MMBT3904HE3 Datasheet, Equivalent, Cross Reference Search

MMBT3904HE3 Transistor Equivalent Substitute - Cross-Reference Search

MMBT3904HE3 Datasheet (PDF)

..1. mmbt3904he3.pdf Size:563K _mcc

MMBT3904HE3Features Halogen Free. "Green" Device (Note 1) AEC-Q101 Qualified Moisture Sensitivity Level 1 NPN Epoxy Meets UL 94 V-0 Flammability RatingGeneral Purpose Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS AmplifierCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature R

6.1. mmbt3904w mmbt3906wt1 mmbt3904 06.pdf Size:423K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAMMBT3904WT1/DGeneral Purpose TransistorsNPNNPN and PNP SiliconMMBT3904WT1PNPThese transistors are designed for general purpose

6.2. mmbt3904lt1rev1d.pdf Size:164K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT3904LT1/DGeneral Purpose TransistorMMBT3904LT1NPN SiliconCOLLECTOR Motorola Preferred Device31BASE32EMITTER1

 6.3. mmbt3904l.pdf Size:230K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT3904LT1/DGeneral Purpose TransistorMMBT3904LT1NPN SiliconCOLLECTOR Motorola Preferred Device31BASE32EMITTER1

6.4. mmbt3904wt1 mmbt3906wt1.pdf Size:297K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAMMBT3904WT1/DGeneral Purpose TransistorsNPNNPN and PNP SiliconMMBT3904WT1PNPThese transistors are designed for general purpose

 6.5. mmbt3904 1.pdf Size:54K _philips

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088MMBT3904NPN switching transistorProduct specification 2000 Apr 11Philips Semiconductors Product specificationNPN switching transistor MMBT3904FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Telephony and professional communication

6.6. mmbt3904.pdf Size:58K _st

MMBT3904SMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingMMBT3904 34 SILICON EPITAXIAL PLANAR NPNTRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE ISMMBT3906APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTA

6.7. 2n3904 mmbt3904 pzt3904.pdf Size:111K _fairchild_semi

2N3904 MMBT3904 PZT3904CCEECC TO-92BBSOT-23 BESOT-223Mark: 1ANPN General Purpose AmplifierThis device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage

6.8. mmbt3904sl.pdf Size:194K _fairchild_semi

February 2008MMBT3904SLCNPN Epitaxial Silicon TransistorFeatures General purpose amplifier transistor.E Ultra small surface mount package for all types(max 0.43mm tall)B Suitable for general switching & amplification Well suited for portable applicationMarking : AA SOT-923F As complementary type, PNP MMBT3906SL is recommended Pb freeAbsolute Maxim

6.9. mmbt3904t.pdf Size:132K _fairchild_semi

February 2008MMBT3904TNPN Epitaxial Silicon TransistorFeaturesC General purpose amplifier transistor.E Ultra-Small Surface Mount Package for all types.B Suitable for general switching & amplificationMarking : A04 Well suited for portable application SOT-523F As complementary type, PNP MMBT3906T is recommended Absolute Maximum Ratings Ta = 25C unless o

6.10. mmbt3904k.pdf Size:121K _fairchild_semi

MMBT3904KNPN Epitaxial Silicon TransistorGeneral Purpose TransistorMarking31AK2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 200 mAPC Collector Power Dissipation 350 mW

6.11. mmbt3904.pdf Size:350K _nxp

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

6.12. mmbt3904t 2.pdf Size:173K _diodes

MMBT3904T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT3906T) CDim Min Max Typ Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) A 0.15 0.30 0.22TOP VIEW B C "Green" Device (Note 3 and 4) B 0.75 0.85 0.80B EC 1.45 1.75 1.60Mechanical Data

6.13. mmbt3904.pdf Size:399K _diodes

MMBT3904 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary PNP Type Available (MMBT3906) Case Material: Molded Plastic, Green Molding Compound. Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant

6.14. mmbt3904lp.pdf Size:396K _diodes

MMBT3904LP 40V NPN SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X1-DFN1006-3 BVCEO > 40V Case Material: Molded Plastic, Green Molding Compound. IC = 200mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 0.60mm2 Package Footprint,

