Биполярный транзистор 5401 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 5401
Маркировка: 2L
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SOT23
5401 Datasheet (PDF)
5401.pdf
5401MOTPNP-TRANSISTOR PNP PNP High Voltage Transistor SMD 5401PNP, BEC Complementary to 5401General Purpose Transistors Transistor Polarity: PNP Transistor pinout: BEC SOT-23 Package Marking Code: 2L hFE: 100~200, 200~300 Ldeal for Medium Power Amplification and Switching 5401In
2n5400 2n5401.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5400/DAmplifier Transistors2N5400PNP Silicon*2N5401*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSRating Symbol 2N5400 2N5401 UnitCASE 2904, STYLE 1TO92 (TO226AA)CollectorEmitter Voltage VCEO 120 150 VdcCollectorBase Voltage VCBO 130 160 VdcEmitterB
mmbt5401.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT5401LT1/DHigh Voltage TransistorMMBT5401LT1COLLECTORPNP Silicon3Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 150 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 160 VdcSOT23 (TO236AB)EmitterBase Volt
2n5401.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5401PNP high-voltage transistorProduct specification 2004 Oct 28Supersedes data of 1999 Apr 08Philips Semiconductors Product specificationPNP high-voltage transistor 2N5401FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 150 V).1 collector2 baseAPPLICATIONS3 emitter G
pmbt5401.pdf
DISCRETE SEMICONDUCTORS DATA SHEETok, halfpageM3D088PMBT5401PNP high-voltage transistorProduct data sheet 2004 Jan 21Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetPNP high-voltage transistor PMBT5401FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 150 V).1 base2 emitterAPPLICATIONS3 collector Switchi
pmbt5401 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088PMBT5401PNP high-voltage transistor1999 Apr 15Product specificationSupersedes data of 1997 Apr 09Philips Semiconductors Product specificationPNP high-voltage transistor PMBT5401FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 150 V).1 base2 emitterAPPLICATIONS3 collector
2n5401 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5401PNP high-voltage transistor1999 Apr 08Product specificationSupersedes data of 1997 May 22Philips Semiconductors Product specificationPNP high-voltage transistor 2N5401FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 150 V).1 collector2 baseAPPLICATIONS3 emitter
pmst5401 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D187PMST5401PNP high-voltage transistor1999 Apr 29Product specificationSupersedes data of 1997 Jun 20Philips Semiconductors Product specificationPNP high-voltage transistor PMST5401FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 150 V).1 base2 emitterAPPLICATIONS3 collector
2n5401hr.pdf
2N5401HRHi-Rel PNP bipolar transistor 150 V, 0.5 ADatasheet - production dataFeatures 3BVCEO 150 V11IC (max) 0.5 A223HFE at 10 V - 150 mA > 60 TO-18 LCC-33 Hermetic packages4 ESCC and JANS qualified1 Up to 100 krad(Si) low dose rate2UBDescriptionPin 4 in UB is connected to the metallic lid.The 2N5401HR is a silicon planar PNP transistor
so5401.pdf
SO5401SMALL SIGNAL PNP TRANSISTORSType MarkingSO5401 P33 SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTING2CIRCUITS GENERAL PURPOSE AND HIGH VOLTAGE3AMPLIFIER 1SOT-23INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base Voltage (IE = 0) -160 VV Collector-Emitter Volt
stzt5401.pdf
STZT5401MEDIUM POWER AMPLIFIERADVANCE DATA SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTINGCIRCUITS GENERAL PURPOSE MAINLY INTENDED2FOR USE IN MEDIUM POWER INDUSTRIALAPPLICATION AND FOR AUDIO AMPLIFIER3OUTPUT STAGE21SOT-223INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO
fmbm5401.pdf
FMBM5401 PNP General Purpose Amplifier This device has matched dies in SuperSOT-6.C2E1C1B2E2B1pin #1SuperSOTTM-6Mark: .4S2Absolute Maximum Ratings*Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage -150 VVCBO Collector-Base Voltage -160 VVEBO Emitter-Base Voltage -5.0 VIC Collector Current - Continuous -600 mATJ, TSTG Operating and Storage Junction
fmbs5401.pdf
FMBS5401NCPNP General Purpose AmplifierC1 This device is designed as a general purpose amplifier and switch for Eapplications requiring high voltage.BCCpin #1SuperSOTTM-6 singleMark: .4S1PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage -150 VVCBO Collector-Bas
2n5401 mmbt5401.pdf
2N5401 MMBT5401CEC TO-92BB SOT-23EMark: 2LPNP General Purpose AmplifierThis device is designed as a general purpose amplifier and switchfor applications requiring high voltages.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 150 VVCBO Collector-Base Voltage 160 VVEBO Emitter-Base Voltage 5.0 VI
kst5401.pdf
KST5401High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 VVCEO Collector-Emitter Voltage -150 VVEBO Emitter-Base Voltage -5 VIC Collector Current -500 mAPC Collector Power Dissipation 350 mWTSTG Storage T
mmbt5401.pdf
MMBT5401PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for Capplications requiring high voltage.EBSOT-23Mark: 2LPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage -150 VVCBO Collector-Base Voltage -160 VVEBO Emitter-Bas
2n5401.pdf
2N5401 PNP EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 150V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -160 VCollector-Emitter Voltage VCEO -150 VEmitter-Base Voltage VEBO -5 VCollector Current IC -600 mACollector Dissipation PC 625 m
si5401dc.pdf
Si5401DCVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.032 at VGS = - 4.5 V - 7.1 TrenchFET Power MOSFET0.040 at VGS = - 2.5 V - 6.4 16.5- 20 Ultra-Low On-Resistance0.053 at VGS = - 1.8 V - 5.5 Thermally Enhanced ChipFET Package 40 %
cmpt5401.pdf
CMPT5401www.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.MARKING CODE: C2LSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage VC
cmut5401.pdf
CMUT5401www.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.MARKING CODE: 54CSOT-523 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage V
2n5400 2n5401.pdf
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cxt5401e.pdf
