5401 Specs and Replacement
Type Designator: 5401
SMD Transistor Code: 2L
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT23
5401 Substitution
- BJT ⓘ Cross-Reference Search
5401 datasheet
5401 MOT PNP-TRANSISTOR PNP PNP High Voltage Transistor SMD 5401 PNP, BEC Complementary to 5401 General Purpose Transistors Transistor Polarity PNP Transistor pinout BEC SOT-23 Package Marking Code 2L hFE 100 200, 200 300 Ldeal for Medium Power Amplification and Switching 5401 In... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5400/D Amplifier Transistors 2N5400 PNP Silicon * 2N5401 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit CASE 29 04, STYLE 1 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 120 150 Vdc Collector Base Voltage VCBO 130 160 Vdc Emitter B... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5401LT1/D High Voltage Transistor MMBT5401LT1 COLLECTOR PNP Silicon 3 Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 150 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 160 Vdc SOT 23 (TO 236AB) Emitter Base Volt... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification 2004 Oct 28 Supersedes data of 1999 Apr 08 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 150 V). 1 collector 2 base APPLICATIONS 3 emitter G... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 PMBT5401 PNP high-voltage transistor Product data sheet 2004 Jan 21 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet PNP high-voltage transistor PMBT5401 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 150 V). 1 base 2 emitter APPLICATIONS 3 collector Switchi... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 PMBT5401 PNP high-voltage transistor 1999 Apr 15 Product specification Supersedes data of 1997 Apr 09 Philips Semiconductors Product specification PNP high-voltage transistor PMBT5401 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 150 V). 1 base 2 emitter APPLICATIONS 3 collector ... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST5401 PNP high-voltage transistor 1999 Apr 29 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification PNP high-voltage transistor PMST5401 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 150 V). 1 base 2 emitter APPLICATIONS 3 collector ... See More ⇒
2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 BVCEO 150 V 1 1 IC (max) 0.5 A 2 2 3 HFE at 10 V - 150 mA > 60 TO-18 LCC-3 3 Hermetic packages 4 ESCC and JANS qualified 1 Up to 100 krad(Si) low dose rate 2 UB Description Pin 4 in UB is connected to the metallic lid. The 2N5401HR is a silicon planar PNP transistor ... See More ⇒
SO5401 SMALL SIGNAL PNP TRANSISTORS Type Marking SO5401 P33 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING 2 CIRCUITS GENERAL PURPOSE AND HIGH VOLTAGE 3 AMPLIFIER 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -160 V V Collector-Emitter Volt... See More ⇒
STZT5401 MEDIUM POWER AMPLIFIER ADVANCE DATA SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED 2 FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER 3 OUTPUT STAGE 2 1 SOT-223 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO ... See More ⇒
FMBM5401 PNP General Purpose Amplifier This device has matched dies in SuperSOT-6. C2 E1 C1 B2 E2 B1 pin #1 SuperSOTTM-6 Mark .4S2 Absolute Maximum Ratings* Symbol Parameter Value Units VCEO Collector-Emitter Voltage -150 V VCBO Collector-Base Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -600 mA TJ, TSTG Operating and Storage Junction... See More ⇒
FMBS5401 NC PNP General Purpose Amplifier C1 This device is designed as a general purpose amplifier and switch for E applications requiring high voltage. B C C pin #1 SuperSOTTM-6 single Mark .4S1 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -150 V VCBO Collector-Bas... See More ⇒
2N5401 MMBT5401 C E C TO-92 B B SOT-23 E Mark 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 150 V VCBO Collector-Base Voltage 160 V VEBO Emitter-Base Voltage 5.0 V I... See More ⇒
KST5401 High Voltage Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation 350 mW TSTG Storage T... See More ⇒
MMBT5401 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for C applications requiring high voltage. E B SOT-23 Mark 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -150 V VCBO Collector-Base Voltage -160 V VEBO Emitter-Bas... See More ⇒
2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 Collector-Emitter Voltage VCEO= 150V Collector Dissipation PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Dissipation PC 625 m... See More ⇒
Si5401DC Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.032 at VGS = - 4.5 V - 7.1 TrenchFET Power MOSFET 0.040 at VGS = - 2.5 V - 6.4 16.5 - 20 Ultra-Low On-Resistance 0.053 at VGS = - 1.8 V - 5.5 Thermally Enhanced ChipFET Package 40 % ... See More ⇒
CMPT5401 www.centralsemi.com SURFACE MOUNT DESCRIPTION PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE C2L SOT-23 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage VC... See More ⇒
CMUT5401 www.centralsemi.com SURFACE MOUNT DESCRIPTION PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMUT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE 54C SOT-523 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage V... See More ⇒
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
CXT5401E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CXT5401E is a PNP Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING FULL PART NUMBER FEATURES High Collector Breakdown Voltage 250V SOT-89 CASE Low L... See More ⇒
CMUT5401E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMUT5401E is a PNP Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging. MARKING CODE 4C5 FEATURES SOT-523 CASE High Collector Bre... See More ⇒
CMPT5401E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5401E is an PNP Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging. MARKING CODE C540 FEATURES High Collector Breakdown Voltag... See More ⇒