6.15. mmbt3904fz.pdf Size:572K _diodes

MMBT3904FZ 40V NPN SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BVCEO > 40V Case: X2-DFN0606-3 IC = 200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound. PD = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 0.36mm2 Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity: Level

6.16. mmbt3904fa.pdf Size:135K _diodes

MMBT3904FA40V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > 40V Case: X2-DFN0806-3 IC = 200mA high Collector Current Case Material: Molded Plastic, Green Molding Compound. PD = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 0.48mm2 package footprint, 16 times smaller than SOT23 Moisture Sensitivity: Le

6.17. mmbt3904t.pdf Size:261K _diodes

MMBT3904T 60V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 40V Case: SOT523 Case Material: Molded Plastic. Green Molding Compound. IC = 200mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals:

6.18. smbt3904 mmbt3904 smbt3904s smbt3904u.pdf Size:1745K _infineon

6.19. smbt3904series mmbt3904.pdf Size:145K _infineon

SMBT3904...MMBT3904NPN Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S / SMBT3904U: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906... MMBT3906 SMBT3904S / U: For orientation in reel see package information below Pb-free

6.20. smbt3904 mmbt3904 smbt3904s.pdf Size:862K _infineon

SMBT3904...MMBT3904NPN Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906... MMBT3906 SMBT3904S: For orientation in reel see package information below Pb-free (RoHS compliant)

6.21. mmbt3904l3.pdf Size:363K _mcc

MMBT3904L3Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral Purpose Compliant. See Ordering Information)AmplifierMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range:

6.22. mmbt3904.pdf Size:420K _mcc

MMBT3904Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral Purpose Compliant. See Ordering Information)AmplifierMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -5

6.23. mmbt3904t sot-523.pdf Size:216K _mcc

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsMMBT3904TCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features150mW Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Operatingand Storage Junction Temperatures: -55 to 150 Purpose Amplifier Epoxy meets

6.24. mmbt3904 sot-23.pdf Size:332K _mcc

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMBT3904Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Capable of 350mWatts of Power Dissipation and 200mA Ic.NPN General Operating and Storage Junction Temperatures: -55 to 150 Surface Mount SOT-23 Package Purpose Amplifier Lead Free Finish/RoHS Compl

6.25. mmbt3904t.pdf Size:690K _mcc

MMBT3904TFeatures Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral Purpose Compliant. See Ordering Information)AmplifierMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -

6.26. 2n3904 mmbt3904 pzt3904.pdf Size:474K _onsemi

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

6.27. mmbt3904tt1.pdf Size:102K _onsemi

MMBT3904TT1General Purpose TransistorsNPN SiliconThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-416/SC-75 package which isdesigned for low power surface mount applications.http://onsemi.comFeaturesGENERAL PURPOSE Pb-Free Package is AvailableAMPLIFIER TRANSISTORSSURFACE MOUNTMAXIMUM RATINGS (TA = 25C)COLLECTORRating

6.28. mmbt3904l smmbt3904l.pdf Size:137K _onsemi

MMBT3904L, SMMBT3904LGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSwww.onsemi.comCompliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1BASEMAXIMUM RATINGSRating Symbol Value Unit2Collector-Emitte

6.29. mmbt3904tt1g.pdf Size:135K _onsemi

MMBT3904TT1G,SMMBT3904TT1GGeneral Purpose TransistorsNPN SiliconThis transistor is designed for general purpose amplifierhttp://onsemi.comapplications. It is housed in the SOT-416/SC-75 package which isdesigned for low power surface mount applications.GENERAL PURPOSEFeaturesAMPLIFIER TRANSISTORS AEC-Q101 Qualified and PPAP CapableSURFACE MOUNT S Prefix for Automo

6.30. mmbt3904wt1g smmbt3904wt1g mmbt3906wt1g smmbt3906wt1g.pdf Size:128K _onsemi

MMBT3904WT1G, NPN,SMMBT3904WT1G, NPN,MMBT3906WT1G, PNP,SMMBT3906WT1G, PNPGeneral Purposewww.onsemi.comTransistorsNPN and PNP SiliconCOLLECTOR3These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-323/SC-70 package which1is designed for low power surface mount applications.BASEFeatures2 S Prefix for Automotive an

6.31. mmbt3904lt1g.pdf Size:131K _onsemi

MMBT3904L, SMMBT3904LGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1BASEMAXIMUM RATINGSRating Symbol Value Unit2Collector-Emi