CXT5401Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CXT5401E is a PNP Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage.MARKING: FULL PART NUMBERFEATURES: High Collector Breakdown Voltage: 250VSOT-89 CASE Low L
cmut5401e.pdf
CMUT5401Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT5401E is a PNP Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging.MARKING CODE: 4C5FEATURES:SOT-523 CASE High Collector Bre
cmpt5401e.pdf
CMPT5401Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5401E is an PNP Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging.MARKING CODE: C540FEATURES: High Collector Breakdown Voltag
czt5401e.pdf
CZT5401Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CZT5401E is a PNP Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage.MARKING: FULL PART NUMBERFEATURES: High Collector Breakdown Voltage 250VSOT-223 CASESOT-223
zxtp5401g.pdf
ZXTP5401G150V, SOT223, PNP High voltage transistorSummary BVCEO > -150VBVEBO > -5VIC(cont) = -600mA PD = 2WComplementary part number ZXTN5551GDescriptionCA high voltage PNP transistor in a surface mount packageFeaturesB 150V rating SOT223 packageEApplicationsE High voltage amplificationCCOrdering informationDevice Reel size Tape width Quantit
zxtp5401z.pdf
ZXTP5401Z150V, SOT89, PNP High voltage transistorSummary BVCEO > -150VBVEBO > -5VIC(cont) = -600mA PD = 1.2WComplementary part number ZXTN5551ZDescriptionCA high voltage PNP transistor in a small outline surface mount package.FeaturesB 150V rating SOT89 packageEApplications High voltage amplificationEOrdering informationCCDevice Reel size Tap
dmmt5401.pdf
DMMT5401 150V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data BVCEO > -150V Case: SOT26 (SC74R) Case Material: Molded Plastic. Green Molding Compound. 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) UL Flammability Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD
dzt5401.pdf
DZT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -150V Case: SOT223 IC = -600mA high Collector Current Case Material: Molded Plastic. Green Molding Compound. Ideal for Medium Power Switching or Amplification Applications UL Flammability Rating 94V-0 Complementary PNP Type: DZT5551 Moisture Sensitivity: Level 1 pe
mmdt5401.pdf
MMDT5401 150V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Complementary NPN Type Available (MMDT5551) Case Material: Molded Plastic, Green Molding Compound, Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Ultra-Small Surface Mount Packag
mmbt5401.pdf
MMBT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary NPN Type - MMBT5551 Case Material: Molded Plastic, Green Molding Compound Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes
fmmt5400 fmmt5401.pdf
SOT SI I O A A T 00HI H O TA T A SISTO S T 0 ISS O 6 T I D T I T T T T T T T T A SO T A I ATI S T T T IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T T T I I IT DITI II V V I V I II i V V I V I i V V I V I II I V V V V T V V V V T i I V V T 8 I V V
zxtp5401fl.pdf
A Product Line ofDiodes IncorporatedZXTP5401FL 150V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits Mechanical Data BVCEO > -150V Case: SOT23 Maximum Continuous Collector Current IC = -600mA UL Flammability Rating 94V-0 Excellent hFE Characteristics up to IC = -50mA Case material: molded Plastic. Low Saturation Voltages
dxt5401.pdf
DXT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT89 Features Mechanical Data Case: SOT89 BVCEO > -150V Case Material: Molded Plastic. Green Molding Compound. IC = -600mA high Collector Current Ideal for Medium Power Switching or Amplification Applications UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Complementary NPN
mmst5401.pdf
SPICE MODEL: MMST5401MMST5401PNP SMALL SIGNAL SURFACE MOUNT TRANSISTORFeatures Epitaxial Planar Die ConstructionSOT-323 Complementary NPN Type Available (MMST5551)ADim Min Max Ideal for Medium Power Amplification and SwitchingC A0.25 0.40 Ultra-Small Surface Mount PackageB1.15 1.35B C Available in Lead Free/RoHS Compliant Version (Note 2)C2.00 2.20B ED0
2n5401.pdf
2N5401MCCTMMicro Commercial ComponentsELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)Characteristic Symbol Min Max UnitOFF CHARACTERISTICSCollectorEmitter Breakdown Voltage(1) V(BR)CEO Vdc(IC = 1.0 mAdc, IB = 0) 150 CollectorBase Breakdown Voltage V(BR)CBO Vdc(IC = 100 mAdc, IE = 0) 160 EmitterBase Breakdown Voltage V(BR)EBO 5.0 Vdc(IE
mmdt5401 sot-363.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT5401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Marking:K4MPlastic-Encapsulate Ideal for Low Power Amplification and Switching Ultra-small Surface M
mmbt5401 2.pdf
MCCMicro Commercial ComponentsTMMMBT540120736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Plastic Collector Current: ICM=0.6AEncapsulate Collector-Base Voltage: V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OCTransistor Capable of 0.3Watts of Power Dissipation
mmbt5401.pdf
MCCMicro Commercial ComponentsTMMMBT540120736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Plastic Halogen free available upon request by adding suffix "-HF" Collector Current: ICM=0.6AEncapsulate Collector-Base Voltage: V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OC
mmst5401.pdf
MCCTMMicro Commercial Components20736 Marilla Street ChatsworthMMST5401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Power dissipation: 200mW (Tamb=25 )PNP Small Signal Collector current: -0.2A Marking : K4M Transistors Operating and Storage junction temperature range -55 to + 150 Lead Free Finish/RoHS
nsvmmbt5401lt3g.pdf
MMBT5401L, SMMBT5401L,NSVMMBT5401LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)CompliantCASE 318STYLE 6MAXIMUM RATINGSCOLLECTO
2n5401rlrag.pdf
2N5401Amplifier TransistorsPNP SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2BASECollector - Emitter Voltage VCEO 150 VdcCollector - Base Voltage VCBO 160 Vdc1Emitter - Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 600 mAdcTotal Device Dissipation @ TA = 25C PD 625 mWDer
nsvmmbt5401wt1g.pdf
MMBT5401WHigh Voltage TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector-Emitter Vo
2n5401g.pdf
2N5401Amplifier TransistorsPNP SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2BASECollector - Emitter Voltage VCEO 150 VdcCollector - Base Voltage VCBO 160 Vdc1Emitter - Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 600 mAdcTotal Device Dissipation @ TA = 25C PD 625 mWDer