CZT5401E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZT5401E is a PNP Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING FULL PART NUMBER FEATURES High Collector Breakdown Voltage 250V SOT-223 CASE SOT-223 ... See More ⇒
ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC(cont) = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features B 150V rating SOT223 package E Applications E High voltage amplification C C Ordering information Device Reel size Tape width Quantit... See More ⇒
ZXTP5401Z 150V, SOT89, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC(cont) = -600mA PD = 1.2W Complementary part number ZXTN5551Z Description C A high voltage PNP transistor in a small outline surface mount package. Features B 150V rating SOT89 package E Applications High voltage amplification E Ordering information C C Device Reel size Tap... See More ⇒
DMMT5401 150V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data BVCEO > -150V Case SOT26 (SC74R) Case Material Molded Plastic. Green Molding Compound. 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) UL Flammability Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity Level 1 per J-STD... See More ⇒
DZT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -150V Case SOT223 IC = -600mA high Collector Current Case Material Molded Plastic. Green Molding Compound. Ideal for Medium Power Switching or Amplification Applications UL Flammability Rating 94V-0 Complementary PNP Type DZT5551 Moisture Sensitivity Level 1 pe... See More ⇒
MMDT5401 150V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case SOT363 Complementary NPN Type Available (MMDT5551) Case Material Molded Plastic, Green Molding Compound, Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Ultra-Small Surface Mount Packag... See More ⇒
MMBT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary NPN Type - MMBT5551 Case Material Molded Plastic, Green Molding Compound Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes... See More ⇒
SOT SI I O A A T 00 HI H O TA T A SISTO S T 0 ISS O 6 T I D T I T T T T T T T T A SO T A I ATI S T T T IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T T T I I IT DITI II V V I V I II i V V I V I i V V I V I II I V V V V T V V V V T i I V V T 8 I V V ... See More ⇒
A Product Line of Diodes Incorporated ZXTP5401FL 150V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits Mechanical Data BVCEO > -150V Case SOT23 Maximum Continuous Collector Current IC = -600mA UL Flammability Rating 94V-0 Excellent hFE Characteristics up to IC = -50mA Case material molded Plastic. Low Saturation Voltages ... See More ⇒
DXT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT89 Features Mechanical Data Case SOT89 BVCEO > -150V Case Material Molded Plastic. Green Molding Compound. IC = -600mA high Collector Current Ideal for Medium Power Switching or Amplification Applications UL Flammability Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 Complementary NPN ... See More ⇒
SPICE MODEL MMST5401 MMST5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 Complementary NPN Type Available (MMST5551) A Dim Min Max Ideal for Medium Power Amplification and Switching C A 0.25 0.40 Ultra-Small Surface Mount Package B 1.15 1.35 B C Available in Lead Free/RoHS Compliant Version (Note 2) C 2.00 2.20 B E D 0... See More ⇒
2N5401 MCC TM Micro Commercial Components ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage(1) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) 150 Collector Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 mAdc, IE = 0) 160 Emitter Base Breakdown Voltage V(BR)EBO 5.0 Vdc (IE ... See More ⇒
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMDT5401 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Marking K4M Plastic-Encapsulate Ideal for Low Power Amplification and Switching Ultra-small Surface M... See More ⇒
MCC Micro Commercial Components TM MMBT5401 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features PNP Plastic Collector Current ICM=0.6A Encapsulate Collector-Base Voltage V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OC Transistor Capable of 0.3Watts of Power Dissipation ... See More ⇒
MCC Micro Commercial Components TM MMBT5401 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features PNP Plastic Halogen free available upon request by adding suffix "-HF" Collector Current ICM=0.6A Encapsulate Collector-Base Voltage V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OC... See More ⇒
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth MMST5401 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Power dissipation 200mW (Tamb=25 ) PNP Small Signal Collector current -0.2A Marking K4M Transistors Operating and Storage junction temperature range -55 to + 150 Lead Free Finish/RoHS ... See More ⇒
MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon http //onsemi.com Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 (TO-236) Compliant CASE 318 STYLE 6 MAXIMUM RATINGS COLLECTO... See More ⇒
2N5401 Amplifier Transistors PNP Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector - Emitter Voltage VCEO 150 Vdc Collector - Base Voltage VCBO 160 Vdc 1 Emitter - Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25 C PD 625 mW Der... See More ⇒
MMBT5401W High Voltage Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector-Emitter Vo... See More ⇒
2N5401 Amplifier Transistors PNP Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector - Emitter Voltage VCEO 150 Vdc Collector - Base Voltage VCBO 160 Vdc 1 Emitter - Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25 C PD 625 mW Der... See More ⇒
