Справочник транзисторов. 5401

 

Биполярный транзистор 5401 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 5401
   Маркировка: 2L
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.35 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.6 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 6 pf
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT23

 Аналоги (замена) для 5401

 

 

5401 Datasheet (PDF)

 ..1. Size:2471K  cn mot
5401.pdf

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5401MOTPNP-TRANSISTOR PNP PNP High Voltage Transistor SMD 5401PNP, BEC Complementary to 5401General Purpose Transistors Transistor Polarity: PNP Transistor pinout: BEC SOT-23 Package Marking Code: 2L hFE: 100~200, 200~300 Ldeal for Medium Power Amplification and Switching 5401In

 0.1. Size:177K  motorola
2n5400 2n5401.pdf

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5400/DAmplifier Transistors2N5400PNP Silicon*2N5401*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSRating Symbol 2N5400 2N5401 UnitCASE 2904, STYLE 1TO92 (TO226AA)CollectorEmitter Voltage VCEO 120 150 VdcCollectorBase Voltage VCBO 130 160 VdcEmitterB

 0.2. Size:189K  motorola
mmbt5401.pdf

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT5401LT1/DHigh Voltage TransistorMMBT5401LT1COLLECTORPNP Silicon3Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 150 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 160 VdcSOT23 (TO236AB)EmitterBase Volt

 0.3. Size:52K  philips
2n5401.pdf

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DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5401PNP high-voltage transistorProduct specification 2004 Oct 28Supersedes data of 1999 Apr 08Philips Semiconductors Product specificationPNP high-voltage transistor 2N5401FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 150 V).1 collector2 baseAPPLICATIONS3 emitter G

 0.4. Size:111K  philips
pmbt5401.pdf

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DISCRETE SEMICONDUCTORS DATA SHEETok, halfpageM3D088PMBT5401PNP high-voltage transistorProduct data sheet 2004 Jan 21Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetPNP high-voltage transistor PMBT5401FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 150 V).1 base2 emitterAPPLICATIONS3 collector Switchi

 0.5. Size:49K  philips
pmbt5401 3.pdf

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DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088PMBT5401PNP high-voltage transistor1999 Apr 15Product specificationSupersedes data of 1997 Apr 09Philips Semiconductors Product specificationPNP high-voltage transistor PMBT5401FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 150 V).1 base2 emitterAPPLICATIONS3 collector

 0.6. Size:49K  philips
2n5401 3.pdf

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DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5401PNP high-voltage transistor1999 Apr 08Product specificationSupersedes data of 1997 May 22Philips Semiconductors Product specificationPNP high-voltage transistor 2N5401FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 150 V).1 collector2 baseAPPLICATIONS3 emitter

 0.7. Size:49K  philips
pmst5401 3.pdf

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DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D187PMST5401PNP high-voltage transistor1999 Apr 29Product specificationSupersedes data of 1997 Jun 20Philips Semiconductors Product specificationPNP high-voltage transistor PMST5401FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 150 V).1 base2 emitterAPPLICATIONS3 collector

 0.8. Size:432K  st
2n5401hr.pdf

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2N5401HRHi-Rel PNP bipolar transistor 150 V, 0.5 ADatasheet - production dataFeatures 3BVCEO 150 V11IC (max) 0.5 A223HFE at 10 V - 150 mA > 60 TO-18 LCC-33 Hermetic packages4 ESCC and JANS qualified1 Up to 100 krad(Si) low dose rate2UBDescriptionPin 4 in UB is connected to the metallic lid.The 2N5401HR is a silicon planar PNP transistor

 0.9. Size:37K  st
so5401.pdf

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SO5401SMALL SIGNAL PNP TRANSISTORSType MarkingSO5401 P33 SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTING2CIRCUITS GENERAL PURPOSE AND HIGH VOLTAGE3AMPLIFIER 1SOT-23INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base Voltage (IE = 0) -160 VV Collector-Emitter Volt

 0.10. Size:71K  st
stzt5401.pdf

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STZT5401MEDIUM POWER AMPLIFIERADVANCE DATA SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTINGCIRCUITS GENERAL PURPOSE MAINLY INTENDED2FOR USE IN MEDIUM POWER INDUSTRIALAPPLICATION AND FOR AUDIO AMPLIFIER3OUTPUT STAGE21SOT-223INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO

 0.11. Size:94K  fairchild semi
fmbm5401.pdf

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FMBM5401 PNP General Purpose Amplifier This device has matched dies in SuperSOT-6.C2E1C1B2E2B1pin #1SuperSOTTM-6Mark: .4S2Absolute Maximum Ratings*Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage -150 VVCBO Collector-Base Voltage -160 VVEBO Emitter-Base Voltage -5.0 VIC Collector Current - Continuous -600 mATJ, TSTG Operating and Storage Junction

 0.12. Size:95K  fairchild semi
fmbs5401.pdf

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FMBS5401NCPNP General Purpose AmplifierC1 This device is designed as a general purpose amplifier and switch for Eapplications requiring high voltage.BCCpin #1SuperSOTTM-6 singleMark: .4S1PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage -150 VVCBO Collector-Bas

 0.13. Size:75K  fairchild semi
2n5401 mmbt5401.pdf

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2N5401 MMBT5401CEC TO-92BB SOT-23EMark: 2LPNP General Purpose AmplifierThis device is designed as a general purpose amplifier and switchfor applications requiring high voltages.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 150 VVCBO Collector-Base Voltage 160 VVEBO Emitter-Base Voltage 5.0 VI

 0.14. Size:56K  fairchild semi
kst5401.pdf

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KST5401High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 VVCEO Collector-Emitter Voltage -150 VVEBO Emitter-Base Voltage -5 VIC Collector Current -500 mAPC Collector Power Dissipation 350 mWTSTG Storage T

 0.15. Size:67K  fairchild semi
mmbt5401.pdf

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MMBT5401PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for Capplications requiring high voltage.EBSOT-23Mark: 2LPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage -150 VVCBO Collector-Base Voltage -160 VVEBO Emitter-Bas

 0.16. Size:53K  samsung
2n5401.pdf

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2N5401 PNP EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 150V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -160 VCollector-Emitter Voltage VCEO -150 VEmitter-Base Voltage VEBO -5 VCollector Current IC -600 mACollector Dissipation PC 625 m

 0.17. Size:227K  vishay
si5401dc.pdf

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Si5401DCVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.032 at VGS = - 4.5 V - 7.1 TrenchFET Power MOSFET0.040 at VGS = - 2.5 V - 6.4 16.5- 20 Ultra-Low On-Resistance0.053 at VGS = - 1.8 V - 5.5 Thermally Enhanced ChipFET Package 40 %