mmbt5401m3.pdf
MMBT5401M3High Voltage TransistorPNP SiliconThe MMBT5401M3 device is a spin-off of our popular SOT-23three-leaded device. It is designed for general purpose amplifierapplications and is housed in the SOT-723 surface mount package.www.onsemi.comThis device is ideal for low-power surface mount applications whereboard space is at a premium.FeaturesSOT-723 NSV Prefix for Au
mmbt5401lt1g.pdf
MMBT5401LT1G,SMMBT5401LT1G,MMBT5401LT3GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236)CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 6Compliant*COLLECTORMAXIMUM RAT
mmbt5401l smmbt5401l nsvmmbt5401l.pdf
MMBT5401L, SMMBT5401L,NSVMMBT5401LHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)CompliantCASE 318STYLE 6MAXIMUM RATINGSCOLLECTOR
mmbt5401wt1g.pdf
MMBT5401WHigh Voltage TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector-Emitter Vo
2n5401-d.pdf
2N5401Amplifier TransistorsPNP SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2BASECollector - Emitter Voltage VCEO 150 VdcCollector - Base Voltage VCBO 160 Vdc1Emitter - Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 600 mAdcTotal Device Dissipation @ TA = 25C PD 625 mWDer
mmbt5401w.pdf
MMBT5401WHigh Voltage TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector-Emitter Vo
mmbt5401lt1g smmbt5401lt1g mmbt5401lt3g.pdf
MMBT5401LT1G,SMMBT5401LT1G,MMBT5401LT3GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236)CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 6CompliantCOLLECTORMAXIMUM RATI
mmbt5401lt1-d.pdf
MMBT5401LT1GHigh Voltage TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1Collector-Emitter Voltage VCEO -150 VdcBASECollector-Base Voltage VCBO -160 Vdc2Emitter-Base Voltage VEBO -5.0 VdcEMITTERCollector Current - Continuous IC -500 mAdcS
2n5401.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain, ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3- 2N5401G-x-AB3-R SOT-89 B C E Tape Reel2N5401L-x-T92-B 2N5401G-x-T92-B TO-92 E B C Tape Box2N5401
pzt5401.pdf
UNISONIC TECHNOLOGIES CO., LTD. PZT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=-150V * High current gain APPLICATIONS * Telephone Switching Circuit * Amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 PZT5401L-x-AA3-R PZT5401G-x-AA
mmbt5401.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT5401G-x-AE3-R SOT-23 E B C Tape ReelNote: Pin Assignment: E: Emitter B: Base C: Collector MARKING www.unisonic.com.t
2n5401.pdf
2N5401PNP Silicon TransistorDescription PIN Connection General purpose amplifier E High voltage application Features B High collector breakdown voltage : VCBO = -160V, VCEO = -160V Low collector saturation voltage : CVCE(sat)=-0.5V(MAX.) TO-92 Complementary pair with 2N5551 Ordering Information Type NO. Marking Package Code 2N5401 TO-9
2n5401n.pdf
2N5401NSemiconductor Semiconductor PNP Silicon Transistor Description General purpose amplifier High voltage application Features High collector breakdown voltage : VCBO = -160V, VCEO = -160V Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) Complementary pair with 2N5551N Ordering Information Type NO. Marking Package Code 2N5401N 2N5401 T
sbt5401.pdf
SBT5401PNP Silicon TransistorDescription PIN Connection General purpose amplifier High voltage application Features C High collector breakdown voltage : BVCBO = -160V, VCEO = -160V Low collector saturation voltage : EVCE(sat)=-0.5V(MAX.) SOT-23 Complementary pair with SBT5551 Ordering Information Type NO. Marking Package Code NFN
sbt5401f.pdf
SBT5401FPNP Silicon TransistorDescription PIN Connection General purpose amplifier High voltage application 3 Features High collector breakdown voltage : 1 VCBO = -160V, VCEO = -160V Low collector saturation voltage : 2VCE(sat)=-0.5V(MAX.) SOT-23F Complementary pair with SBT5551F Ordering Information Type NO. Marking Package Code NFN
2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf
2n5401csm.pdf
2N5401CSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 150V A =(0.04 0.00
2n5401dcsm.pdf
2N5401DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 150V CEO6.22 0.13 A = 1.27 0.13I = 0.6A C(0.
2n5401.pdf
2N5401 -0.6 A, -160 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Switching and amplification in high voltage Applications such as telephony J Low current (max. 600mA) A DMillimeter REF. Min. Max. B High voltage (max. 160V) A 4.40 4.70 B 4.30
mmdt5401.pdf
MMDT5401Plastic-EncapsulateElektronische BauelementeMulti-Chip (PNP+PNP) TransistorRoHS Compliant ProductSOT-363o.055(1.40)8.047(1.20)0o .026TYPFeatures(0.65TYP) .021REF(0.525)REF* Epitaxial Planar Die Construction.053(1.35)* Complementary NPN Type Available (MMDT5551) .096(2.45).045(1.15).085(2.15).018(0.46).010(0.26)C2 B1 E1.014(0.35).006(0.15
czt5401.pdf
CZT5401PNP Transistor Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-223Description The CZT5401 is designed for general purpose applications requiring high breakdown voltages.REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. 5 4 0 1D 0.02 0.10 1 6.30 6.70 Date CodeE 0 10 2 6.30 6.70 I 0.60 0.80 3 3.3
mmbt5401w.pdf
MMBT5401W PNP Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE AL Ideal for Medium Power Amplification and Switching 33 Also Available in Lead Free Version Top View C B Complementary to MMBT5551W 11 22K ECollector 3 DH JF GMARKING: K4M 1
mmbt5401.pdf
MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES ALIdeal for medium power amplification and switching 33Top View C B11 2MARKING 2K E2L DH JF GABSOLUTE MAXIMUM RATINGS Millimeter MillimeterREF. REF. Min. Max. Min. Max.Parameter Symb
bcp5401.pdf
BCP5401PNP EpitaxialElektronische BauelementePlanar TransistorRoHS Compliant ProductSOT-89 FeaturesDesigned for gereral prupose application requiringhigh breakdown voltage.1231.BASE2.COLLECTOR3.EMITTERREF. REF. Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. Marking: 01C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 XXXXE 2.40 2.60
tsc5401ct.pdf