MMBT5401M3 High Voltage Transistor PNP Silicon The MMBT5401M3 device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-723 surface mount package. www.onsemi.com This device is ideal for low-power surface mount applications where board space is at a premium. Features SOT-723 NSV Prefix for Au... See More ⇒
MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 (TO-236) CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS STYLE 6 Compliant* COLLECTOR MAXIMUM RAT... See More ⇒
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MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon www.onsemi.com Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 (TO-236) Compliant CASE 318 STYLE 6 MAXIMUM RATINGS COLLECTOR ... See More ⇒
MMBT5401W High Voltage Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector-Emitter Vo... See More ⇒
2N5401 Amplifier Transistors PNP Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector - Emitter Voltage VCEO 150 Vdc Collector - Base Voltage VCBO 160 Vdc 1 Emitter - Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25 C PD 625 mW Der... See More ⇒
MMBT5401W High Voltage Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector-Emitter Vo... See More ⇒
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MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 (TO-236) CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS STYLE 6 Compliant COLLECTOR MAXIMUM RATI... See More ⇒
MMBT5401LT1G High Voltage Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO -150 Vdc BASE Collector-Base Voltage VCBO -160 Vdc 2 Emitter-Base Voltage VEBO -5.0 Vdc EMITTER Collector Current - Continuous IC -500 mAdc S... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage VCEO = -150V * High current gain, ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2N5401G-x-AB3-R SOT-89 B C E Tape Reel 2N5401L-x-T92-B 2N5401G-x-T92-B TO-92 E B C Tape Box 2N5401... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD. PZT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage VCEO=-150V * High current gain APPLICATIONS * Telephone Switching Circuit * Amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 PZT5401L-x-AA3-R PZT5401G-x-AA... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage VCEO=-150V *High Current Gain ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT5401G-x-AE3-R SOT-23 E B C Tape Reel Note Pin Assignment E Emitter B Base C Collector MARKING www.unisonic.com.t... See More ⇒
2N5401 PNP Silicon Transistor Description PIN Connection General purpose amplifier E High voltage application Features B High collector breakdown voltage VCBO = -160V, VCEO = -160V Low collector saturation voltage C VCE(sat)=-0.5V(MAX.) TO-92 Complementary pair with 2N5551 Ordering Information Type NO. Marking Package Code 2N5401 TO-9... See More ⇒
2N5401N Semiconductor Semiconductor PNP Silicon Transistor Description General purpose amplifier High voltage application Features High collector breakdown voltage VCBO = -160V, VCEO = -160V Low collector saturation voltage VCE(sat)=-0.5V(MAX.) Complementary pair with 2N5551N Ordering Information Type NO. Marking Package Code 2N5401N 2N5401 T... See More ⇒
SBT5401 PNP Silicon Transistor Description PIN Connection General purpose amplifier High voltage application Features C High collector breakdown voltage B VCBO = -160V, VCEO = -160V Low collector saturation voltage E VCE(sat)=-0.5V(MAX.) SOT-23 Complementary pair with SBT5551 Ordering Information Type NO. Marking Package Code NFN ... See More ⇒
SBT5401F PNP Silicon Transistor Description PIN Connection General purpose amplifier High voltage application 3 Features High collector breakdown voltage 1 VCBO = -160V, VCEO = -160V Low collector saturation voltage 2 VCE(sat)=-0.5V(MAX.) SOT-23F Complementary pair with SBT5551F Ordering Information Type NO. Marking Package Code NFN ... See More ⇒
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2N5401CSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 150V A = (0.04 0.00... See More ⇒
2N5401DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 150V CEO 6.22 0.13 A = 1.27 0.13 I = 0.6A C (0.... See More ⇒
2N5401 -0.6 A, -160 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Switching and amplification in high voltage Applications such as telephony J Low current (max. 600mA) A D Millimeter REF. Min. Max. B High voltage (max. 160V) A 4.40 4.70 B 4.30 ... See More ⇒
MMDT5401 Plastic-Encapsulate Elektronische Bauelemente Multi-Chip (PNP+PNP) Transistor RoHS Compliant Product SOT-363 o .055(1.40) 8 .047(1.20) 0o .026TYP Features (0.65TYP) .021REF (0.525)REF * Epitaxial Planar Die Construction .053(1.35) * Complementary NPN Type Available (MMDT5551) .096(2.45) .045(1.15) .085(2.15) .018(0.46) .010(0.26) C2 B1 E1 .014(0.35) .006(0.15... See More ⇒
CZT5401 PNP Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The CZT5401 is designed for general purpose applications requiring high breakdown voltages. REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. 5 4 0 1 D 0.02 0.10 1 6.30 6.70 Date Code E 0 10 2 6.30 6.70 I 0.60 0.80 3 3.3... See More ⇒
MMBT5401W PNP Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE A L Ideal for Medium Power Amplification and Switching 3 3 Also Available in Lead Free Version Top View C B Complementary to MMBT5551W 1 1 2 2 K E Collector 3 D H J F G MARKING K4M 1 ... See More ⇒
MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES A L Ideal for medium power amplification and switching 3 3 Top View C B 1 1 2 MARKING 2 K E 2L D H J F G ABSOLUTE MAXIMUM RATINGS Millimeter Millimeter REF. REF. Min. Max. Min. Max. Parameter Symb... See More ⇒
BCP5401 PNP Epitaxial Elektronische Bauelemente Planar Transistor RoHS Compliant Product SOT-89 Features Designed for gereral prupose application requiring high breakdown voltage. 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER REF. REF. Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. Marking 01 C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 XXXX E 2.40 2.60... See More ⇒
