All Transistors. NST846BMX2 Datasheet

 

NST846BMX2 Datasheet and Replacement


   Type Designator: NST846BMX2
   SMD Transistor Code: AD
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.165 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: X2DFN3
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NST846BMX2 Datasheet (PDF)

 ..1. Size:153K  onsemi
 nst846bmx2 nst847amx2 nst847bmx2.pdf pdf_icon

NST846BMX2

DATA SHEETwww.onsemi.comCOLLECTORGeneral Purpose3Transistors1BASENPN Silicon2NST846BMX2,EMITTERNST847AMX2,NST847BMX2 3Features1 Moisture Sensitivity Level: 12 ESD Rating - Human Body Model: > 4000 VX2DFN3 (1.0x0.6)ESD Rating - Machine Model: > 350 VCASE 714AC These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RA

 7.1. Size:109K  onsemi
 nst846bf3-d.pdf pdf_icon

NST846BMX2

NST846BF3T5GNPN General PurposeTransistorThe NST846BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-1123http://onsemi.comsurface mount package. This device is ideal for low-power surfacemount applications where board space is at a premium.COLLECTORFeatures

 7.2. Size:158K  onsemi
 nst846bf3t5g.pdf pdf_icon

NST846BMX2

NST846BF3T5GNPN General PurposeTransistorThe NST846BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-1123www.onsemi.comsurface mount package. This device is ideal for low-power surfacemount applications where board space is at a premium.COLLECTORFeatures 3

 9.1. Size:101K  onsemi
 nst847bpdp6.pdf pdf_icon

NST846BMX2

NST847BPDP6T5GDual ComplementaryGeneral Purpose TransistorThe NST847BPDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inhttp://onsemi.comone package, this device is ideal for low-power surface

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA286 | MRF5812 | DC5422 | NSBC123EPDXV6 | KSC1623Y | MCH3245 | 2SB118

Keywords - NST846BMX2 transistor datasheet

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