Preliminary TSC5401 Very High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 700V 3. Base BVCBO 1500V IC 1A VCE(SAT) 1.0V @ IC / IB = 0.5A / 0.1A Features Block Diagram Very High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part N
sd5000n sd5001n sd5002n sd5400cy sd5401cy sd5402cy.pdf
High-Speed DMOS Quad FETAnalog Switch ArraysLLCSD5000 / SD5001 / SD5002SD5400 / SD5401 / SD5402FEATURES DESCRIPTION Low PropagatiomTime . . . . . . . . . . . . . . . . . . . . 600 psec The SD5000 Series are monolithic arrays of four bidirectional, Low On Resistance high performance analog switches manufactured with Low Insertion Loss implanted high-speed, high
2n5401.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401TO-92CBECBEHigh Voltage PNP Transistor For General Purpose And Telephony Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 150 VCollector
cmbt5401.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT5401SILICON PNP HIGHVOLTAGE TRANSISTORPNP transistorMarkingCMBT5401 = 2LPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 160 VCollectoremitter volt
cc5401.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401(9AW)TO-92BCEMARKING : CC5401High Voltage PNP Transistor For General Purpose And Telephony Applications.ABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 150 VCollector -Base Voltage VCBO 160
2n5401.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2N5401 TRANSISTOR (PNP) 1. EMITTER FEATURES 2. BASE Switching and Amplification in High Voltage 3. COLLECTOR Applications such as Telephony Low Current High VoltageMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Volta
mmdt5401.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR (PNP+PNP) SOT-363 FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching MRKING:K4M MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO
cxt5401.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors CXT5401 TRANSISTOR (PNP) SOT-89-3L FEATURE 1. BASE Switching and amplification in high voltage 1 1 Applications such as telephony Low current(max. 500mA) 2 2 2. COLLECTOR High voltage(max.160v) 3 3. EMITTER 5401MAXIMUM RATINGS (Ta=25 unless otherwi
czt5401.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate TransistorsSOT-223 CZT5401 TRANSISTOR (PNP)FEATURES 1. BASE High Voltage High Voltage Amplifier Application2. COLLECTOR3. EMITTERMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -160 V CBOV Collector-Emitter Voltage -150 V CEOV
mmbt5401.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) SOT23 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: 2L 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage -
ad-mmbt5401.pdf
www.jscj-elec.com AD-MMBT5401 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBT5401 series Plastic-Encapsulated Transistor AD-MMBT5401 series Transistor (PNP) FEATURES Complementary to AD-MMBT5551 series For medium power amplification and switching AEC-Q101 qualified MARKING 2L = Device code 2L Version 1.0 1 / 6 2021-07-01 www.jscj-elec
mmst5401.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors MMST5401 TRANSISTOR (PNP) SOT323 FEATURES Complementary to MMST5551 Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING:K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter
2n5401.pdf
SEMICONDUCTOR 2N5401TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=-160V, VCEO=-150VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=-50nA(Max.) @VCB=-120VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=-
2n5401c.pdf
SEMICONDUCTOR 2N5401CTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=-160V, VCEO=-150VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=-50nA(Max.) @VCB=-120VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=-0.5V(
2n5401s.pdf
SEMICONDUCTOR 2N5401STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.EL B LDIM MILLIMETERS_FEATURES A 2.93 0.20+B 1.30+0.20/-0.15High Collector Breakdwon VoltageC 1.30 MAX23 D 0.40+0.15/-0.05: VCBO=-160V, VCEO=-150VE 2.40+0.30/-0.201Low Leakage Current. G 1.90H 0.95: ICBO=-50nA(Max.) @VCB=-120VJ 0.
mmbt5401gh.pdf
Zowie Technology CorporationHigh Voltage TransistorLead free productHalogen-free typeFEATURE We declare that the material of product compliance with RoHS requirements.MMBT5401GH312SOT-23MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage V 150 VdcCEO3COLLECTORCollectorBase Voltage V CBO 160 VdcEmitterBase Voltage V EBO 5.0
cxt5401.pdf
CXT5401TRANSISTOR (PNP) SOT-89 FEATURE Switching and amplification in high voltage 1. BASE Applications such as telephony 1 1 Low current(max. 500mA) High voltage(max.160v) 2 2 2. COLLECTOR 3 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V
mmbt5401.pdf
MMBT5401TRANSISTOR(PNP) SOT-231. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current
mmst5401.pdf
MMST5401TRANSISTOR(PNP)SOT323 FEATURES Complementary to MMST5551 Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING:K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage -160 V CBOV Collector-Emitter Voltage -150 V CEOV Emitter
mmbt5401.pdf
Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM5401MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO -150 Vdc-
2n5401.pdf
2N5401(PNP) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160v) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage -160 V
mmdt5401.pdf
MMDT5401 Dual Transistor (NPN/PNP)SOT-363Features Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching MRKING:K4M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector- Base Voltage -160 V VCEO Collector-Emitter Vol
mmbt5401.pdf
MMBT5401 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING: 2L Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emit
2n5401.pdf
2N5401PNP TransistorsTO-9211. EMITTER 232. BASE3. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol 2N5401UnitCollector-Emitter Voltage VCEO -150 VdcCollector-Base Voltage VCBO -160VdcEmitter-Base VOltage VEBO-5.0 VdcCollector Current IC600 mAdcTotal Device Dissipation T =25 C PD W0.625AJunction Temperature T 150j CStorage, Temperature Tstg
pzt5401.pdf
PZT5401PNP Epitaxial Planar TransistorCOLLECTOR2, 4 SOT-223P b Lead(Pb)-Free 41. BASEBASE2.COLLECTOR113.EMITTER24.COLLECTOR33EM ITTERABSOLUTE MAXIMUM RATINGS (TA=25 C)Rating Symbol Value UnitVCBO -160 VCollector to Base VoltageVCEO V-150Collector to Emitter VoltageVCollector to Base Voltage VEBO -5IC(DC) -600 ACollector Current1.5Total Dev