Preliminary TSC5401 Very High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 700V 3. Base BVCBO 1500V IC 1A VCE(SAT) 1.0V @ IC / IB = 0.5A / 0.1A Features Block Diagram Very High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part N... See More ⇒
sd5000n sd5001n sd5002n sd5400cy sd5401cy sd5402cy.pdf
High-Speed DMOS Quad FET Analog Switch Arrays LLC SD5000 / SD5001 / SD5002 SD5400 / SD5401 / SD5402 FEATURES DESCRIPTION Low PropagatiomTime . . . . . . . . . . . . . . . . . . . . 600 psec The SD5000 Series are monolithic arrays of four bidirectional, Low On Resistance high performance analog switches manufactured with Low Insertion Loss implanted high-speed, high... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401 TO-92 CBE C B E High Voltage PNP Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 150 V Collector ... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P N P HIGH VOLTAGE TRANSISTOR P N P transistor Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector base voltage (open emitter) VCBO max. 160 V Collector emitter volt... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 (9AW) TO-92 BCE MARKING CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 150 V Collector -Base Voltage VCBO 160 ... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2N5401 TRANSISTOR (PNP) 1. EMITTER FEATURES 2. BASE Switching and Amplification in High Voltage 3. COLLECTOR Applications such as Telephony Low Current High Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volta... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR (PNP+PNP) SOT-363 FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching MRKING K4M MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors CXT5401 TRANSISTOR (PNP) SOT-89-3L FEATURE 1. BASE Switching and amplification in high voltage 1 1 Applications such as telephony Low current(max. 500mA) 2 2 2. COLLECTOR High voltage(max.160v) 3 3. EMITTER 5401 MAXIMUM RATINGS (Ta=25 unless otherwi... See More ⇒
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 CZT5401 TRANSISTOR (PNP) FEATURES 1. BASE High Voltage High Voltage Amplifier Application 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -160 V CBO V Collector-Emitter Voltage -150 V CEO V... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) SOT 23 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1. BASE MARKING 2L 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -... See More ⇒
www.jscj-elec.com AD-MMBT5401 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBT5401 series Plastic-Encapsulated Transistor AD-MMBT5401 series Transistor (PNP) FEATURES Complementary to AD-MMBT5551 series For medium power amplification and switching AEC-Q101 qualified MARKING 2L = Device code 2L Version 1.0 1 / 6 2021-07-01 www.jscj-elec... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors MMST5401 TRANSISTOR (PNP) SOT 323 FEATURES Complementary to MMST5551 Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter ... See More ⇒
SEMICONDUCTOR 2N5401 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS VCBO=-160V, VCEO=-150V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D ICBO=-50nA(Max.) @VCB=-120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 VCE(sat)=-... See More ⇒
SEMICONDUCTOR 2N5401C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS VCBO=-160V, VCEO=-150V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D ICBO=-50nA(Max.) @VCB=-120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 VCE(sat)=-0.5V(... See More ⇒
SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS _ FEATURES A 2.93 0.20 + B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 3 D 0.40+0.15/-0.05 VCBO=-160V, VCEO=-150V E 2.40+0.30/-0.20 1 Low Leakage Current. G 1.90 H 0.95 ICBO=-50nA(Max.) @VCB=-120V J 0.... See More ⇒
Zowie Technology Corporation High Voltage Transistor Lead free product Halogen-free type FEATURE We declare that the material of product compliance with RoHS requirements. MMBT5401GH 3 1 2 SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V 150 Vdc CEO 3 COLLECTOR Collector Base Voltage V CBO 160 Vdc Emitter Base Voltage V EBO 5.0 ... See More ⇒
CXT5401 TRANSISTOR (PNP) SOT-89 FEATURE Switching and amplification in high voltage 1. BASE Applications such as telephony 1 1 Low current(max. 500mA) High voltage(max.160v) 2 2 2. COLLECTOR 3 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V ... See More ⇒
MMBT5401 TRANSISTOR(PNP) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current ... See More ⇒
MMST5401 TRANSISTOR(PNP) SOT 323 FEATURES Complementary to MMST5551 Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage -160 V CBO V Collector-Emitter Voltage -150 V CEO V Emitter... See More ⇒
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM5401 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -150 Vdc - ... See More ⇒
2N5401(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160v) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage -160 V ... See More ⇒
MMDT5401 Dual Transistor (NPN/PNP) SOT-363 Features Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching MRKING K4M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector- Base Voltage -160 V VCEO Collector-Emitter Vol... See More ⇒
MMBT5401 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING 2L Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emit... See More ⇒
2N5401 PNP Transistors TO-92 1 1. EMITTER 2 3 2. BASE 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N5401 Unit Collector-Emitter Voltage V CEO -150 Vdc Collector-Base Voltage VCBO -160 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current IC 600 mAdc Total Device Dissipation T =25 C PD W 0.625 A Junction Temperature T 150 j C Storage, Temperature Tstg... See More ⇒
