NSVUMC2NT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSVUMC2NT1G
SMD Transistor Code: U2*
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT353
NSVUMC2NT1G Transistor Equivalent Substitute - Cross-Reference Search
NSVUMC2NT1G Datasheet (PDF)
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UMC2NT1G,NSVUMC2NT1G,UMC3NT1G,NSVUMC3NT1G,UMC5NT1G,NSVUMC5NT2Ghttp://onsemi.comDual CommonBase-Collector BiasResistor TransistorsSC-88A/SOT-353CASE 419ANPN and PNP Silicon Surface MountSTYLE 6Transistors with Monolithic BiasResistor Network 312R1R2The Bias Resistor Transistor (BRT) contains a single transistor witha monolithic bias network consisting of t
umz1nt1g nsvumz1nt1g.pdf
UMZ1NT1GComplementary DualGeneral PurposeAmplifier TransistorPNP and NPN Surface Mountwww.onsemi.comFeatures High Voltage and High Current: VCEO = 50 V, IC = 200 mA(6) (5) (4) High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3AQ1 Q2ESD Rating - Machine Model: C NSV Prefix for Automotive and Other Applications Requiri
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: ESM10050