6.32. mmbt3904tt1g smmbt3904tt1g.pdf Size:92K _onsemi

MMBT3904TT1G,SMMBT3904TT1GGeneral Purpose TransistorsNPN SiliconThis transistor is designed for general purpose amplifierwww.onsemi.comapplications. It is housed in the SOT-416/SC-75 package which isdesigned for low power surface mount applications.GENERAL PURPOSEFeaturesAMPLIFIER TRANSISTORS S Prefix for Automotive and Other Applications Requiring UniqueSURFACE MOUNT

6.33. mmbt3904lt3g.pdf Size:131K _onsemi

MMBT3904L, SMMBT3904LGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1BASEMAXIMUM RATINGSRating Symbol Value Unit2Collector-Emi

6.34. mmbt3904lt1-d.pdf Size:114K _onsemi

MMBT3904LT1GGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1Collector-Emitter Voltage VCEO 40 VdcBASECollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 Vdc 2EMITTERCollector Current - Continuous IC 200 mAdcColl

6.35. mmbt3904wt1g mmbt3906wt1g.pdf Size:1411K _onsemi

MMBT3904WT1, NPN,SMMBT3904WT1, NPN,MMBT3906WT1, PNPGeneral PurposeTransistorshttp://onsemi.comNPN and PNP SiliconCOLLECTORThese transistors are designed for general purpose amplifier3applications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.1BASEFeatures AEC-Q101 Qualified and PPAP Capable2 S Pref

6.36. 2n3904bu 2n3904ta 2n3904tar 2n3904tf 2n3904tfr mmbt3904 pzt3904.pdf Size:478K _onsemi

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

6.37. mmbt3904wt1 mmbt3906wt1.pdf Size:160K _onsemi

MMBT3904WT1, NPNMMBT3906WT1, PNPGeneral PurposeTransistorsNPN and PNP Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierCOLLECTORapplications. They are housed in the SOT-323/SC-70 package which3is designed for low power surface mount applications.Features1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASEComplian

6.38. mmbt3904.pdf Size:157K _utc

UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3906 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT3904G-AE3-R SOT-23 E B C Tape ReelMMBT3904G-AL3-R SOT-323 E B C Tape

6.39. mmbt3904ef.pdf Size:255K _auk

MMBT3904EFNPN Silicon TransistorDescriptions PIN Connection Small signal application Switching application 3 Features Low collector saturation voltage 1 Low collector output capacitance 2 Complementary pair with MMBT3906EF SOT-523F Ordering Information Type NO. Marking Package Code Z MMBT3904EF SOT-523F Device Code

6.40. mmbt3904.pdf Size:1271K _secos

MMBT3904 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION AL General switching and amplification. 33Top View C B 11 22K EPACKAGING DIMENSION

6.41. mmbt3904z.pdf Size:318K _secos

MMBT3904Z 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-923 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION General switching and amplification. (Top View) MARKING Date code 2 PACKAGING DIMENSION Millimet

6.42. mmbt3904w.pdf Size:396K _secos

MMBT3904WNPN SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURESSOT-323(SC-70) Epitaxial Planar Die ConstructionDim Min MaxA Complementary PNP Type AvailableLA 1.800 2.200(MMBT3906W)B 1.150 1.3503 Ideal for Medium Power Amplification andS C 0.800 1.000Top ViewBSwitching

6.43. mmbt3904fw.pdf Size:179K _secos

MMBT3904FWNPN SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductFEATURESSOT-523A Epitaxial Planar Die ConstructionDim Min MaxL Complementary PNP Type AvailableA 1.500 1.700(MMBT3906FW)B 0.750 0.850 Ideal for Medium Power Amplification andSTop ViewBC 0.700 0.900SwitchingD 0.250 0.350COLLECTORV GG 0.900 1.1003 3H 0.0

6.44. mmbt3904t.pdf Size:785K _secos

MMBT3904T NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 FEATURES Simplifies Circuit Design. We Declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking ShippingMMBT3904T MA 3000/Tape&ReelMillimeter Millimete

6.45. mmbt3904zw.pdf Size:61K _secos

MMBT3904ZW 200 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free WBFBP-03E FEATURES Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION General switching and amplification. MARKING Millimeter Millimeter REF. REF. Min. Max. Min. Max.