mmbt5401.pdf
MMBT5401High Voltage PNP TransistorsCOLLECTOR3311BASE22SOT-23EMITTERWEITRONhttp://www.weitron.com.twMMBT5401ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)Characteristics Symbol Min Max UnitON CHARACTERISTICSDC Current Gain-50(IC=-1.0mAdc, VCE=-5.0Vdc)hFE-60 240(IC=-10mAdc, VCE=-5.0Vdc)50-(IC=-50mAdc, VCE=-5.0Vdc)
mmbt5401lt1.pdf
FM120-M WILLASMMBT5401LT1THRUHigh Voltage TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HFEATURE Low profile surface mounted application in order to o
hmbt5401.pdf
Spec. No. : HE6819HI-SINCERITYIssued Date : 1993.06.30Revised Date : 2004.09.07MICROELECTRONICS CORP.Page No. : 1/4HMBT5401PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT5401 is designed for general purpose applications requiring highbreakdown voltages.SOT-23Features High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA) Complements to NPN Type HMBT555
hm5401.pdf
Spec. No. : HE9503HI-SINCERITYIssued Date : 1996.04.09Revised Date : 2004.12.21MICROELECTRONICS CORP.Page No. : 1/5HM5401PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HM5401 is designed for general purpose applications requiring highbreakdown voltages.SOT-89Features High current-emitter breakdown voltage.VCEO=150V(@IC=1mA) Complements to NPN type HM5551Absolu
h2n5401.pdf
Spec. No. : HE6203HI-SINCERITYIssued Date : 1992.09.22Revised Date : 2005.01.20MICROELECTRONICS CORP.Page No. : 1/5H2N5401PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N5401 is designed for general purpose applications requiring highbreakdown voltages.TO-92Features Complements to NPN Type H2N5551 High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))
ao5401e.pdf
AO5401EP-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO5401E/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge andID = -0.5 A (VGS = -4.5V)operation with gate voltages as low as 1.8V. ThisRDS(ON)
2n5401.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) TO-92 FEATURE Switching and amplification in high voltage 1.EMITTER Applications such as telephony 2.BASE Low current(max. 600mA) High voltage(max.160v) 3.COLLECTOR 1 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value
mmbt5401lt1.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5401LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR - Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range Unit: mm
btp5401a3.pdf
Spec. No. : C307A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401A3Description The BTP5401A3 is designed for general purpose amplification. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -150V Complementary to BTN5551A3. Symbol Outline BTP5401A3TO-92 BBase
2n5401.pdf
TO-92 Plastic-Encapsulate TransistorsTRANSISTOR (PNP)TRANSISTOR (PNP)TRANSISTOR (PNP)2N5401 TRANSISTOR (PNP)FEATUREFEATUREFEATUREFEATURETO-92TO-92TO-92TO-92 Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage Applications su
mmbt5401 sot-23.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) FEATURES Complimentary to MMBT5551 MARKING:2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B
2n5401.pdf
2N5401 Rev.F Mar-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features , 2N5551 High voltages, complementary pair with 2N5551. / Applications General purpose high voltage amplifier. / Equivalent
mmbt5401t.pdf
MMBT5401T(BR3CG5401T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features , MMBT5551T(BR3DG5551T)High voltage, complementary Pair with MMBT5551T(BR3DG5551T). / Applications General purpose high voltag
mmbt5401.pdf
MMBT5401 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , MMBT5551 High voltage, complementary Pair with MMBT5551. / Applications General purpose high voltage amplifier.
mmbt5401-haf.pdf
MMBT5401-HAF PNP Silicon Epitaxial Planar Transistor Features Halogen and Antimony Free(HAF), RoHS compliant 1. Base 2. Emitter 3. Collector TO-236 Plastic Package Applications For high voltage amplifier applications Absolute Maximum Ratings (T = 25 ) aParameter Symbol Value Unit Collector Base Voltage -V 160 V CBOCollector Emitter Voltage -V 150 V CEOEmitt
2n5400 2n5401.pdf
2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors 2N5550 and 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C)
mmbt5401.pdf
MMBT5401 PNP Silicon Epitaxial Planar Transistor for high voltage amplifier applications TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 160 VCollector Emitter Voltage -VCEO 150 VEmitter Base Voltage -VEBO 5 VCollector Current Continuous -IC 600 mAPower Dissipation Ptot 350 mWOJunction Temperature Tj 1
lmbt5401lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5401LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and S-LMBT5401LT1GControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Shipping3LMBT5401LT1G
lmbt5401dw1t1g lmbt5401dw1t3g.pdf
LESHAN RADIO COMPANY, LTD.DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5401DW1T1GFEATURES-LMBT5401DW1T1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.65DEVICE MARKING AND ORDERING INFORMATION 4De
lmbt5401dw1t1g.pdf
LESHAN RADIO COMPANY, LTD.DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5401DW1T1GFEATURES-LMBT5401DW1T1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.65DEVICE MARKING AND ORDERING INFORMATION 4De
lmbt5401lt1g lmbt5401lt3g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5401LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and S-LMBT5401LT1GControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Shipping3LMBT5401LT1G
h5401.pdf
P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5401 AMPLIFIER TRANSISTOR Collector-Emitter Voltage:Vceo=150V. Collector Dissipation:Pc(max)=625mW ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150
kxt5401.pdf
SMD Type TransistorsProduct specificationKXT5401 (CXT5401)SOT-89 Unit: mm+0.14.50+0.1 1.50-0.1-0.11.80+0.1-0.1FeaturesHigh current (max. 500mA).Low voltage (max. 150 V).+0.1 +0.10.48-0.1 0.53+0.1 0.44-0.1-0.11. Base3.00+0.1-0.12. Collector3. EmiitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -160 VCollect
kmbt5401.pdf