 0.18. Size:324K  central
cmpt5401.pdf

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CMPT5401www.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.MARKING CODE: C2LSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage VC

 0.19. Size:342K  central
cmut5401.pdf

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CMUT5401www.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.MARKING CODE: 54CSOT-523 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage V

 0.20. Size:80K  central
2n5400 2n5401.pdf

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145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 0.21. Size:290K  central
cxt5401e.pdf

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CXT5401Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CXT5401E is a PNP Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage.MARKING: FULL PART NUMBERFEATURES: High Collector Breakdown Voltage: 250VSOT-89 CASE Low L

 0.22. Size:349K  central
cmut5401e.pdf

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CMUT5401Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT5401E is a PNP Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging.MARKING CODE: 4C5FEATURES:SOT-523 CASE High Collector Bre

 0.23. Size:329K  central
cmpt5401e.pdf

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CMPT5401Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5401E is an PNP Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging.MARKING CODE: C540FEATURES: High Collector Breakdown Voltag

 0.24. Size:534K  central
czt5401e.pdf

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CZT5401Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CZT5401E is a PNP Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage.MARKING: FULL PART NUMBERFEATURES: High Collector Breakdown Voltage 250VSOT-223 CASESOT-223

 0.25. Size:243K  diodes
zxtp5401g.pdf

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ZXTP5401G150V, SOT223, PNP High voltage transistorSummary BVCEO > -150VBVEBO > -5VIC(cont) = -600mA PD = 2WComplementary part number ZXTN5551GDescriptionCA high voltage PNP transistor in a surface mount packageFeaturesB 150V rating SOT223 packageEApplicationsE High voltage amplificationCCOrdering informationDevice Reel size Tape width Quantit

 0.26. Size:247K  diodes
zxtp5401z.pdf

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ZXTP5401Z150V, SOT89, PNP High voltage transistorSummary BVCEO > -150VBVEBO > -5VIC(cont) = -600mA PD = 1.2WComplementary part number ZXTN5551ZDescriptionCA high voltage PNP transistor in a small outline surface mount package.FeaturesB 150V rating SOT89 packageEApplications High voltage amplificationEOrdering informationCCDevice Reel size Tap

 0.27. Size:278K  diodes
dmmt5401.pdf

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DMMT5401 150V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data BVCEO > -150V Case: SOT26 (SC74R) Case Material: Molded Plastic. Green Molding Compound. 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) UL Flammability Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD

 0.28. Size:455K  diodes
dzt5401.pdf

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DZT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -150V Case: SOT223 IC = -600mA high Collector Current Case Material: Molded Plastic. Green Molding Compound. Ideal for Medium Power Switching or Amplification Applications UL Flammability Rating 94V-0 Complementary PNP Type: DZT5551 Moisture Sensitivity: Level 1 pe

 0.29. Size:374K  diodes
mmdt5401.pdf

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MMDT5401 150V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Complementary NPN Type Available (MMDT5551) Case Material: Molded Plastic, Green Molding Compound, Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Ultra-Small Surface Mount Packag

 0.30. Size:287K  diodes
mmbt5401.pdf

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MMBT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary NPN Type - MMBT5551 Case Material: Molded Plastic, Green Molding Compound Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes

 0.31. Size:26K  diodes
fmmt5400 fmmt5401.pdf

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SOT SI I O A A T 00HI H O TA T A SISTO S T 0 ISS O 6 T I D T I T T T T T T T T A SO T A I ATI S T T T IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T T T I I IT DITI II V V I V I II i V V I V I i V V I V I II I V V V V T V V V V T i I V V T 8 I V V

 0.32. Size:187K  diodes
zxtp5401fl.pdf

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A Product Line ofDiodes IncorporatedZXTP5401FL 150V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits Mechanical Data BVCEO > -150V Case: SOT23 Maximum Continuous Collector Current IC = -600mA UL Flammability Rating 94V-0 Excellent hFE Characteristics up to IC = -50mA Case material: molded Plastic. Low Saturation Voltages

 0.33. Size:360K  diodes
dxt5401.pdf

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DXT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT89 Features Mechanical Data Case: SOT89 BVCEO > -150V Case Material: Molded Plastic. Green Molding Compound. IC = -600mA high Collector Current Ideal for Medium Power Switching or Amplification Applications UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Complementary NPN

 0.34. Size:70K  diodes
mmst5401.pdf

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SPICE MODEL: MMST5401MMST5401PNP SMALL SIGNAL SURFACE MOUNT TRANSISTORFeatures Epitaxial Planar Die ConstructionSOT-323 Complementary NPN Type Available (MMST5551)ADim Min Max Ideal for Medium Power Amplification and SwitchingC A0.25 0.40 Ultra-Small Surface Mount PackageB1.15 1.35B C Available in Lead Free/RoHS Compliant Version (Note 2)C2.00 2.20B ED0

 0.35. Size:275K  mcc
2n5401.pdf

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2N5401MCCTMMicro Commercial ComponentsELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)Characteristic Symbol Min Max UnitOFF CHARACTERISTICSCollectorEmitter Breakdown Voltage(1) V(BR)CEO Vdc(IC = 1.0 mAdc, IB = 0) 150 CollectorBase Breakdown Voltage V(BR)CBO Vdc(IC = 100 mAdc, IE = 0) 160 EmitterBase Breakdown Voltage V(BR)EBO 5.0 Vdc(IE

 0.36. Size:225K  mcc
mmdt5401 sot-363.pdf

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MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT5401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Marking:K4MPlastic-Encapsulate Ideal for Low Power Amplification and Switching Ultra-small Surface M

 0.37. Size:162K  mcc
mmbt5401 2.pdf

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MCCMicro Commercial ComponentsTMMMBT540120736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Plastic Collector Current: ICM=0.6AEncapsulate Collector-Base Voltage: V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OCTransistor Capable of 0.3Watts of Power Dissipation

 0.38. Size:433K  mcc
mmbt5401.pdf

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MCCMicro Commercial ComponentsTMMMBT540120736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Plastic Halogen free available upon request by adding suffix "-HF" Collector Current: ICM=0.6AEncapsulate Collector-Base Voltage: V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OC

 0.39. Size:183K  mcc
mmst5401.pdf

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MCCTMMicro Commercial Components20736 Marilla Street ChatsworthMMST5401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Power dissipation: 200mW (Tamb=25 )PNP Small Signal Collector current: -0.2A Marking : K4M Transistors Operating and Storage junction temperature range -55 to + 150 Lead Free Finish/RoHS

 0.40. Size:125K  onsemi
nsvmmbt5401lt3g.pdf

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MMBT5401L, SMMBT5401L,NSVMMBT5401LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)CompliantCASE 318STYLE 6MAXIMUM RATINGSCOLLECTO

