PHPT61002PYCLH
Datasheet, Equivalent, Cross Reference Search
Type Designator: PHPT61002PYCLH
SMD Transistor Code: 1002PCC
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.25
W
Maximum Collector-Base Voltage |Vcb|: 100
V
Maximum Collector-Emitter Voltage |Vce|: 100
V
Maximum Emitter-Base Voltage |Veb|: 8
V
Maximum Collector Current |Ic max|: 2
A
Max. Operating Junction Temperature (Tj): 175
°C
Transition Frequency (ft): 125
MHz
Collector Capacitance (Cc): 28
pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package:
SOT669
PHPT61002PYCLH
Transistor Equivalent Substitute - Cross-Reference Search
PHPT61002PYCLH
Datasheet (PDF)
..1. Size:255K nxp
phpt61002pyclh.pdf
PHPT61002PYCLH100 V, 2 A PNP high power bipolar transistor13 July 2017 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) powerplastic package.NPN complement: PHPT61002NYCLH.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C
2.1. Size:284K nxp
phpt61002pyc.pdf
PHPT61002PYC100 V, 2 A PNP high power bipolar transistor10 January 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT61002NYC.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C
5.1. Size:243K nxp
phpt61002nyclh.pdf
PHPT61002NYCLH100 V, 2 A NPN high power bipolar transistor31 March 2017 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) powerplastic package.PNP complement: PHPT61002PYCLH2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced P
5.2. Size:283K nxp
phpt61002nyc.pdf
PHPT61002NYC100V, 2 A NPN high power bipolar transistor9 January 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT61002PYC2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print
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