SMD Type TransistorsSMD Type TransistorsSMD Type TransistorSMD Type TProduct specificationKMBT5401(MMBT5401)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesHigh Voltage TransistorsPb-Free Packages are Available12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-b
2n5401.pdf
SEMICONDUCTOR2N5401TECHNICAL DATA 2N5401 TRANSISTOR (PNP) B C FEATURE Switching and Amplification in High Voltage Applications such as Telephony DIM MILLIMETERS Low Current(Max. 600mA) A 4.70 MAXEB 4.80 MAXG High Voltage(Max.160v) C 3.70 MAXDD 0.55 MAX E 1.00F 1.27G 0.85H 0.45_MAXIMUM RATINGS (Ta=25 unless otherwise noted) HJ 14.00 0.50+L 2
fmbt5401lg.pdf
FMBT5401LGHigh Voltage TransistorsFeaturesPackage outline Pb-Free package is available.3Device Marking And Ordering InformationDevice Marking And Ordering InformationDevice Package Shipping1FMBT5401LG SOT-23 3000/Tape&Reel2SOT23Maximum RatingsRating Symbol Value UnitCollector-Emitter Voltage VCEO -150 Vdc3COLLECTORCollector-Base Voltage VCBO -160 VdcE
2n5401s.pdf
SEMICONDUCTOR2N5401STECHNICAL DATAHigh Voltage TransistorFEATURE3We declare that the material of product compliance with RoHS requirements.21DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Shipping SOT232N5401S 2L 3000/Tape&ReelMAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage V 150 VdcCEO3COLLECTORCollectorBase Voltage V CB
dmmt5401.pdf
SMD Type TransistorsPNP TransistorsDMMT5401 (KMMT5401)( )SOT-23-6 Unit:mm+0.10.4 -0.1 Features5 46 Epitaxial Planar Die Construction Complementary NPN Type Available (DMMT5551) Ideal for Medium Power Amplification and Switching Intrinsically Matched PNP Pair (Note 1)2 31 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)+0.020.15 -0.02+0.0
mmdt5401.pdf
SMD Type TransistorsPNP TransistorsMMDT5401 (KMDT5401) Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Dual Transistors (PNP+PNP) Complementary NPN Type Available(MMDT 5551) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -
cxt5401.pdf
SMD Type TransistorsPNP Transistors CXT5401 (KXT5401) Features1.70 0.1 Switching and amplification in high voltage Applications such as telephony Low current(max. 500mA) High voltage(max.160v)0.42 0.10.46 0.1 Comlementary to CXT55511.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base V
czt5401.pdf
SMD Type TransistorsPNP TransistorsCZT5401 (KZT5401)Unit:mmSOT-2236.500.23.000.1 Features4 High Voltage High Voltage Amplifier Application1 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Coll
mmbt5401.pdf
SMD Type TransistorsSMD TypePNP TransistorsMMBT5401 (KMBT5401)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesHigh Voltage TransistorsPb-Free Packages are Available1 2+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -160 VCollector-emitter volta
kmbt5401.pdf
SMD Type TransistorsPNP TransistorsKMBT5401(MMBT5401)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesHigh Voltage TransistorsPb-Free Packages are Available12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -160 VCollector-emitter voltage VCEO -150
mmst5401.pdf
SMD Type TransistorsPNP TransistorsMMST5401 (KMST5401) Features Small Surface Mount Package Ideal for Medium Power Amplificationand Switching Complementary to MMST55511.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -150 V Emitter - Base Vol
mmbt5401.pdf
MMBT5401HIGH VOLTAGE TRANSISTORPNP SiliconFEATURES Lead free in compliance with EU RoHS 2.00.120(3.04) Green molding compound as per IEC 61249 standard0.110(2.80)MECHANICAL DATA0.056(1.40)0.047(1.20) Case : SOT-23 plastic case. Terminals : Solderable per MIL-STD-750,Method 20260.079(2.00) 0.008(0.20)0.070(1.80) 0.003(0.08) Standard packaging : 8mm ta
cht5401sgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT5401SGPSURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts CURRENT 0.2 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-88/SOT-363FEATURE* Small surface mounting type. (SC-88/SOT-363)* Suitable for high packing density.(1) (6)CONSTRUCTION0.651.2~1.4 2.0~2.20.65* Two PNP transi
cht5401wgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT5401WGPSURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts CURRENT 0.2 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-70/SOT-323FEATURE* Small surface mounting type. (SC-70/SOT-323)* Suitable for high packing density.0.65CONSTRUCTION 1.30.12.00.20.65* PNP transistors in on
cht5401zgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT5401ZGPSURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts CURRENT 0.5 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. ( SC-73/SOT-223 )* Suitable for high packing density.1.65+0.156.50+0.200.90+0.052.0+0.33.00+0.10CONSTRUCTION*PNP SIL
cht5401gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT5401GPSURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts CURRENT 0.2 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SOT-23FEATURE* Small flat package. ( SOT-23 )* Suitable for high packing density.(1)CONSTRUCTION(3)* PNP transistors in one package.(2)MARKING( ) ( ).055 1.4
cht5401xgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT5401XGPSURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts CURRENT 0.5 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-62/SOT-89FEATURE* Suitable for high packing density.4.6MAX. 1.6MAX.1.7MAX. 0.4+0.05CONSTRUCTION*PNP SILICON Transistor+0.080.45-0.05+0.08 +0.080.40-0.05 0.
csd25401q3.pdf
P-Channel CICLON NexFET Power MOSFETs CSD25401Q3 Product Summary Features Ultra Low Qg & Qgd VDS -20 VQg 8.8 nC Low Thermal Resistance D 1 8 S1 8G SQgd 2.1 nCD SD 2 7 S2 7 Low Rdson SD VGS = -2.5V 13.5 m SD 3 6 S3 6 D RDS(on) SVGS = -4.5V 8.7 m Pb Free Terminal Plating DG 4 5G 4 5 SVth -0.85 V RoHS Compliant
mmbt5401-g.pdf
General Purpose TransistorMMBT5401-G (PNP)RoHS DeviceSOT-23Features -Epitaxial planar die construction.0.119(3.00)0.110(2.80) -Complementary NPN type available (MMBT5551-G).3 -Ideal for medium power amplification and switching.0.056(1.40)0.047(1.20)1 2Diagram: 0.006(0.15)0.079(2.00)Collector0.002(0.05)0.071(1.80)30.041(1.05) 0.100(2.55)0.035(0.90) 0.0
dmbt5401.pdf
DC COMPONENTS CO., LTD.DMBT5401DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose applications requiring high breakdown voltage.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).