6.46. mmbt3904.pdf Size:1498K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) SOT23 FEATURES Complementary to MMBT3906 MARKING:1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emit

6.47. mmbt3904t.pdf Size:2416K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT3904T TRANSISTOR (NPN) FEATURES SOT523 Complementary to MMBT3906T Small Package MARKING:1N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 60 V CBO2. EMITTER V Collector-Emitter Voltage 40 V CEO

6.48. mmbt3904m.pdf Size:1379K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors SOT-723 MMBT3904M TRANSISTOR (NPN) FEATURE Complementary to MMBT3906M Small Package MARKING: 1N 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted ) 3. COLLECTORSymbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage

6.49. mmbt3904wgh.pdf Size:116K _zovie

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconLead free productHalogen-free typeCOLLECTOR33BASE11MMBT3904WGH22SOT-323EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcTHERMAL CHARACTERISTICSCh

6.50. mmbt3904gh.pdf Size:125K _zovie

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconHalogen-free typeLead free productCOLLECTOR33BASE112MMBT3904GH2EMITTERSOT-23MAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcTHERMAL CHARACTERISTICSChar

6.51. mmbt3904wg.pdf Size:118K _zovie

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconLead free productCOLLECTOR33BASE11MMBT3904WG22SOT-323EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcTHERMAL CHARACTERISTICSCharacteristic Symbol

6.52. mmbt3904.pdf Size:637K _htsemi

MMBT3904TRANSISTOR(NPN)SOT-23 FEA TURES Complementary Type The PNP Transistor MMBT3906 is Recommended Epitaxial Planar Die Construction (3)C MARKING: 1AM 1AM(1)B (2)E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Curre

6.53. mmbt3904.pdf Size:321K _gsme

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM3904( MMBT3904)MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit

6.54. mmbt3904.pdf Size:215K _lge

MMBT3904 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction MARKING: 1AM MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VDimensions in inches and (millimeters)VCEO Collector-Emitter Vo

6.55. mmbt3904lt1.pdf Size:1617K _lge

MMBT3904LT1 NPN SWITCHING TRANSISTOR1. BASE 2. EMITTER3. COLLECTORFEATURES A Epitaxial planar die construction. SOT-23 E Complementary PNP type available Dim Min MaxA 2.70 3.10K B(MMBT3906). B 1.10 1.50C 1.0 Typical Collector Current Capability ICM =200mA. D 0.4 TypicalJDE 0.35 0.48 Collector-emitter Voltage VCEO=40V. GG 1.80 2.00H 0.02 0.1H

6.56. mmbt3904.pdf Size:205K _wietron

MMBT3904COLLECTOR3General Purpose Transistor3NPN Silicon11BASE22SOT-23EMITTERMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 40 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base VOltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipation FR-5 Board (

6.57. mmbt3904w.pdf Size:373K _wietron

MMBT3904WCOLLECTOR3General Purpose Transistor3NPN Silicon1BASE122EMITTERSOT-323(SC-70)Maximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 40 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base VOltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipation TA=

6.58. mmbt3904t.pdf Size:355K _wietron

MMBT3904TGeneral Purpose NPN SiliconTransistor3COLLECTOR3P b Lead(Pb)-Free121BASESC-892SOT-523FEMITTERMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 40 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcThermal CharacteristicsCharacteristics Symbol Max Unit(1)Total

6.59. mmbt3904e.pdf Size:157K _wietron

MMBT3904ENPN General Purpose Transistor3211The MMBT3904E device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device.SOT-1123It is designed for general purpose amplifier applicationsand is housed in the SOT-1123 surface mount package.COLLECTORThis device is ideal for low-power surface mount applications3where board space is at a premium.FE

6.60. mmbt3904tt1.pdf Size:386K _willas

FM120-M WILLASTHRUMMBT3904TT1General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeaturesNPN ocess de Batch prSiliconsign, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HFEATURE Low profile surface mounted application in

6.61. mmbt3904slt1.pdf Size:525K _willas

FM120-MWILLAS MMBT3904SLT1THRU SOT-923 Plastic-Encapsulate Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outline TRANSISTOR (NPN) Features FEATURES Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HSOT923 Lo