 0.41. Size:121K  onsemi
2n5401rlrag.pdf

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2N5401Amplifier TransistorsPNP SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2BASECollector - Emitter Voltage VCEO 150 VdcCollector - Base Voltage VCBO 160 Vdc1Emitter - Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 600 mAdcTotal Device Dissipation @ TA = 25C PD 625 mWDer

 0.42. Size:76K  onsemi
nsvmmbt5401wt1g.pdf

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MMBT5401WHigh Voltage TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector-Emitter Vo

 0.43. Size:121K  onsemi
2n5401g.pdf

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2N5401Amplifier TransistorsPNP SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2BASECollector - Emitter Voltage VCEO 150 VdcCollector - Base Voltage VCBO 160 Vdc1Emitter - Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 600 mAdcTotal Device Dissipation @ TA = 25C PD 625 mWDer

 0.44. Size:216K  onsemi
mmbt5401m3.pdf

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MMBT5401M3High Voltage TransistorPNP SiliconThe MMBT5401M3 device is a spin-off of our popular SOT-23three-leaded device. It is designed for general purpose amplifierapplications and is housed in the SOT-723 surface mount package.www.onsemi.comThis device is ideal for low-power surface mount applications whereboard space is at a premium.FeaturesSOT-723 NSV Prefix for Au

 0.45. Size:125K  onsemi
mmbt5401lt1g.pdf

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MMBT5401LT1G,SMMBT5401LT1G,MMBT5401LT3GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236)CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 6Compliant*COLLECTORMAXIMUM RAT

 0.46. Size:81K  onsemi
mmbt5401l smmbt5401l nsvmmbt5401l.pdf

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MMBT5401L, SMMBT5401L,NSVMMBT5401LHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)CompliantCASE 318STYLE 6MAXIMUM RATINGSCOLLECTOR

 0.47. Size:76K  onsemi
mmbt5401wt1g.pdf

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MMBT5401WHigh Voltage TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector-Emitter Vo

 0.48. Size:145K  onsemi
2n5401-d.pdf

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2N5401Amplifier TransistorsPNP SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2BASECollector - Emitter Voltage VCEO 150 VdcCollector - Base Voltage VCBO 160 Vdc1Emitter - Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 600 mAdcTotal Device Dissipation @ TA = 25C PD 625 mWDer

 0.49. Size:73K  onsemi
mmbt5401w.pdf

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MMBT5401WHigh Voltage TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector-Emitter Vo

 0.50. Size:112K  onsemi
mmbt5401lt1g smmbt5401lt1g mmbt5401lt3g.pdf

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MMBT5401LT1G,SMMBT5401LT1G,MMBT5401LT3GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236)CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 6CompliantCOLLECTORMAXIMUM RATI

 0.51. Size:263K  onsemi
2n5401ybu 2n5401yta.pdf

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 0.52. Size:115K  onsemi
mmbt5401lt1-d.pdf

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MMBT5401LT1GHigh Voltage TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1Collector-Emitter Voltage VCEO -150 VdcBASECollector-Base Voltage VCBO -160 Vdc2Emitter-Base Voltage VEBO -5.0 VdcEMITTERCollector Current - Continuous IC -500 mAdcS

 0.53. Size:253K  utc
2n5401.pdf

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UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain, ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3- 2N5401G-x-AB3-R SOT-89 B C E Tape Reel2N5401L-x-T92-B 2N5401G-x-T92-B TO-92 E B C Tape Box2N5401

 0.54. Size:98K  utc
pzt5401.pdf

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UNISONIC TECHNOLOGIES CO., LTD. PZT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=-150V * High current gain APPLICATIONS * Telephone Switching Circuit * Amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 PZT5401L-x-AA3-R PZT5401G-x-AA

 0.55. Size:110K  utc
mmbt5401.pdf

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UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT5401G-x-AE3-R SOT-23 E B C Tape ReelNote: Pin Assignment: E: Emitter B: Base C: Collector MARKING www.unisonic.com.t

 0.56. Size:250K  auk
2n5401.pdf

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2N5401PNP Silicon TransistorDescription PIN Connection General purpose amplifier E High voltage application Features B High collector breakdown voltage : VCBO = -160V, VCEO = -160V Low collector saturation voltage : CVCE(sat)=-0.5V(MAX.) TO-92 Complementary pair with 2N5551 Ordering Information Type NO. Marking Package Code 2N5401 TO-9

 0.57. Size:249K  auk
2n5401n.pdf

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2N5401NSemiconductor Semiconductor PNP Silicon Transistor Description General purpose amplifier High voltage application Features High collector breakdown voltage : VCBO = -160V, VCEO = -160V Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) Complementary pair with 2N5551N Ordering Information Type NO. Marking Package Code 2N5401N 2N5401 T

 0.58. Size:252K  auk
sbt5401.pdf

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SBT5401PNP Silicon TransistorDescription PIN Connection General purpose amplifier High voltage application Features C High collector breakdown voltage : BVCBO = -160V, VCEO = -160V Low collector saturation voltage : EVCE(sat)=-0.5V(MAX.) SOT-23 Complementary pair with SBT5551 Ordering Information Type NO. Marking Package Code NFN

 0.59. Size:261K  auk
sbt5401f.pdf

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SBT5401FPNP Silicon TransistorDescription PIN Connection General purpose amplifier High voltage application 3 Features High collector breakdown voltage : 1 VCBO = -160V, VCEO = -160V Low collector saturation voltage : 2VCE(sat)=-0.5V(MAX.) SOT-23F Complementary pair with SBT5551F Ordering Information Type NO. Marking Package Code NFN

 0.61. Size:11K  semelab
2n5401csm.pdf

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2N5401CSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 150V A =(0.04 0.00

 0.62. Size:10K  semelab
2n5401dcsm.pdf

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2N5401DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 150V CEO6.22 0.13 A = 1.27 0.13I = 0.6A C(0.