PZT5401 PNP Epitaxial Planar Transistor COLLECTOR 2, 4 SOT-223 P b Lead(Pb)-Free 4 1. BASE BASE 2.COLLECTOR 1 1 3.EMITTER 2 4.COLLECTOR 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit VCBO -160 V Collector to Base Voltage VCEO V -150 Collector to Emitter Voltage V Collector to Base Voltage VEBO -5 IC(DC) -600 A Collector Current 1.5 Total Dev... See More ⇒
MMBT5401 High Voltage PNP Transistors COLLECTOR 3 3 1 1 BASE 2 2 SOT-23 EMITTER WEITRON http //www.weitron.com.tw MMBT5401 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain - 50 (IC=-1.0mAdc, VCE=-5.0Vdc) hFE - 60 240 (IC=-10mAdc, VCE=-5.0Vdc) 50 - (IC=-50mAdc, VCE=-5.0Vdc)... See More ⇒
FM120-M WILLAS MMBT5401LT1 THRU High Voltage Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURE Low profile surface mounted application in order to o... See More ⇒
Spec. No. HE6819 HI-SINCERITY Issued Date 1993.06.30 Revised Date 2004.09.07 MICROELECTRONICS CORP. Page No. 1/4 HMBT5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT5401 is designed for general purpose applications requiring high breakdown voltages. SOT-23 Features High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA) Complements to NPN Type HMBT555... See More ⇒
Spec. No. HE9503 HI-SINCERITY Issued Date 1996.04.09 Revised Date 2004.12.21 MICROELECTRONICS CORP. Page No. 1/5 HM5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The HM5401 is designed for general purpose applications requiring high breakdown voltages. SOT-89 Features High current-emitter breakdown voltage.VCEO=150V(@IC=1mA) Complements to NPN type HM5551 Absolu... See More ⇒
Spec. No. HE6203 HI-SINCERITY Issued Date 1992.09.22 Revised Date 2005.01.20 MICROELECTRONICS CORP. Page No. 1/5 H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N5401 is designed for general purpose applications requiring high breakdown voltages. TO-92 Features Complements to NPN Type H2N5551 High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA)) ... See More ⇒
AO5401E P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5401E/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -0.5 A (VGS = -4.5V) operation with gate voltages as low as 1.8V. This RDS(ON) ... See More ⇒
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) TO-92 FEATURE Switching and amplification in high voltage 1.EMITTER Applications such as telephony 2.BASE Low current(max. 600mA) High voltage(max.160v) 3.COLLECTOR 1 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value ... See More ⇒
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5401LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR - Power dissipation 2. 4 PCM 0.3 W (Tamb=25 ) 1. 3 Collector current ICM -0.6 A Collector-base voltage V(BR)CBO -160 V Operating and storage junction temperature range Unit mm ... See More ⇒
Spec. No. C307A3 Issued Date 2003.06.27 CYStech Electronics Corp. Revised Date Page No. 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401A3 Description The BTP5401A3 is designed for general purpose amplification. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -150V Complementary to BTN5551A3. Symbol Outline BTP5401A3 TO-92 B Base ... See More ⇒
TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) TRANSISTOR (PNP) TRANSISTOR (PNP) 2N5401 TRANSISTOR (PNP) FEATURE FEATURE FEATURE FEATURE TO-92 TO-92 TO-92 TO-92 Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage Applications su... See More ⇒
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) FEATURES Complimentary to MMBT5551 MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B... See More ⇒
2N5401 Rev.F Mar-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features , 2N5551 High voltages, complementary pair with 2N5551. / Applications General purpose high voltage amplifier. / Equivalent... See More ⇒
MMBT5401T(BR3CG5401T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features , MMBT5551T(BR3DG5551T) High voltage, complementary Pair with MMBT5551T(BR3DG5551T). / Applications General purpose high voltag... See More ⇒
MMBT5401-HAF PNP Silicon Epitaxial Planar Transistor Features Halogen and Antimony Free(HAF), RoHS compliant 1. Base 2. Emitter 3. Collector TO-236 Plastic Package Applications For high voltage amplifier applications Absolute Maximum Ratings (T = 25 ) a Parameter Symbol Value Unit Collector Base Voltage -V 160 V CBO Collector Emitter Voltage -V 150 V CEO Emitt... See More ⇒
2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors 2N5550 and 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) ... See More ⇒
MMBT5401 PNP Silicon Epitaxial Planar Transistor for high voltage amplifier applications TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 160 V Collector Emitter Voltage -VCEO 150 V Emitter Base Voltage -VEBO 5 V Collector Current Continuous -IC 600 mA Power Dissipation Ptot 350 mW O Junction Temperature Tj 1... See More ⇒
LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE We declare that the material of product compliance with RoHS requirements. LMBT5401LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and S-LMBT5401LT1G Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 3 LMBT5401LT1G... See More ⇒
lmbt5401dw1t1g lmbt5401dw1t3g.pdf
LESHAN RADIO COMPANY, LTD. DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5401DW1T1G FEATURE S-LMBT5401DW1T1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 6 5 DEVICE MARKING AND ORDERING INFORMATION 4 De... See More ⇒
LESHAN RADIO COMPANY, LTD. DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5401DW1T1G FEATURE S-LMBT5401DW1T1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 6 5 DEVICE MARKING AND ORDERING INFORMATION 4 De... See More ⇒
LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE We declare that the material of product compliance with RoHS requirements. LMBT5401LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and S-LMBT5401LT1G Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 3 LMBT5401LT1G... See More ⇒
