All Transistors. PBSS2515MB Datasheet

 

PBSS2515MB Datasheet and Replacement


   Type Designator: PBSS2515MB
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 4.4 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT883B
      - BJT Cross-Reference Search

   

PBSS2515MB Datasheet (PDF)

 ..1. Size:1143K  nxp
pbss2515mb.pdf pdf_icon

PBSS2515MB

PBSS2515MB15 V, 0.5 A NPN low VCEsat (BISS) transistorRev. 1 26 January 2012 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3515MB.1.2 Features and benefits Leadless ultra small SMD plastic High

 5.1. Size:83K  nxp
pbss2515m.pdf pdf_icon

PBSS2515MB

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWPBSS2515M15 V, 0.5 A NPN low VCEsat (BISS) transistorProduct data sheet 2003 Sep 15Supersedes data of 2003 Jun 17NXP Semiconductors Product data sheet15 V, 0.5 A PBSS2515MNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT

 6.1. Size:65K  philips
pbss2515f 1.pdf pdf_icon

PBSS2515MB

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PBSS2515FNPN transistorProduct specification 2000 Oct 25Philips Semiconductors Product specificationNPN transistor PBSS2515FFEATURES PINNING Low VCEsatPIN DESCRIPTION High current capabilities.1 base2 emitterAPPLICATIONS3 collector Heavy duty battery powered equipment (automotive,telecom and audio video) such as

 6.2. Size:142K  philips
pbss2515vs.pdf pdf_icon

PBSS2515MB

DISCRETE SEMICONDUCTORS DATA SHEETM3D744PBSS2515VS15 V low VCE(sat) NPN double transistorProduct data sheet 2004 Dec 23Supersedes data of 2001 Nov 07NXP Semiconductors Product data sheet15 V low VCE(sat) NPN double transistorPBSS2515VSFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6 1.2 mm ultra thin pac

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: ZTX300 | UN621K | CHDTA115TEGP | KRA567U | D11C1053 | BD544D | BD112

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