withstanding voltage current such as TVvertical deflection output, audio output, and variable powersupplies. Complementary transistor with 2SC2958 and 2SC2959VCEO = 140 V: 2SA1221/2SC2958VCEO = 160 V: 2S
 8.5.  Size:160K  jmnic
 2sa1227 2sa1227a.pdf 
						 
JMnic Product Specification Silicon PNP Power Transistors 2SA1227 2SA1227A DESCRIPTION With TO-3PFa package Complement to type 2SC2987/2987A High power dissipation APPLICATIONS For use in audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT
 8.6.  Size:189K  jmnic
 2sa1220 2sa1220a.pdf 
						 
JMnic Product Specification Silicon PNP Power Transistors 2SA1220 2SA1220A DESCRIPTION With TO-126 package Complement to type 2SC2690/2690A APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITION
 8.7.  Size:916K  kexin
 2sa1226.pdf 
						 
SMD Type TransistorsPNP Transistors2SA1226SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features  Collector Current Capability IC=-30mA1 2  Collector Emitter Voltage VCEO=-40V+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Col
 8.8.  Size:114K  inchange semiconductor
 2sa1227 2sa1227a.pdf 
						 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1227 2SA1227A DESCRIPTION With TO-3PFa package Complement to type 2SC2987/2987A High power dissipation APPLICATIONS For use in audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDI
 8.9.  Size:134K  inchange semiconductor
 2sa1220 a.pdf 
						 
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1220/A DESCRIPTION Good Linearity of hFEHigh Collector-Emitter Breakdown Voltage-  : V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A Complement to Type 2SC2690/A APPLICATIONS Adudio frequency power amplifier High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25) 
 8.10.  Size:222K  inchange semiconductor
 2sa1227.pdf 
						 
isc Silicon PNP Power Transistor 2SA1227DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2987Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
 8.11.  Size:224K  inchange semiconductor
 2sa1227a.pdf 
						 
isc Silicon PNP Power Transistor 2SA1227ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2987AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE 
 8.12.  Size:214K  inchange semiconductor
 2sa1220 2sa1220a.pdf 
						 
isc Silicon PNP Power Transistors 2SA1220/ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-: V = -120V(Min)-2SA1220(BR)CEO= -160V(Min)-2SA1220AComplement to Type 2SC2690/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequency power amplifierHigh frequency power amplifierABSOLU
Datasheet: 2SA1219
, 2SA122
, 2SA1220
, 2SA1220A
, 2SA1221
, 2SA1222
, 2SA1223
, 2SA1224
, D882P
, 2SA1226
, 2SA1227
, 2SA1227A
, 2SA1228
, 2SA1229
, 2SA123
, 2SA1230
, 2SA1231
. 
History: 2N4414
 | 105NU70
Keywords - 2SA1225 transistor datasheet
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