P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5401 AMPLIFIER TRANSISTOR Collector-Emitter Voltage Vceo=150V. Collector Dissipation Pc(max)=625mW ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 ... See More ⇒
SMD Type Transistors Product specification KXT5401 (CXT5401) SOT-89 Unit mm +0.1 4.50+0.1 1.50-0.1 -0.1 1.80+0.1 -0.1 Features High current (max. 500mA). Low voltage (max. 150 V). +0.1 +0.1 0.48-0.1 0.53+0.1 0.44-0.1 -0.1 1. Base 3.00+0.1 -0.1 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -160 V Collect... See More ⇒
SMD Type Transistors SMD Type Transistors SMD Type Transistor SMD Type T Product specification KMBT5401(MMBT5401) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features High Voltage Transistors Pb-Free Packages are Available 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-b... See More ⇒
SEMICONDUCTOR 2N5401 TECHNICAL DATA 2N5401 TRANSISTOR (PNP) B C FEATURE Switching and Amplification in High Voltage Applications such as Telephony DIM MILLIMETERS Low Current(Max. 600mA) A 4.70 MAX E B 4.80 MAX G High Voltage(Max.160v) C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATINGS (Ta=25 unless otherwise noted) H J 14.00 0.50 + L 2... See More ⇒
FMBT5401LG High Voltage Transistors Features Package outline Pb-Free package is available. 3 Device Marking And Ordering Information Device Marking And Ordering Information Device Package Shipping 1 FMBT5401LG SOT-23 3000/Tape&Reel 2 SOT 23 Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage VCEO -150 Vdc 3 COLLECTOR Collector-Base Voltage VCBO -160 Vdc E... See More ⇒
SEMICONDUCTOR 2N5401S TECHNICAL DATA High Voltage Transistor FEATURE 3 We declare that the material of product compliance with RoHS requirements. 2 1 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping SOT 23 2N5401S 2L 3000/Tape&Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V 150 Vdc CEO 3 COLLECTOR Collector Base Voltage V CB... See More ⇒
SMD Type Transistors PNP Transistors DMMT5401 (KMMT5401) ( ) SOT-23-6 Unit mm +0.1 0.4 -0.1 Features 5 4 6 Epitaxial Planar Die Construction Complementary NPN Type Available (DMMT5551) Ideal for Medium Power Amplification and Switching Intrinsically Matched PNP Pair (Note 1) 2 3 1 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) +0.02 0.15 -0.02 +0.0... See More ⇒
SMD Type Transistors PNP Transistors MMDT5401 (KMDT5401) Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Dual Transistors (PNP+PNP) Complementary NPN Type Available(MMDT 5551) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -... See More ⇒
SMD Type Transistors PNP Transistors CXT5401 (KXT5401) Features 1.70 0.1 Switching and amplification in high voltage Applications such as telephony Low current(max. 500mA) High voltage(max.160v) 0.42 0.1 0.46 0.1 Comlementary to CXT5551 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base V... See More ⇒
SMD Type Transistors PNP Transistors CZT5401 (KZT5401) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 High Voltage High Voltage Amplifier Application 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Coll... See More ⇒
SMD Type Transistors SMD Type PNP Transistors MMBT5401 (KMBT5401) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High Voltage Transistors Pb-Free Packages are Available 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter volta... See More ⇒
SMD Type Transistors PNP Transistors KMBT5401(MMBT5401) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features High Voltage Transistors Pb-Free Packages are Available 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -150 ... See More ⇒
SMD Type Transistors PNP Transistors MMST5401 (KMST5401) Features Small Surface Mount Package Ideal for Medium Power Amplificationand Switching Complementary to MMST5551 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -150 V Emitter - Base Vol... See More ⇒
MMBT5401 HIGH VOLTAGE TRANSISTOR PNP Silicon FEATURES Lead free in compliance with EU RoHS 2.0 0.120(3.04) Green molding compound as per IEC 61249 standard 0.110(2.80) MECHANICAL DATA 0.056(1.40) 0.047(1.20) Case SOT-23 plastic case. Terminals Solderable per MIL-STD-750,Method 2026 0.079(2.00) 0.008(0.20) 0.070(1.80) 0.003(0.08) Standard packaging 8mm ta... See More ⇒
CHENMKO ENTERPRISE CO.,LTD CHT5401SGP SURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-88/SOT-363 FEATURE * Small surface mounting type. (SC-88/SOT-363) * Suitable for high packing density. (1) (6) CONSTRUCTION 0.65 1.2 1.4 2.0 2.2 0.65 * Two PNP transi... See More ⇒
CHENMKO ENTERPRISE CO.,LTD CHT5401WGP SURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-70/SOT-323 FEATURE * Small surface mounting type. (SC-70/SOT-323) * Suitable for high packing density. 0.65 CONSTRUCTION 1.3 0.1 2.0 0.2 0.65 * PNP transistors in on... See More ⇒
CHENMKO ENTERPRISE CO.,LTD CHT5401ZGP SURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. 1.65+0.15 6.50+0.20 0.90+0.05 2.0+0.3 3.00+0.10 CONSTRUCTION *PNP SIL... See More ⇒
CHENMKO ENTERPRISE CO.,LTD CHT5401GP SURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 FEATURE * Small flat package. ( SOT-23 ) * Suitable for high packing density. (1) CONSTRUCTION (3) * PNP transistors in one package. (2) MARKING ( ) ( ) .055 1.4... See More ⇒
CHENMKO ENTERPRISE CO.,LTD CHT5401XGP SURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-62/SOT-89 FEATURE * Suitable for high packing density. 4.6MAX. 1.6MAX. 1.7MAX. 0.4+0.05 CONSTRUCTION *PNP SILICON Transistor +0.08 0.45-0.05 +0.08 +0.08 0.40-0.05 0.... See More ⇒
P-Channel CICLON NexFET Power MOSFETs CSD25401Q3 Product Summary Features Ultra Low Qg & Qgd VDS -20 V Qg 8.8 nC Low Thermal Resistance D 1 8 S 1 8 G S Qgd 2.1 nC D S D 2 7 S 2 7 Low Rdson S D VGS = -2.5V 13.5 m S D 3 6 S 3 6 D RDS(on) S VGS = -4.5V 8.7 m Pb Free Terminal Plating D G 4 5 G 4 5 S Vth -0.85 V RoHS Compliant ... See More ⇒