2n5401.pdf
MAIN CHARACTERISTICS FEATURES IC -600mA Epitaxial silicon VCEO -160V PC 625mW High switching speed 2N5551 Complementary to 2N5551 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit
2n5401b.pdf
MAIN CHARACTERISTICS FEATURES IC -600mA Epitaxial silicon VCEO -165V High switching speed PC 625mW 2N5551 Complementary to 2N5551 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit
mmbt5401.pdf
Product specification PNP General Purpose Transistor MMBT5401 FEATURES Pb Epitaxial planar die construction. Lead-free Complementary NPN type available (MMBT5551). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT5401 2L SOT-23
gstmmbt5401.pdf
GSTMMBT5401 High Voltage PNP Transistors Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : -150V amplifier and switch. Collector-Base Voltage : -160V Collector Current-Continuous : -500mA Lead(Pb)-FreePackages & Pin Assignments GSTMMBT5401F(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Information
kbt5401c.pdf
KBT5401C PNP Silicon Transistor 2018.0302 2018.0302 2018.0302 2018.0302 1 000 2018.03.02 AUK Dalian 1 KBT5401C PNP Silicon Transistor Descriptions General purpose ampli
3dg5401.pdf
2N5401(3CG5401) PNP /SILICON PNP TRANSISTOR :/Purpose: General purpose high voltage amplifier :, 2N5551(3DG5551)/Features: High voltages, complementary pair.With 2N5551(3DG5551) /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -180 V CB
pt23t5401.pdf
PT23T5401 Transistor Feature 3 - Collector 1 - Base PNP epitaxial planar silicon transistor 2 - Emitter Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:3mil Absolute maximum rating@25 P
shd225401.pdf
SENSITRON SHD225401SEMICONDUCTORTECHNICAL DATADATA SHEET 972, REV. AHERMETIC POWER MOSFETN-CHANNELFEATURES 60 Volt, 0.04 Ohm, 20A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Equivalent to IRFM044 SeriesMAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE V
2n5401.pdf
2N5401TO-92 Plastic-Encapsulate Transistors FEATURES TO 92 Switching and Amplification in High Voltage Applications such as Telephony 1. EMITTER Low Current High Voltage 2. BASE PNP Transistors3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEB
mmbt5401.pdf
MMBT5401FEATURESFEATURESFEATURESFEATURESPNP High Voltage TransistorMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSCharacteristic Symbol Rating UnitCollector-Emitter VoltageV -150 VdcCEOCollector-Base Voltage V -160 VdcCBOEmitter-Base Voltage V -6.0 VdcEBOCollector CurrentContinuous Ic -500 mAdcTHERMAL CHARACTERISTICSTHERMAL CHARACTERISTICS
mmbt5401l mmbt5401h.pdf
RUMW UMW MMBT5401SOT-23 Plastic-Encapsulate TransistorsMMBT5401 TRANSISTOR (PNP) SOT23 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: 2L 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Vo
mmbt5401.pdf
MMBT5401FeaturesSOT-23(TO-236) For Switching and Amplifier Applications. Silicon Epitaxial Chip1 Base 2. Emitter 3. CollectoroC,Absolute Maximum Ratings (T =25 unless otherwiseAnoted)Parameter Symbol Value Unit-V 160 VCollector Base Voltage CBOCollector Emitter Voltage -V 150 VCEO-V 6VEmitter Base Voltage EBOCollector Current -I 600 mACP 350 mWPow
mmbt5401.pdf
MMBT5401Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS SOT-23 FeaturesComplementary to MMBT5551 Epitaxial planar die construction Power Dissipation of 300mW 1. BASE MARKING: 2L2. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCB
mmbt5401.pdf
MMBT5401 TRANSISTOR (PNP)FEATURES SOT-23 Complementary to MMBT5551 Ideal for Medium Power Amplification and SwitchingMARKING: 2L 32MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage -160 V 2. EMITTER VCEO Collector-Emitter Voltage -150 V 3. COLLECTORVEBO Emitter-Base Voltage -5 V IC Collect
mmbt5401.pdf
SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 1. BASE Ideal for medium power amplification and switching 2. EMITTER 3. COLLECTOR - MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -15
mmbt5401.pdf
MMBT5401 HD-ST0.42SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )Features SOT- 23 Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching Marking: 2LSymbol Parameter Value Unit VCBO Collector-Base Voltage -160 V V Collector-Emitter Voltage -150 V CEOCV Emitter-Base Voltage -5 V EBOI Collector Current -600 mA C
2n5306 2n5306a 2n5307 2n5308 2n5308a 2n5309 2n5310 2n5354 2n5355 2n5356 2n5365 2n5366 2n5367 2n5400 2n5401 2n5418.pdf
tmpt5086 tmpt5087 tmpt5401 tmpta55 tmpta56 tmpta63 tmpta64 tmpta70 tmpta92 tmpta93 tmpth81.pdf
2n5401.pdf
2N5401 2N5401 TRANSISTOR (PNP) B C FEATURE Switching and Amplification in High Voltage Applications such as Telephony DIM MILLIMETERS Low Current(Max. 600mA) A 4.70 MAXEB 4.80 MAXG High Voltage(Max.160v) C 3.70 MAXDD 0.55 MAX E 1.00F 1.27G 0.85H 0.45_MAXIMUM RATINGS (Ta=25 unless otherwise noted) HJ 14.00 0.50+L 2.30F FM 0.51 MAXSymbol Pa
mmbt5401.pdf
MMBT5401PNP General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary NPN type available(MMBT5551). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specifiedSymbol Parameter Value UNITV collector-base voltage -160 V CBO V
mmbt5401.pdf
MMBT5401TRANSISTOR(PNP)FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching SOT-23 Plastic PackageMARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.6 A PC Collector Pow
mmbt5401-ms.pdf
www.msksemi.comMMBT5401-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (PNP)FEATURES Complementary to MMBT5551-MS Ideal for Medium Power Amplification and Switching1. BASEMARKING: 2L 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emit
mmbt5401-t3 mmbt5401g-t3.pdf
MMBT5401GENERAL PURPOSE TRANSISTORS PNP Silicon FEATURES High DC Current Gain Low Collector-Emitter Saturation Voltage C MECHANICAL DATA E Available in SOT-23Package Solderability: MIL-STD-202, Method 208 PB Free Products Are Available: 98.5% SN B Above Can Meet RoHS Environment Substance Directive Request ORDERING INFORMATION PART NUMBER PA