6.62. mmbt3904dw1t1.pdf Size:346K _willas

FM120-M WILLASMMBT3904DW1T1THRUDual General Purpose TransistorFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optim

6.63. mmbt3904lt1.pdf Size:374K _willas

FM120-M WILLASMMBT3904LT1THRUGeneral Purpose TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.RoHS product for packing code suffix "G", SOD-123H Low profile surfa

6.64. mmbt3904lt1.pdf Size:1002K _shenzhen

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT3904LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.2 W (Tamb=25) 1. 3 Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range Unit: mm TJ, Ts

6.65. mmbt3904.pdf Size:260K _can-sheng

SOT-23 Plastic-Encapsulate TransistorsFEATURESSOT-23 As complementary type, the PNP transistorMMBT3906 is Recommended Epitaxial planar die constructionMARKING:1AMMARKING:1AMMARKING:1AMMARKING:1AM1 BASEMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS2 EMITTERSymbol Parameter Value UnitsSymbol Parameter Va

6.66. mmbt3904 sot-23.pdf Size:265K _can-sheng

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) FEATURES Complimentary to MMBT3906 MARKING:1AM MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-

6.67. mmbt3904.pdf Size:819K _blue-rocket-elect

MMBT3904 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low current, Low voltage / Applications General purpose amplifier and switching. / Equivalent Circuit

6.68. mmbt3904ltg.pdf Size:1042K _first_silicon

MMBT3904LTGGeneral Purpose TransistorsFeaturesPackage outline Pb-Free Package May be Available. The G-Suffix Denotes aPb-Free Lead Finish3Maximum Ratings1Rating Symbol Value Unit2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcSOT23Emitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 200 mAdc3COLLECTORThermal Charact

6.69. mmbt3904.pdf Size:1128K _kexin

SMD Type TransistorsNPN TransistorsMMBT3904 (KMBT3904)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features Complementary to MMBT39061 2 Marking:1AM+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60 VCollector - Emitter Voltage VCEO 40 V

6.70. mmbt3904dw.pdf Size:770K _kexin

SMD Type TransistorsNPN TransistorsMMBT3904DW (KMBT3904DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current -

6.71. mmbt3904w.pdf Size:1116K _kexin

SMD Type TransistorsNPN TransistorsMMBT3904W Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=40V Complementary to MMBT3906W1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Colle

6.72. mmbt3904t.pdf Size:953K _kexin

SMD Type TransistorsNPN TransistorsMMBT3904T (KMBT3904T)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features Small Package2 1 Complementary to MMBT3906T30.30.05+0.10.5 -0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collec

6.73. mmbt3904-d.pdf Size:1137K _kexin

SMD Type TransistorsNPN Transistors(KMBT3904-D)MMBT3904-DSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features Complementary to MMBT3906-D1 2 Marking:1AM+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60 VCollector - Emitter Voltage VC

6.74. mmbt3904-hf.pdf Size:103K _comchip

General Purpose TransistorMMBT3904-HF (NPN)RoHS DeviceHalogen FreeSOT-23Features0.118(3.00)0.110(2.80) -Epitaxial planar die construction3 -As complementary type, the PNP0.055(1.40)0.047(1.20)transistor MMBT3904-HF is recommended1 20.006(0.15)0.079(2.00)Collector0.002(0.05)0.071(1.80)30.041(1.05) 0.100(2.55)0.035(0.90) 0.089(2.25)1Base0.004(0.10

6.75. mmbt3904-g.pdf Size:115K _comchip

General Purpose TransistorMMBT3904-G (NPN)RoHS DeviceFeaturesSOT-23 -Epitaxial planar die construction0.120 (3.04)0.110 (2.80) -As complementary type, the PNP3transistor MMBT3904-G is recommended0.055 (1.40)0.047 (1.20)1 20.080 (2.04)0.070 (1.78)Collector0.007 (0.18)3 0.003 (0.08)0.044 (1.11)0.104 (2.64)0.035 (0.89)0.083 (2.10)1Base0.004 (0.100)

6.76. mmbt3904.pdf Size:259K _galaxy

Product specification NPN SWITCHING TRANSISTOR MMBT3904 FEATURES Epitaxial planar die construction. Pb Complementary PNP type available Lead-free (MMBT3906). Collector Current Capability I =200mA. CM Collector-emitter Voltage V =40V. CEO MSL 1 APPLICATIONS SOT-23 General switching and amplification ORDERING INFORMATION Type No. Marking Pac