General Purpose Transistor MMBT5401-G (PNP) RoHS Device SOT-23 Features -Epitaxial planar die construction. 0.119(3.00) 0.110(2.80) -Complementary NPN type available (MMBT5551-G). 3 -Ideal for medium power amplification and switching. 0.056(1.40) 0.047(1.20) 1 2 Diagram 0.006(0.15) 0.079(2.00) Collector 0.002(0.05) 0.071(1.80) 3 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.0... See More ⇒
DC COMPONENTS CO., LTD. DMBT5401 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose applications requiring high breakdown voltage. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .... See More ⇒
GSTMMBT5401 High Voltage PNP Transistors Product Description Features This device is designed as a general purpose Collector-Emitter Voltage -150V amplifier and switch. Collector-Base Voltage -160V Collector Current-Continuous -500mA Lead(Pb)-Free Packages & Pin Assignments GSTMMBT5401F(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information... See More ⇒
KBT5401C PNP Silicon Transistor 2018.03 02 2018.03 02 2018.03 02 2018.03 02 1 000 2018.03.02 AUK Dalian 1 KBT5401C PNP Silicon Transistor Descriptions General purpose ampli... See More ⇒
2N5401(3CG5401) PNP /SILICON PNP TRANSISTOR /Purpose General purpose high voltage amplifier , 2N5551(3DG5551) /Features High voltages, complementary pair.With 2N5551(3DG5551) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -180 V CB... See More ⇒
PT23T5401 Transistor Feature 3 - Collector 1 - Base PNP epitaxial planar silicon transistor 2 - Emitter Mechanical Characteristics Lead finish 100% matte Sn(Tin) Mounting position Any Qualified max reflow temperature 260 Device meets MSL 1 requirements Pure tin plating 7 17 um Pin flatness 3mil Absolute maximum rating@25 P... See More ⇒
SENSITRON SHD225401 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 972, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES 60 Volt, 0.04 Ohm, 20A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Equivalent to IRFM044 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE V... See More ⇒
2N5401 TO-92 Plastic-Encapsulate Transistors FEATURES TO 92 Switching and Amplification in High Voltage Applications such as Telephony 1. EMITTER Low Current High Voltage 2. BASE PNP Transistors 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEB... See More ⇒
MMBT5401 FEATURES FEATURES FEATURES FEATURES PNP High Voltage Transistor MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage V -150 Vdc CEO Collector-Base Voltage V -160 Vdc CBO Emitter-Base Voltage V -6.0 Vdc EBO Collector Current Continuous Ic -500 mAdc THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS... See More ⇒
R UMW UMW MMBT5401 SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) SOT 23 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1. BASE MARKING 2L 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Vo... See More ⇒
MMBT5401 Features SOT-23 (TO-236) For Switching and Amplifier Applications. Silicon Epitaxial Chip 1 Base 2. Emitter 3. Collector oC, Absolute Maximum Ratings (T =25 unless otherwise A noted) Parameter Symbol Value Unit -V 160 V Collector Base Voltage CBO Collector Emitter Voltage -V 150 V CEO -V 6V Emitter Base Voltage EBO Collector Current -I 600 mA C P 350 mW Pow... See More ⇒
MMBT5401 Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS SOT-23 Features Complementary to MMBT5551 Epitaxial planar die construction Power Dissipation of 300mW 1. BASE MARKING 2L 2. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCB... See More ⇒
MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching MARKING 2L 3 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1 Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -160 V 2. EMITTER VCEO Collector-Emitter Voltage -150 V 3. COLLECTOR VEBO Emitter-Base Voltage -5 V IC Collect... See More ⇒
SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 1. BASE Ideal for medium power amplification and switching 2. EMITTER 3. COLLECTOR - MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -15... See More ⇒
MMBT5401 HD-ST0.42 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching Marking 2L Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V V Collector-Emitter Voltage -150 V CEO C V Emitter-Base Voltage -5 V EBO I Collector Current -600 mA C ... See More ⇒
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tmpt5086 tmpt5087 tmpt5401 tmpta55 tmpta56 tmpta63 tmpta64 tmpta70 tmpta92 tmpta93 tmpth81.pdf
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2N5401 2N5401 TRANSISTOR (PNP) B C FEATURE Switching and Amplification in High Voltage Applications such as Telephony DIM MILLIMETERS Low Current(Max. 600mA) A 4.70 MAX E B 4.80 MAX G High Voltage(Max.160v) C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATINGS (Ta=25 unless otherwise noted) H J 14.00 0.50 + L 2.30 F F M 0.51 MAX Symbol Pa... See More ⇒
MMBT5401 PNP General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary NPN type available (MMBT5551). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT V collector-base voltage -160 V CBO V ... See More ⇒
MMBT5401 TRANSISTOR(PNP) FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching SOT-23 Plastic Package MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.6 A PC Collector Pow... See More ⇒
www.msksemi.com MMBT5401-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES Complementary to MMBT5551-MS Ideal for Medium Power Amplification and Switching 1. BASE MARKING 2L 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emit... See More ⇒
MMBT5401 GENERAL PURPOSE TRANSISTORS PNP Silicon FEATURES High DC Current Gain Low Collector-Emitter Saturation Voltage C MECHANICAL DATA E Available in SOT-23Package Solderability MIL-STD-202, Method 208 PB Free Products Are Available 98.5% SN B Above Can Meet RoHS Environment Substance Directive Request ORDERING INFORMATION PART NUMBER PA... See More ⇒