mmbt5401.pdf
MMBT5401 PNP Transistor Features For High Voltage Amplifer Applications. Silicon Epitaxial Chip.SOT-23 (TO-236) 1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings (T = 25) AParameter Symbol Value Unit Collector Base Voltage -VCBO 160 V Collector Emitter Voltage -VCEO 150 V Emitter Base Voltage -VEBO 5 V Collector Current -I 600 mA CPower Dissipation P
mmbt5401-l mmbt5401-h.pdf
Jingdao Microelectronics co.LTD MMBT5401MMBT5401SOT-23PNP TRANSISTOR3FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO -160 V2.EMITTER3.COLLECTORCollec
sxt5401.pdf
SXT5401High Voltage TransistorsSOT-89 DESCRIPTION & FEATURES High Collector Breakdown Voltage (VCBO=-160V, VCEO=-150V) (ICBO=-50nA(Max.), @VCB=-120V) Low Leakage Current VCE(sat)=-0.5V(Max.), @IC=-50mA, IB=-5mA Low Saturation Voltage Low NoiseNF=8bB(Max.) PIN ASSIGNMENTPIN NUMBER PIN NAME FUNCTION SOT-89 B 1 BASE C 2 COLLECTOR E 3 EMITTER DEVICE MA
mmbt5401dw.pdf
MMBT5401DW Descriptions Double silicon PNP transistor in a SOT-363 Plastic Package. Features High voltage, complementary Pair with MMBT5551DW. Applications General purpose high voltage amplifier. Equivalent Circuit PinningPIN 14Emitter PIN 25Base PIN 36Collector hFE Classifications & Marking See Marking Instructions. REV.081 of 6MMB
mmbt5401.pdf
Integrated inOVP&OCP productsprovider MMBT5401 TRANSISTOR (PNP)FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emit
mmbt5401 mmbt5401-l mmbt5401-h.pdf
MMBT5401 SOT-23 PNP Transistors321.BaseFeatures 2.Emitter1 3.Collector High Voltage TransistorsPb-Free Packages are Available Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector-base voltage VCBO -160 VCollector-emitter voltage VCEO -150 VEmitter-base voltage VEBO -5 VCollector current-continuous IC -0.6 ACollector P
mmbt5401.pdf
MMBT5401 MMBT5401 TRANSISTOR (PNP) FEATURES Complimentary to MMBT5551 MARKING:2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -160 V VCEO Collector-Emitter Voltage - -150 V VEBO Emitter-Base Vo
mmbt5401l mmbt5401h.pdf
MMBT5401 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT5551 ; Complementary to MMBT5551 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Pack
mmbt5401.pdf
MMBT3904MMBT5401AO3400SI2305MMBT5401 TRANSISTOR (PNP) FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching SOT-23 1BASE 2EMITTER MARKING: 2L 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 VVCEO Collector-Emitter Voltage -150 VVEBO Emitter-Base Vo
tpao5401el.pdf
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mmdt5401.pdf
RoHS COMPLIANT MMDT5401Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K4M Equivalent circuit 1 / 5 S-S3208 Yangzhou
mmbt5401q.pdf
RoHS RoHSCOMPLIANT COMPLIANTMMBT5401Q PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solderable per J-
mmbt5401.pdf
RoHS COMPLIANT MMBT5401 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking:2L Maximum Rantings (Ta=25) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=-1.0mAdc, IB=0 -160 Collector-Base Voltage VCBO V IC=-100uAdc, IE=0 -180 Emitter-Base Voltage VEBO V IE=-10uAdc, IC
mmst5401.pdf
RoHS COMPLIANT MMST5401 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 Marking:K4M Maximum Rantings (Ta=25) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=-1.0mAdc, IB=0 -150 Collector-Base Voltage VCBO
mmbt5401.pdf
MMBT5401 MMBT5401 SOT-23 Plastic-Encapsulate Transistors(PNP) General description SOT-23 Plastic-Encapsulate Transistors(PNP) FEATURES Complementary to MMBT5551 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT5401 2L . Maximum Ra
mmdt5401dw.pdf
Plastic-Encapsulate TransistorsSOT-363DUAL TRANSISTOR (PNP+PNP) FEATURES Complementary to MMDT5551DW Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING:2L MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -160 V CBOV Collector-Emitter Voltage -150 V CEOV Emitter-Base Vo
mmbt5401t.pdf
SOT-523 Plastic-Encapsulate TransistorsTRANSISTOR ( PNP)MMBT5401TSOT523FEATURES Complementary to MMBT5551W Small Surface Mount Package Ideal for Medium Power Amplificationand SwitchingMARKING:K4M1. BASE2. EMITTERMAXIMUM RATINGS (T =25 unless otherwise noted)a3. COLLECTORSymbol Parameter Value UnitVCBO Collector-Base Voltage -160 VVCEO Collector-Emi
mmbt5401.pdf
MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Curren
2n5401u.pdf
Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURE Switching and amplification in high voltage Applications such as telephony Low current(max. 500mA) High voltage(max.160v) MARKING: 5401MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Volta
fht5401-me.pdf
FHT5401-MEPNP Transistor DESCRIPTIONSSOT-23 PNP PNP transistor in a SOT-23 Plastic Package. APPLICATIONSGeneral purpose application,switching. PIN ASSIGNMENT1 BASE2 EMITTER3 COLLECTOR Equivalent Circuit Name rule Name Additiona
mmbt5401.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT5401FEATURES PNP High Voltage TransistorMAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageV -150 VdcCEO-Collector-Base VoltageV -160 VdcCBO-Emitte
mmbt5401.pdf
MMBT5401PNP GENERAL PURPOSE SWITCHING TRANSISTORVOLTAGE -150Volts POWER 300mWattsFEATURESPNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-150V.Collector current IC=-0.6A.ansition frequency fT>100MHz @ IC=-Tr20mAdc, VCE=-6Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminal
mmbt5401.pdf
MMBT5401BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symb
mmbt5401.pdf
PNP MMBT5401MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter V
hmbt5401.pdf
HMBT5401PNP-TRANSISTOR-500mA,-150V PNP PNP High Voltage Transistor SMDHMBT5401HMBT5401LT1Complementary to HMBT5551PNP, BECTransistor Polarity: PNPGeneral Purpose TransistorsTransistor pinout: BECSOT-23 PackageMMBT5401Marking Code:
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
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