All Transistors. NSVF4020SG4 Datasheet

 

NSVF4020SG4 Datasheet and Replacement


   Type Designator: NSVF4020SG4
   SMD Transistor Code: GT
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 8 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 13000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: MCPH4
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NSVF4020SG4 Datasheet (PDF)

 ..1. Size:684K  onsemi
 nsvf4020sg4.pdf pdf_icon

NSVF4020SG4

NSVF4020SG4 RF Transistor for Low Noise Amplifier This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it www.onsemi.com has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 8 V, 150 mA Features fT = 16 GHz t

 8.1. Size:838K  onsemi
 nsvf4017sg4.pdf pdf_icon

NSVF4020SG4

NSVF4017SG4RF Transistor for Low NoiseAmplifier12 V, 100 mA, fT = 10 GHz typ.This RF transistor is designed for low noise amplifier applications.www.onsemi.comMCPH package is suitable for use under high temperatureenvironment because it has superior heat radiation characteristics.This RF transistor is AEC-Q101 qualified and PPAP capable forautomotive applications.Features 1

 8.2. Size:718K  onsemi
 nsvf4009sg4.pdf pdf_icon

NSVF4020SG4

NSVF4009SG4 RF Transistor for Low Noise Amplifier This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it www.onsemi.com has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 3.5 V, 40 mA Features fT = 25 GHz

 8.3. Size:216K  onsemi
 nsvf4015sg4.pdf pdf_icon

NSVF4020SG4

NSVF4015SG4RF Transistor for Low NoiseAmplifier12 V, 100 mA, fT = 10 GHz typ.This RF transistor is designed for low noise amplifier applications.www.onsemi.comMCPH package is suitable for use under high temperatureenvironment because it has superior heat radiation characteristics.This RF transistor is AEC-Q101 qualified and PPAP capable for12 V, 100 mAautomotive applications

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Keywords - NSVF4020SG4 transistor datasheet

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