6.77. gstmmbt3904.pdf Size:910K _globaltech_semi

GSTMMBT3904 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Lead(Pb)-Freeamplifier and switch. Packages & Pin Assignments GSTMMBT3904F(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT3904F SOT-23 1AMOrdering Information GS P/NGSTMMBT3904 FPb Free Co

6.78. mmbt3904.pdf Size:826K _born

MMBT3904NPN Plastic-Encapsulate TransistorFeatures Pin ConfigurationsV CE = 40V3 COLLECTORI C = 0.2A f T =300MHZ @VCE=20V, IC=10mA,f=100MHz 1 BASE2 EMITTERGeneral Description As complementary type the PNP transistorMMBT3906 is recommended Epitaxial planar die constructio SOT-23 Plastic Package.Absolute Maximum Ratings @T =25 unless otherwise noted

6.79. mmbt3904.pdf Size:3130K _fuxinsemi

MMBT3904 TRANSISTOR (NPN)FEATURES Complementary to MMBT3906MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT23Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector Power Dissipation 200 mW RJA Thermal Resistance From Junction To Ambient 625 /WT

6.80. mmbt3904t.pdf Size:523K _fuxinsemi

6.81. mmbt3904.pdf Size:484K _fms

NPN SWITCHING TRANSISTOR Formosa MSMMBT3904 TRANSISTOR (NPN) FEATURES Pb Epitaxial planar die construction. Lead-free Complementary PNP type available (MMBT3906). Collector Current Capability Ic=200mA. Collector-emitter Voltage VCEO=40V. APPLICATIONS General switching and amplification SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT3904 1AM

6.82. mmbt3904.pdf Size:2020K _high_diode

MMBT3904SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )SOT- 23Features Complementary to MMBT3906 Marking: 1AMSymbol Parameter Value Unit VCBO Collector-Base Voltage 60 V V Collector-Emitter Voltage 40 V CEOV Emitter-Base Voltage 6 V CEBOI Collector Current 200 mA CP Collector Power Dissipation 200 mW CRJA Thermal Resistance From Junction

6.83. mmbt3904.pdf Size:1101K _jsmsemi

MMBT3904NPN SWITCHING TRANSISTORFEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT3906). SOT-23 Collector Current Capability ICM =200mA. Collector-emitter Voltage VCEO=40V. MSL 1 APPLICATIONS General switching and amplification ORDERING INFORMATION Type No. Marking Package Code MMBT3904 1AM SOT-23 MAXIMUM RA

6.84. mmbt3904.pdf Size:2179K _mdd

MMBT3904TRANSISTOR(NPN)FEA TURES Complementary Type The PNP Transistor MMBT3906 is Recommended Epitaxial Planar Die Construction MARKING:1AMSOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector

6.85. mmbt3904-ms.pdf Size:4184K _msksemi

www.msksemi.comMMBT3904-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)FEATURES Complementary to MMBT3906-MSMAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE2. EMITTERSOT23 MARKING: 1AM3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Volta

6.86. mmbt3904t-ms.pdf Size:3334K _msksemi

www.msksemi.comMMBT3904T-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)3MMBT3904T-MS1. BASEFEATURES 2. EMITTER1 Complementary to MMBT3906T3. COLLECTOR2 Small PackageSOT-523 MARKING: 1N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOV Collector-Emitter Voltage 40 V

6.87. mmbt3904-t3 mmbt3904g-t3.pdf Size:431K _powersilicon

MMBT3904GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN Silicon Epitaxial Planar Transistor For Switching And Amplifier Applications Collector-emitter Voltage VCE=40V Collector Current IC=200mA MECHANICAL DATA C E Available in SOT-23 Package SolderabilityMIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUM

6.88. mmbt3904.pdf Size:1948K _eicsemi

TH09/2479TH97/2478 IATF 0113686SGS TH07/1033www.eicsemi.comMMBT3904 NPN Silicon General Purpose Transistor for switching and amplifier applications. SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C)Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mAPower Dis