 0.63. Size:337K  secos
2n5401.pdf

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2N5401 -0.6 A, -160 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Switching and amplification in high voltage Applications such as telephony J Low current (max. 600mA) A DMillimeter REF. Min. Max. B High voltage (max. 160V) A 4.40 4.70 B 4.30

 0.64. Size:527K  secos
mmdt5401.pdf

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MMDT5401Plastic-EncapsulateElektronische BauelementeMulti-Chip (PNP+PNP) TransistorRoHS Compliant ProductSOT-363o.055(1.40)8.047(1.20)0o .026TYPFeatures(0.65TYP) .021REF(0.525)REF* Epitaxial Planar Die Construction.053(1.35)* Complementary NPN Type Available (MMDT5551) .096(2.45).045(1.15).085(2.15).018(0.46).010(0.26)C2 B1 E1.014(0.35).006(0.15

 0.65. Size:614K  secos
czt5401.pdf

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CZT5401PNP Transistor Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-223Description The CZT5401 is designed for general purpose applications requiring high breakdown voltages.REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. 5 4 0 1D 0.02 0.10 1 6.30 6.70 Date CodeE 0 10 2 6.30 6.70 I 0.60 0.80 3 3.3

 0.66. Size:226K  secos
mmbt5401w.pdf

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MMBT5401W PNP Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE AL Ideal for Medium Power Amplification and Switching 33 Also Available in Lead Free Version Top View C B Complementary to MMBT5551W 11 22K ECollector 3 DH JF GMARKING: K4M 1

 0.67. Size:111K  secos
mmbt5401.pdf

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MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES ALIdeal for medium power amplification and switching 33Top View C B11 2MARKING 2K E2L DH JF GABSOLUTE MAXIMUM RATINGS Millimeter MillimeterREF. REF. Min. Max. Min. Max.Parameter Symb

 0.68. Size:367K  secos
bcp5401.pdf

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BCP5401PNP EpitaxialElektronische BauelementePlanar TransistorRoHS Compliant ProductSOT-89 FeaturesDesigned for gereral prupose application requiringhigh breakdown voltage.1231.BASE2.COLLECTOR3.EMITTERREF. REF. Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. Marking: 01C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 XXXXE 2.40 2.60

 0.69. Size:196K  taiwansemi
tsc5401ct.pdf

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Preliminary TSC5401 Very High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 700V 3. Base BVCBO 1500V IC 1A VCE(SAT) 1.0V @ IC / IB = 0.5A / 0.1A Features Block Diagram Very High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part N

 0.70. Size:38K  calogic
sd5000n sd5001n sd5002n sd5400cy sd5401cy sd5402cy.pdf

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High-Speed DMOS Quad FETAnalog Switch ArraysLLCSD5000 / SD5001 / SD5002SD5400 / SD5401 / SD5402FEATURES DESCRIPTION Low PropagatiomTime . . . . . . . . . . . . . . . . . . . . 600 psec The SD5000 Series are monolithic arrays of four bidirectional, Low On Resistance high performance analog switches manufactured with Low Insertion Loss implanted high-speed, high

 0.71. Size:274K  cdil
2n5401.pdf

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401TO-92CBECBEHigh Voltage PNP Transistor For General Purpose And Telephony Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 150 VCollector

 0.72. Size:162K  cdil
cmbt5401.pdf

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT5401SILICON PNP HIGHVOLTAGE TRANSISTORPNP transistorMarkingCMBT5401 = 2LPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 160 VCollectoremitter volt

 0.73. Size:105K  cdil
cc5401.pdf

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401(9AW)TO-92BCEMARKING : CC5401High Voltage PNP Transistor For General Purpose And Telephony Applications.ABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 150 VCollector -Base Voltage VCBO 160

 0.74. Size:567K  jiangsu
2n5401.pdf

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2N5401 TRANSISTOR (PNP) 1. EMITTER FEATURES 2. BASE Switching and Amplification in High Voltage 3. COLLECTOR Applications such as Telephony Low Current High VoltageMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Volta

 0.75. Size:4388K  jiangsu
mmdt5401.pdf

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR (PNP+PNP) SOT-363 FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching MRKING:K4M MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO

 0.76. Size:1586K  jiangsu
cxt5401.pdf

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors CXT5401 TRANSISTOR (PNP) SOT-89-3L FEATURE 1. BASE Switching and amplification in high voltage 1 1 Applications such as telephony Low current(max. 500mA) 2 2 2. COLLECTOR High voltage(max.160v) 3 3. EMITTER 5401MAXIMUM RATINGS (Ta=25 unless otherwi

 0.77. Size:604K  jiangsu
czt5401.pdf

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate TransistorsSOT-223 CZT5401 TRANSISTOR (PNP)FEATURES 1. BASE High Voltage High Voltage Amplifier Application2. COLLECTOR3. EMITTERMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -160 V CBOV Collector-Emitter Voltage -150 V CEOV

 0.78. Size:743K  jiangsu
mmbt5401.pdf

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) SOT23 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: 2L 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage -

 0.79. Size:640K  jiangsu
ad-mmbt5401.pdf

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www.jscj-elec.com AD-MMBT5401 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBT5401 series Plastic-Encapsulated Transistor AD-MMBT5401 series Transistor (PNP) FEATURES Complementary to AD-MMBT5551 series For medium power amplification and switching AEC-Q101 qualified MARKING 2L = Device code 2L Version 1.0 1 / 6 2021-07-01 www.jscj-elec

 0.80. Size:1514K  jiangsu
mmst5401.pdf

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors MMST5401 TRANSISTOR (PNP) SOT323 FEATURES Complementary to MMST5551 Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING:K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter

 0.81. Size:355K  kec
2n5401.pdf

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SEMICONDUCTOR 2N5401TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=-160V, VCEO=-150VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=-50nA(Max.) @VCB=-120VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=-

 0.82. Size:32K  kec
2n5401c.pdf

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SEMICONDUCTOR 2N5401CTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=-160V, VCEO=-150VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=-50nA(Max.) @VCB=-120VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=-0.5V(

 0.83. Size:344K  kec
2n5401s.pdf

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SEMICONDUCTOR 2N5401STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.EL B LDIM MILLIMETERS_FEATURES A 2.93 0.20+B 1.30+0.20/-0.15High Collector Breakdwon VoltageC 1.30 MAX23 D 0.40+0.15/-0.05: VCBO=-160V, VCEO=-150VE 2.40+0.30/-0.201Low Leakage Current. G 1.90H 0.95: ICBO=-50nA(Max.) @VCB=-120VJ 0.

