NSVS50030SB3 Datasheet, Equivalent, Cross Reference Search
Type Designator: NSVS50030SB3
SMD Transistor Code: HAE*
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 360(typ) MHz
Collector Capacitance (Cc): 24 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: CPH3
NSVS50030SB3 Transistor Equivalent Substitute - Cross-Reference Search
NSVS50030SB3 Datasheet (PDF)
nsvs50030sb3 nsvs50031sb3.pdf
NSVS50030SB3,NSVS50031SB3Bipolar Transistor (-)50 V,(-)3 A, Low VCE(sat),(PNP)NPN Singlewww.onsemi.comThis device is bipolar junction transistor featuring high current, lowsaturation voltage, and high speed switching.ELECTRICAL CONNECTIONSuitable for motor driver, relay driver, DC-DC converter ofautomotive applications. AEC-Q101qualified and PPAP capable.3 3Features1 1
nsvs50030sb3, nsvs50031sb3.pdf
NSVS50030SB3,NSVS50031SB3Bipolar Transistor (-)50 V,(-)3 A, Low VCE(sat),(PNP)NPN Singlewww.onsemi.comThis device is bipolar junction transistor featuring high current, lowsaturation voltage, and high speed switching.ELECTRICAL CONNECTIONSuitable for motor driver, relay driver, DC-DC converter ofautomotive applications. AEC-Q101qualified and PPAP capable.3 3Features1 1
Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , A1941 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .
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