6.89. mmbt3904.pdf Size:1025K _cn_doeshare

MMBT3904 MMBT3904 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT3906 Power Dissipation of 200mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT3904 1AM . Maximum R

6.90. mmbt3904c.pdf Size:849K _cn_doeshare

MMBT3904C MMBT3904C SOT-883 Silicon General Purpose Transistor (NPN) General description SOT-883 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight: approx. 0.001g Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol Parameter Value Units VCBO Collector

6.91. mmbt3904w.pdf Size:1275K _cn_doeshare

MMBT3904W MMBT3904W SOT-323 Silicon General Purpose Transistor (NPN) General description SOT-323 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight: approx. 0.001g Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol Parameter Value Units VCBO Collector

6.92. mmbt3904t.pdf Size:731K _cn_doeshare

MMBT3904T MMBT3904T SOT-523 Silicon General Purpose Transistor (NPN) General description SOT-523 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight: approx. 0.002g Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol Parameter Value Units VCBO Collector

6.93. mmbt3904m.pdf Size:1115K _cn_doeshare

MMBT3904M MMBT3904M NPN General Purpose Transistor General description NPN General Purpose Transistor FEATURES SOT-723 General Purpose Transistors. VCEO 40V Ic 200mA PC 100mW Complementary to MMBT3906M Small Outline Surface Mount Package. RoHS Compliant / Green EMC. Type MMBT3904M Marking 1N Absolute Maximum Ratings(Ta=25) Para

6.94. mmbt3904.pdf Size:1223K _cn_cbi

TRANSISTOR (NPN)FEATURES Complementary Type The PNP Transistor MMBT3906 is Recommended SOT-23 Epitaxial Planar Die Construction 1BASE 2EMITTER 3COLLECTOR MARKING: 1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6

6.95. mmbt3904w.pdf Size:1116K _cn_cbi

MMBT3904W NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Marking Code: 1EOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mA Total Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStor

6.96. mmbt3904t.pdf Size:604K _cn_cbi

SOT-523 Plastic-Encapsulate Transistors MMBT3904T TRANSISTOR (NPN) FEATURES SOT523 Complementary to MMBT3906T Small Package MARKING:1N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 60 V CBO2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR V Emitter-Base Voltage 6 V EBOI Colle

6.97. mmbt3904.pdf Size:1013K _cn_fosan

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT3904MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 40 Vdc-Collector-Base VoltageVCBO 40 Vdc-Emitter-Base VoltageVEBO 6.0 Vdc-Co

6.98. mmbt3904.pdf Size:1848K _cn_goodwork

MMBT3904NPN GENERAL PURPOSE SWITCHING TRANSISTOR40Volts POWER 225mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V.Collector current IC=0.2A.ansition frequency fT>300MHz @ TrIC=10mAdc, VCE=20Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: So

6.99. mmbt3904.pdf Size:656K _cn_hottech

MMBT3904BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBT3906 Surface Mount deviceMECHANICAL DATA SOT-23 Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base Voltage V 60 VCBOCollec

6.100. mmbt3904.pdf Size:815K _cn_idchip

NPN MMBT3904MMBT3904 TRANSISTOR (NPN)FEATURES Complementary Type The PNP Transistor MMBT3906 is Recommended SOT-23 Epitaxial Planar Die Construction 1BASE 2EMITTER 3COLLECTOR MARKING: 1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volta

6.101. mmbt3904.pdf Size:1280K _cn_juxing

MMBT3904SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction MARKING: 1AM SOT-23 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 V 1. BASE VEBO Emitter-Base Vol

6.102. mmbt3904.pdf Size:218K _inchange_semiconductor

isc Silicon NPN Transistor MMBT3904DESCRIPTIONLow Voltage UseUltra Super Mini Mold PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSTelephony and professional communication equipment.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 40 VC

LIST

Last Update

BJT: UMT4401U3 | UMF28N | SST2907AHZG | SST2222AHZG | LSCR523EBFS8 | EMX4 | DTD143ECHZG | DTA115EUB | BC857BHZG | BC847BU3 | BC847BHZG | 2SCR574D3FRA | 2SCR573D3 | 2SCR572D3FRA | 2SCR572D3 | 2SCR554P5 | 2SCR544P5 | 2SCR533P5 | 2SCR513P5 | 2SCR512P5 | 2SCR502U3HZG