 0.84. Size:165K  zovie
mmbt5401gh.pdf

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Zowie Technology CorporationHigh Voltage TransistorLead free productHalogen-free typeFEATURE We declare that the material of product compliance with RoHS requirements.MMBT5401GH312SOT-23MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage V 150 VdcCEO3COLLECTORCollectorBase Voltage V CBO 160 VdcEmitterBase Voltage V EBO 5.0

 0.85. Size:608K  htsemi
cxt5401.pdf

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CXT5401TRANSISTOR (PNP) SOT-89 FEATURE Switching and amplification in high voltage 1. BASE Applications such as telephony 1 1 Low current(max. 500mA) High voltage(max.160v) 2 2 2. COLLECTOR 3 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V

 0.86. Size:621K  htsemi
mmbt5401.pdf

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MMBT5401TRANSISTOR(PNP) SOT-231. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current

 0.87. Size:359K  htsemi
mmst5401.pdf

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MMST5401TRANSISTOR(PNP)SOT323 FEATURES Complementary to MMST5551 Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING:K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage -160 V CBOV Collector-Emitter Voltage -150 V CEOV Emitter

 0.88. Size:295K  gsme
mmbt5401.pdf

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Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM5401MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO -150 Vdc-

 0.89. Size:204K  lge
2n5401.pdf

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2N5401(PNP) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160v) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage -160 V

 0.90. Size:194K  lge
mmdt5401.pdf

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MMDT5401 Dual Transistor (NPN/PNP)SOT-363Features Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching MRKING:K4M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector- Base Voltage -160 V VCEO Collector-Emitter Vol

 0.91. Size:194K  lge
mmbt5401.pdf

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MMBT5401 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING: 2L Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emit

 0.92. Size:680K  wietron
2n5401.pdf

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2N5401PNP TransistorsTO-9211. EMITTER 232. BASE3. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol 2N5401UnitCollector-Emitter Voltage VCEO -150 VdcCollector-Base Voltage VCBO -160VdcEmitter-Base VOltage VEBO-5.0 VdcCollector Current IC600 mAdcTotal Device Dissipation T =25 C PD W0.625AJunction Temperature T 150j CStorage, Temperature Tstg

 0.93. Size:326K  wietron
pzt5401.pdf

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PZT5401PNP Epitaxial Planar TransistorCOLLECTOR2, 4 SOT-223P b Lead(Pb)-Free 41. BASEBASE2.COLLECTOR113.EMITTER24.COLLECTOR33EM ITTERABSOLUTE MAXIMUM RATINGS (TA=25 C)Rating Symbol Value UnitVCBO -160 VCollector to Base VoltageVCEO V-150Collector to Emitter VoltageVCollector to Base Voltage VEBO -5IC(DC) -600 ACollector Current1.5Total Dev

 0.94. Size:497K  wietron
mmbt5401.pdf

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MMBT5401High Voltage PNP TransistorsCOLLECTOR3311BASE22SOT-23EMITTERWEITRONhttp://www.weitron.com.twMMBT5401ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)Characteristics Symbol Min Max UnitON CHARACTERISTICSDC Current Gain-50(IC=-1.0mAdc, VCE=-5.0Vdc)hFE-60 240(IC=-10mAdc, VCE=-5.0Vdc)50-(IC=-50mAdc, VCE=-5.0Vdc)

 0.95. Size:325K  willas
mmbt5401lt1.pdf

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FM120-M WILLASMMBT5401LT1THRUHigh Voltage TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HFEATURE Low profile surface mounted application in order to o

 0.96. Size:38K  hsmc
hmbt5401.pdf

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Spec. No. : HE6819HI-SINCERITYIssued Date : 1993.06.30Revised Date : 2004.09.07MICROELECTRONICS CORP.Page No. : 1/4HMBT5401PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT5401 is designed for general purpose applications requiring highbreakdown voltages.SOT-23Features High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA) Complements to NPN Type HMBT555

 0.97. Size:44K  hsmc
hm5401.pdf

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Spec. No. : HE9503HI-SINCERITYIssued Date : 1996.04.09Revised Date : 2004.12.21MICROELECTRONICS CORP.Page No. : 1/5HM5401PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HM5401 is designed for general purpose applications requiring highbreakdown voltages.SOT-89Features High current-emitter breakdown voltage.VCEO=150V(@IC=1mA) Complements to NPN type HM5551Absolu

 0.98. Size:52K  hsmc
h2n5401.pdf

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Spec. No. : HE6203HI-SINCERITYIssued Date : 1992.09.22Revised Date : 2005.01.20MICROELECTRONICS CORP.Page No. : 1/5H2N5401PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N5401 is designed for general purpose applications requiring highbreakdown voltages.TO-92Features Complements to NPN Type H2N5551 High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))

 0.99. Size:153K  aosemi
ao5401e.pdf

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AO5401EP-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO5401E/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge andID = -0.5 A (VGS = -4.5V)operation with gate voltages as low as 1.8V. ThisRDS(ON)

 0.100. Size:301K  shenzhen
2n5401.pdf

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) TO-92 FEATURE Switching and amplification in high voltage 1.EMITTER Applications such as telephony 2.BASE Low current(max. 600mA) High voltage(max.160v) 3.COLLECTOR 1 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value

 0.101. Size:910K  shenzhen
mmbt5401lt1.pdf

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5401LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR - Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range Unit: mm

 0.102. Size:153K  cystek
btp5401a3.pdf

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Spec. No. : C307A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401A3Description The BTP5401A3 is designed for general purpose amplification. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -150V Complementary to BTN5551A3. Symbol Outline BTP5401A3TO-92 BBase

 0.103. Size:307K  can-sheng
2n5401.pdf

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TO-92 Plastic-Encapsulate TransistorsTRANSISTOR (PNP)TRANSISTOR (PNP)TRANSISTOR (PNP)2N5401 TRANSISTOR (PNP)FEATUREFEATUREFEATUREFEATURETO-92TO-92TO-92TO-92 Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage Applications su

 0.104. Size:304K  can-sheng
mmbt5401 sot-23.pdf

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ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) FEATURES Complimentary to MMBT5551 MARKING:2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B

 0.105. Size:895K  blue-rocket-elect
2n5401.pdf

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2N5401 Rev.F Mar-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features , 2N5551 High voltages, complementary pair with 2N5551. / Applications General purpose high voltage amplifier. / Equivalent

 0.106. Size:920K  blue-rocket-elect
mmbt5401t.pdf

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MMBT5401T(BR3CG5401T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features , MMBT5551T(BR3DG5551T)High voltage, complementary Pair with MMBT5551T(BR3DG5551T). / Applications General purpose high voltag

 0.107. Size:1108K  blue-rocket-elect
mmbt5401.pdf

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MMBT5401 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , MMBT5551 High voltage, complementary Pair with MMBT5551. / Applications General purpose high voltage amplifier.