MMBT5401 PNP Transistor Features For High Voltage Amplifer Applications. Silicon Epitaxial Chip. SOT-23 (TO-236) 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings (T = 25 ) A Parameter Symbol Value Unit Collector Base Voltage -VCBO 160 V Collector Emitter Voltage -VCEO 150 V Emitter Base Voltage -VEBO 5 V Collector Current -I 600 mA C Power Dissipation P... See More ⇒
Jingdao Microelectronics co.LTD MMBT5401 MMBT5401 SOT-23 PNP TRANSISTOR 3 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO -160 V 2.EMITTER 3.COLLECTOR Collec... See More ⇒
SXT5401 High Voltage Transistors SOT-89 DESCRIPTION & FEATURES High Collector Breakdown Voltage (VCBO=-160V, VCEO=-150V) (ICBO=-50nA(Max.), @VCB=-120V) Low Leakage Current VCE(sat)=-0.5V(Max.), @IC=-50mA, IB=-5mA Low Saturation Voltage Low Noise NF=8bB(Max.) PIN ASSIGNMENT PIN NUMBER PIN NAME FUNCTION SOT-89 B 1 BASE C 2 COLLECTOR E 3 EMITTER DEVICE MA... See More ⇒
MMBT5401DW Descriptions Double silicon PNP transistor in a SOT-363 Plastic Package. Features High voltage, complementary Pair with MMBT5551DW. Applications General purpose high voltage amplifier. Equivalent Circuit Pinning PIN 1 4 Emitter PIN 2 5 Base PIN 3 6 Collector hFE Classifications & Marking See Marking Instructions. REV.08 1 of 6 MMB... See More ⇒
Integrated in OVP&OCP products provider MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emit... See More ⇒
mmbt5401 mmbt5401-l mmbt5401-h.pdf
MMBT5401 SOT-23 PNP Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector High Voltage Transistors Pb-Free Packages are Available Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V Collector current-continuous IC -0.6 A Collector P... See More ⇒
MMBT5401 MMBT5401 TRANSISTOR (PNP) FEATURES Complimentary to MMBT5551 MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -160 V VCEO Collector-Emitter Voltage - -150 V VEBO Emitter-Base Vo... See More ⇒
MMBT5401 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT5551 ; Complementary to MMBT5551 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Pack... See More ⇒
MMBT3904 MMBT5401 AO3400 SI2305 MMBT5401 TRANSISTOR (PNP) FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching SOT-23 1 BASE 2 EMITTER MARKING 2L 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Vo... See More ⇒
WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW ... See More ⇒
RoHS COMPLIANT MMDT5401 Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking K4M Equivalent circuit 1 / 5 S-S3208 Yangzhou... See More ⇒
RoHS RoHS COMPLIANT COMPLIANT MMBT5401Q PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data SOT-23 Case Terminals Tin plated leads, solderable per J-... See More ⇒
RoHS COMPLIANT MMBT5401 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking 2L Maximum Rantings (Ta=25 ) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=-1.0mAdc, IB=0 -160 Collector-Base Voltage VCBO V IC=-100uAdc, IE=0 -180 Emitter-Base Voltage VEBO V IE=-10uAdc, IC... See More ⇒
RoHS COMPLIANT MMST5401 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 Marking K4M Maximum Rantings (Ta=25 ) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=-1.0mAdc, IB=0 -150 Collector-Base Voltage VCBO ... See More ⇒
MMBT5401 MMBT5401 SOT-23 Plastic-Encapsulate Transistors(PNP) General description SOT-23 Plastic-Encapsulate Transistors(PNP) FEATURES Complementary to MMBT5551 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT5401 2L . Maximum Ra... See More ⇒
Plastic-Encapsulate Transistors SOT-363 DUAL TRANSISTOR (PNP+PNP) FEATURES Complementary to MMDT5551DW Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING 2L MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -160 V CBO V Collector-Emitter Voltage -150 V CEO V Emitter-Base Vo... See More ⇒
SOT-523 Plastic-Encapsulate Transistors TRANSISTOR ( PNP) MMBT5401T SOT 523 FEATURES Complementary to MMBT5551W Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (T =25 unless otherwise noted) a 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emi... See More ⇒
MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Curren... See More ⇒
Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURE Switching and amplification in high voltage Applications such as telephony Low current(max. 500mA) High voltage(max.160v) MARKING 5401 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Volta... See More ⇒
FHT5401-ME PNP Transistor DESCRIPTIONS SOT-23 PNP PNP transistor in a SOT-23 Plastic Package. APPLICATIONS General purpose application,switching. PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Additiona... See More ⇒
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT5401 FEATURES PNP High Voltage Transistor MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage V -150 Vdc CEO - Collector-Base Voltage V -160 Vdc CBO - Emitte... See More ⇒
MMBT5401 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE -150Volts POWER 300mWatts FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-150V. Collector current IC=-0.6A. ansition frequency fT>100MHz @ IC=- Tr 20mAdc, VCE=-6Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminal... See More ⇒
MMBT5401 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symb... See More ⇒
PNP MMBT5401 MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter V... See More ⇒
HMBT5401 PNP-TRANSISTOR -500mA,-150V PNP PNP High Voltage Transistor SMD HMBT5401 HMBT5401LT1 Complementary to HMBT5551 PNP, BEC Transistor Polarity PNP General Purpose Transistors Transistor pinout BEC SOT-23 Package MMBT5401 Marking Code ... See More ⇒
Detailed specifications: MMBT3906HE3, MMBT3906L3, MMS8050, MMS8550, MMS9014, MMS9015, RF3356, 2222A, 2SD313, 5551, MOT13003C, MOT13003D, 2SA1015-MS, 2SB772-MS, 2SC1623-MS, 2SC1815-MS, 2SD882-MS
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