TIP115G Datasheet, Equivalent, Cross Reference Search
Type Designator: TIP115G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO220
TIP115G Transistor Equivalent Substitute - Cross-Reference Search
TIP115G Datasheet (PDF)
tip110 tip110g tip111 tip111g tip112 tip112g tip115 tip115g tip116 tip116g tip117 tip117g.pdf
TIP110, TIP111, TIP112(NPN); TIP115, TIP116,TIP117 (PNP)Plastic Medium-PowerComplementary Siliconwww.onsemi.comTransistorsDARLINGTONDesigned for general-purpose amplifier and low-speed switchingapplications. 2 AMPERECOMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain -hFE = 2500 (Typ) @ IC 60-80-100 VOLTS, 50 WATTS= 1.0 Adc Collector-Emitt
tip110 tip112 tip115 tip117.pdf
TIP110/112TIP115/117COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS 32 LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT TO-220DESCRIPTION The TIP110 and TIP112 are siliconEpitaxial-Base NPN
tip110 tip112 tip115 tip117 .pdf
TIP110/112TIP115/117COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIAL32EQUIPMENT1DESCRIPTIONTO-220The TIP110 and TIP112 are silicon epitaxial-baseNPN transistors in mon
tip115.pdf
PNP EPITAXIALTIP115/116/117 SILICON DARLINGTON TRANSISTORHIGH DC CURRENT GAINTO-220MIN h =1000 @ V = -4V, I = -1AFE CE CLOW COLLECTOR-EMITTERSATURATION VOLTAGEMONOLITHIC CONSTRUCTION WITH BUILTIN BASE-EMITTER SHUNT RESISTORSINDUSTRIAL USEComplementary to TIP110/111/112ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage :TIP115 VCBO -60
tip115 tip116 tip117 to-220.pdf
MCCTIP115Micro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsTIP116CA 91311Phone: (818) 701-4933TIP117Fax: (818) 701-4939Features High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.) Low Collector-Emitter Saturation VoltagePNP Epitaxial Complementary to TIP110/111/112 Lead Free Finish/RoHS Compliant (Note1) ("
tip115.pdf
isc Silicon PNP Darlington Power Transistor TIP115DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -1AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.5V(Max)@ I = -2ACE(sat) CComplement to Type TIP110Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