 0.108. Size:950K  semtech
mmbt5401-haf.pdf

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MMBT5401-HAF PNP Silicon Epitaxial Planar Transistor Features Halogen and Antimony Free(HAF), RoHS compliant 1. Base 2. Emitter 3. Collector TO-236 Plastic Package Applications For high voltage amplifier applications Absolute Maximum Ratings (T = 25 ) aParameter Symbol Value Unit Collector Base Voltage -V 160 V CBOCollector Emitter Voltage -V 150 V CEOEmitt

 0.109. Size:194K  semtech
2n5400 2n5401.pdf

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2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors 2N5550 and 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C)

 0.110. Size:150K  semtech
mmbt5401.pdf

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MMBT5401 PNP Silicon Epitaxial Planar Transistor for high voltage amplifier applications TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 160 VCollector Emitter Voltage -VCEO 150 VEmitter Base Voltage -VEBO 5 VCollector Current Continuous -IC 600 mAPower Dissipation Ptot 350 mWOJunction Temperature Tj 1

 0.111. Size:122K  lrc
lmbt5401lt1g.pdf

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LESHAN RADIO COMPANY, LTD.High Voltage TransistorFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5401LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and S-LMBT5401LT1GControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Shipping3LMBT5401LT1G

 0.112. Size:212K  lrc
lmbt5401dw1t1g lmbt5401dw1t3g.pdf

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LESHAN RADIO COMPANY, LTD.DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5401DW1T1GFEATURES-LMBT5401DW1T1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.65DEVICE MARKING AND ORDERING INFORMATION 4De

 0.113. Size:212K  lrc
lmbt5401dw1t1g.pdf

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LESHAN RADIO COMPANY, LTD.DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5401DW1T1GFEATURES-LMBT5401DW1T1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.65DEVICE MARKING AND ORDERING INFORMATION 4De

 0.114. Size:122K  lrc
lmbt5401lt1g lmbt5401lt3g.pdf

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LESHAN RADIO COMPANY, LTD.High Voltage TransistorFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5401LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and S-LMBT5401LT1GControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Shipping3LMBT5401LT1G

 0.115. Size:103K  shantou-huashan
h5401.pdf

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P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5401 AMPLIFIER TRANSISTOR Collector-Emitter Voltage:Vceo=150V. Collector Dissipation:Pc(max)=625mW ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150

 0.116. Size:50K  tysemi
kxt5401.pdf

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SMD Type TransistorsProduct specificationKXT5401 (CXT5401)SOT-89 Unit: mm+0.14.50+0.1 1.50-0.1-0.11.80+0.1-0.1FeaturesHigh current (max. 500mA).Low voltage (max. 150 V).+0.1 +0.10.48-0.1 0.53+0.1 0.44-0.1-0.11. Base3.00+0.1-0.12. Collector3. EmiitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -160 VCollect

 0.117. Size:140K  tysemi
kmbt5401.pdf

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SMD Type TransistorsSMD Type TransistorsSMD Type TransistorSMD Type TProduct specificationKMBT5401(MMBT5401)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesHigh Voltage TransistorsPb-Free Packages are Available12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-b

 0.118. Size:170K  first silicon
2n5401.pdf

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SEMICONDUCTOR2N5401TECHNICAL DATA 2N5401 TRANSISTOR (PNP) B C FEATURE Switching and Amplification in High Voltage Applications such as Telephony DIM MILLIMETERS Low Current(Max. 600mA) A 4.70 MAXEB 4.80 MAXG High Voltage(Max.160v) C 3.70 MAXDD 0.55 MAX E 1.00F 1.27G 0.85H 0.45_MAXIMUM RATINGS (Ta=25 unless otherwise noted) HJ 14.00 0.50+L 2

 0.119. Size:752K  first silicon
fmbt5401lg.pdf

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FMBT5401LGHigh Voltage TransistorsFeaturesPackage outline Pb-Free package is available.3Device Marking And Ordering InformationDevice Marking And Ordering InformationDevice Package Shipping1FMBT5401LG SOT-23 3000/Tape&Reel2SOT23Maximum RatingsRating Symbol Value UnitCollector-Emitter Voltage VCEO -150 Vdc3COLLECTORCollector-Base Voltage VCBO -160 VdcE

 0.120. Size:225K  first silicon
2n5401s.pdf

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SEMICONDUCTOR2N5401STECHNICAL DATAHigh Voltage TransistorFEATURE3We declare that the material of product compliance with RoHS requirements.21DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Shipping SOT232N5401S 2L 3000/Tape&ReelMAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage V 150 VdcCEO3COLLECTORCollectorBase Voltage V CB

 0.121. Size:1336K  kexin
dmmt5401.pdf

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SMD Type TransistorsPNP TransistorsDMMT5401 (KMMT5401)( )SOT-23-6 Unit:mm+0.10.4 -0.1 Features5 46 Epitaxial Planar Die Construction Complementary NPN Type Available (DMMT5551) Ideal for Medium Power Amplification and Switching Intrinsically Matched PNP Pair (Note 1)2 31 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)+0.020.15 -0.02+0.0

 0.122. Size:385K  kexin
mmdt5401.pdf

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SMD Type TransistorsPNP TransistorsMMDT5401 (KMDT5401) Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Dual Transistors (PNP+PNP) Complementary NPN Type Available(MMDT 5551) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -

 0.123. Size:1165K  kexin
cxt5401.pdf

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SMD Type TransistorsPNP Transistors CXT5401 (KXT5401) Features1.70 0.1 Switching and amplification in high voltage Applications such as telephony Low current(max. 500mA) High voltage(max.160v)0.42 0.10.46 0.1 Comlementary to CXT55511.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base V

 0.124. Size:313K  kexin
czt5401.pdf

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SMD Type TransistorsPNP TransistorsCZT5401 (KZT5401)Unit:mmSOT-2236.500.23.000.1 Features4 High Voltage High Voltage Amplifier Application1 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Coll

 0.125. Size:1140K  kexin
mmbt5401.pdf

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SMD Type TransistorsSMD TypePNP TransistorsMMBT5401 (KMBT5401)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesHigh Voltage TransistorsPb-Free Packages are Available1 2+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -160 VCollector-emitter volta

 0.126. Size:74K  kexin
kmbt5401.pdf

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SMD Type TransistorsPNP TransistorsKMBT5401(MMBT5401)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesHigh Voltage TransistorsPb-Free Packages are Available12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -160 VCollector-emitter voltage VCEO -150

 0.127. Size:329K  kexin
mmst5401.pdf

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SMD Type TransistorsPNP TransistorsMMST5401 (KMST5401) Features Small Surface Mount Package Ideal for Medium Power Amplificationand Switching Complementary to MMST55511.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -150 V Emitter - Base Vol

 0.128. Size:436K  panjit
mmbt5401.pdf

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MMBT5401HIGH VOLTAGE TRANSISTORPNP SiliconFEATURES Lead free in compliance with EU RoHS 2.00.120(3.04) Green molding compound as per IEC 61249 standard0.110(2.80)MECHANICAL DATA0.056(1.40)0.047(1.20) Case : SOT-23 plastic case. Terminals : Solderable per MIL-STD-750,Method 20260.079(2.00) 0.008(0.20)0.070(1.80) 0.003(0.08) Standard packaging : 8mm ta

 0.129. Size:100K  chenmko
cht5401sgp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHT5401SGPSURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts CURRENT 0.2 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-88/SOT-363FEATURE* Small surface mounting type. (SC-88/SOT-363)* Suitable for high packing density.(1) (6)CONSTRUCTION0.651.2~1.4 2.0~2.20.65* Two PNP transi

 0.130. Size:188K  chenmko
cht5401wgp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHT5401WGPSURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts CURRENT 0.2 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-70/SOT-323FEATURE* Small surface mounting type. (SC-70/SOT-323)* Suitable for high packing density.0.65CONSTRUCTION 1.30.12.00.20.65* PNP transistors in on

 0.131. Size:151K  chenmko
cht5401zgp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHT5401ZGPSURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts CURRENT 0.5 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. ( SC-73/SOT-223 )* Suitable for high packing density.1.65+0.156.50+0.200.90+0.052.0+0.33.00+0.10CONSTRUCTION*PNP SIL

 0.132. Size:109K  chenmko
cht5401gp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHT5401GPSURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts CURRENT 0.2 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SOT-23FEATURE* Small flat package. ( SOT-23 )* Suitable for high packing density.(1)CONSTRUCTION(3)* PNP transistors in one package.(2)MARKING( ) ( ).055 1.4

 0.133. Size:165K  chenmko
cht5401xgp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHT5401XGPSURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts CURRENT 0.5 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-62/SOT-89FEATURE* Suitable for high packing density.4.6MAX. 1.6MAX.1.7MAX. 0.4+0.05CONSTRUCTION*PNP SILICON Transistor+0.080.45-0.05+0.08 +0.080.40-0.05 0.

 0.134. Size:475K  ciclon
csd25401q3.pdf

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P-Channel CICLON NexFET Power MOSFETs CSD25401Q3 Product Summary Features Ultra Low Qg & Qgd VDS -20 VQg 8.8 nC Low Thermal Resistance D 1 8 S1 8G SQgd 2.1 nCD SD 2 7 S2 7 Low Rdson SD VGS = -2.5V 13.5 m SD 3 6 S3 6 D RDS(on) SVGS = -4.5V 8.7 m Pb Free Terminal Plating DG 4 5G 4 5 SVth -0.85 V RoHS Compliant

 0.135. Size:92K  comchip
mmbt5401-g.pdf

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General Purpose TransistorMMBT5401-G (PNP)RoHS DeviceSOT-23Features -Epitaxial planar die construction.0.119(3.00)0.110(2.80) -Complementary NPN type available (MMBT5551-G).3 -Ideal for medium power amplification and switching.0.056(1.40)0.047(1.20)1 2Diagram: 0.006(0.15)0.079(2.00)Collector0.002(0.05)0.071(1.80)30.041(1.05) 0.100(2.55)0.035(0.90) 0.0

 0.136. Size:125K  dc components
dmbt5401.pdf

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DC COMPONENTS CO., LTD.DMBT5401DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose applications requiring high breakdown voltage.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).

 0.137. Size:750K  feihonltd
2n5401.pdf

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MAIN CHARACTERISTICS FEATURES IC -600mA Epitaxial silicon VCEO -160V PC 625mW High switching speed 2N5551 Complementary to 2N5551 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit

 0.138. Size:569K  feihonltd
2n5401b.pdf

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MAIN CHARACTERISTICS FEATURES IC -600mA Epitaxial silicon VCEO -165V High switching speed PC 625mW 2N5551 Complementary to 2N5551 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit

 0.139. Size:252K  galaxy
mmbt5401.pdf

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Product specification PNP General Purpose Transistor MMBT5401 FEATURES Pb Epitaxial planar die construction. Lead-free Complementary NPN type available (MMBT5551). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT5401 2L SOT-23

 0.140. Size:265K  globaltech semi
gstmmbt5401.pdf

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GSTMMBT5401 High Voltage PNP Transistors Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : -150V amplifier and switch. Collector-Base Voltage : -160V Collector Current-Continuous : -500mA Lead(Pb)-FreePackages & Pin Assignments GSTMMBT5401F(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Information

 0.141. Size:6784K  kodenshi
kbt5401c.pdf

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KBT5401C PNP Silicon Transistor 2018.0302 2018.0302 2018.0302 2018.0302 1 000 2018.03.02 AUK Dalian 1 KBT5401C PNP Silicon Transistor Descriptions General purpose ampli

 0.142. Size:245K  lzg
3dg5401.pdf

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2N5401(3CG5401) PNP /SILICON PNP TRANSISTOR :/Purpose: General purpose high voltage amplifier :, 2N5551(3DG5551)/Features: High voltages, complementary pair.With 2N5551(3DG5551) /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -180 V CB

 0.143. Size:112K  prisemi
pt23t5401.pdf

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PT23T5401 Transistor Feature 3 - Collector 1 - Base PNP epitaxial planar silicon transistor 2 - Emitter Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:3mil Absolute maximum rating@25 P

 0.144. Size:60K  sensitron
shd225401.pdf

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SENSITRON SHD225401SEMICONDUCTORTECHNICAL DATADATA SHEET 972, REV. AHERMETIC POWER MOSFETN-CHANNELFEATURES 60 Volt, 0.04 Ohm, 20A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Equivalent to IRFM044 SeriesMAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE V

 0.145. Size:886K  slkor
2n5401.pdf

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2N5401TO-92 Plastic-Encapsulate Transistors FEATURES TO 92 Switching and Amplification in High Voltage Applications such as Telephony 1. EMITTER Low Current High Voltage 2. BASE PNP Transistors3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEB

 0.146. Size:474K  slkor
mmbt5401.pdf

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MMBT5401FEATURESFEATURESFEATURESFEATURESPNP High Voltage TransistorMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSCharacteristic Symbol Rating UnitCollector-Emitter VoltageV -150 VdcCEOCollector-Base Voltage V -160 VdcCBOEmitter-Base Voltage V -6.0 VdcEBOCollector CurrentContinuous Ic -500 mAdcTHERMAL CHARACTERISTICSTHERMAL CHARACTERISTICS

 0.147. Size:596K  umw-ic
mmbt5401l mmbt5401h.pdf

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RUMW UMW MMBT5401SOT-23 Plastic-Encapsulate TransistorsMMBT5401 TRANSISTOR (PNP) SOT23 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: 2L 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Vo

 0.148. Size:419K  agertech
mmbt5401.pdf

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MMBT5401FeaturesSOT-23(TO-236) For Switching and Amplifier Applications. Silicon Epitaxial Chip1 Base 2. Emitter 3. CollectoroC,Absolute Maximum Ratings (T =25 unless otherwiseAnoted)Parameter Symbol Value Unit-V 160 VCollector Base Voltage CBOCollector Emitter Voltage -V 150 VCEO-V 6VEmitter Base Voltage EBOCollector Current -I 600 mACP 350 mWPow

 0.149. Size:2327K  born
mmbt5401.pdf

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MMBT5401Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS SOT-23 FeaturesComplementary to MMBT5551 Epitaxial planar die construction Power Dissipation of 300mW 1. BASE MARKING: 2L2. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCB

 0.150. Size:3380K  fuxinsemi
mmbt5401.pdf

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MMBT5401 TRANSISTOR (PNP)FEATURES SOT-23 Complementary to MMBT5551 Ideal for Medium Power Amplification and SwitchingMARKING: 2L 32MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage -160 V 2. EMITTER VCEO Collector-Emitter Voltage -150 V 3. COLLECTORVEBO Emitter-Base Voltage -5 V IC Collect

 0.151. Size:344K  fms
mmbt5401.pdf

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SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 1. BASE Ideal for medium power amplification and switching 2. EMITTER 3. COLLECTOR - MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -15

 0.152. Size:2294K  high diode
mmbt5401.pdf

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MMBT5401 HD-ST0.42SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )Features SOT- 23 Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching Marking: 2LSymbol Parameter Value Unit VCBO Collector-Base Voltage -160 V V Collector-Emitter Voltage -150 V CEOCV Emitter-Base Voltage -5 V EBOI Collector Current -600 mA C

 0.155. Size:565K  jsmsemi
2n5401.pdf

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2N5401 2N5401 TRANSISTOR (PNP) B C FEATURE Switching and Amplification in High Voltage Applications such as Telephony DIM MILLIMETERS Low Current(Max. 600mA) A 4.70 MAXEB 4.80 MAXG High Voltage(Max.160v) C 3.70 MAXDD 0.55 MAX E 1.00F 1.27G 0.85H 0.45_MAXIMUM RATINGS (Ta=25 unless otherwise noted) HJ 14.00 0.50+L 2.30F FM 0.51 MAXSymbol Pa

 0.156. Size:1268K  jsmsemi
mmbt5401.pdf

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MMBT5401PNP General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary NPN type available(MMBT5551). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specifiedSymbol Parameter Value UNITV collector-base voltage -160 V CBO V

 0.157. Size:540K  mdd
mmbt5401.pdf

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MMBT5401TRANSISTOR(PNP)FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching SOT-23 Plastic PackageMARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.6 A PC Collector Pow

 0.158. Size:4192K  msksemi
mmbt5401-ms.pdf

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www.msksemi.comMMBT5401-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (PNP)FEATURES Complementary to MMBT5551-MS Ideal for Medium Power Amplification and Switching1. BASEMARKING: 2L 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emit

 0.159. Size:434K  powersilicon
mmbt5401-t3 mmbt5401g-t3.pdf

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MMBT5401GENERAL PURPOSE TRANSISTORS PNP Silicon FEATURES High DC Current Gain Low Collector-Emitter Saturation Voltage C MECHANICAL DATA E Available in SOT-23Package Solderability: MIL-STD-202, Method 208 PB Free Products Are Available: 98.5% SN B Above Can Meet RoHS Environment Substance Directive Request ORDERING INFORMATION PART NUMBER PA

 0.160. Size:1397K  pjsemi
mmbt5401.pdf

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MMBT5401 PNP Transistor Features For High Voltage Amplifer Applications. Silicon Epitaxial Chip.SOT-23 (TO-236) 1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings (T = 25) AParameter Symbol Value Unit Collector Base Voltage -VCBO 160 V Collector Emitter Voltage -VCEO 150 V Emitter Base Voltage -VEBO 5 V Collector Current -I 600 mA CPower Dissipation P

 0.161. Size:920K  cn salltech
mmbt5401-l mmbt5401-h.pdf

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5401

 0.162. Size:786K  cn shandong jingdao microelectronics
mmbt5401-l mmbt5401-h.pdf

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Jingdao Microelectronics co.LTD MMBT5401MMBT5401SOT-23PNP TRANSISTOR3FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO -160 V2.EMITTER3.COLLECTORCollec

 0.163. Size:325K  cn shikues
sxt5401.pdf

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SXT5401High Voltage TransistorsSOT-89 DESCRIPTION & FEATURES High Collector Breakdown Voltage (VCBO=-160V, VCEO=-150V) (ICBO=-50nA(Max.), @VCB=-120V) Low Leakage Current VCE(sat)=-0.5V(Max.), @IC=-50mA, IB=-5mA Low Saturation Voltage Low NoiseNF=8bB(Max.) PIN ASSIGNMENTPIN NUMBER PIN NAME FUNCTION SOT-89 B 1 BASE C 2 COLLECTOR E 3 EMITTER DEVICE MA

 0.164. Size:1054K  cn shikues
mmbt5401.pdf

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5401

 0.165. Size:1770K  cn shikues
mmbt5401dw.pdf

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MMBT5401DW Descriptions Double silicon PNP transistor in a SOT-363 Plastic Package. Features High voltage, complementary Pair with MMBT5551DW. Applications General purpose high voltage amplifier. Equivalent Circuit PinningPIN 14Emitter PIN 25Base PIN 36Collector hFE Classifications & Marking See Marking Instructions. REV.081 of 6MMB

 0.166. Size:275K  wpmtek
mmbt5401.pdf

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Integrated inOVP&OCP productsprovider MMBT5401 TRANSISTOR (PNP)FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emit

 0.167. Size:498K  cn yfw
mmbt5401 mmbt5401-l mmbt5401-h.pdf

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MMBT5401 SOT-23 PNP Transistors321.BaseFeatures 2.Emitter1 3.Collector High Voltage TransistorsPb-Free Packages are Available Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector-base voltage VCBO -160 VCollector-emitter voltage VCEO -150 VEmitter-base voltage VEBO -5 VCollector current-continuous IC -0.6 ACollector P

 0.168. Size:940K  cn yongyutai
mmbt5401.pdf

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MMBT5401 MMBT5401 TRANSISTOR (PNP) FEATURES Complimentary to MMBT5551 MARKING:2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -160 V VCEO Collector-Emitter Voltage - -150 V VEBO Emitter-Base Vo

 0.169. Size:959K  cn zre
mmbt5401l mmbt5401h.pdf

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MMBT5401 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT5551 ; Complementary to MMBT5551 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Pack

 0.170. Size:1740K  cn twgmc
mmbt5401.pdf

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MMBT3904MMBT5401AO3400SI2305MMBT5401 TRANSISTOR (PNP) FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching SOT-23 1BASE 2EMITTER MARKING: 2L 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 VVCEO Collector-Emitter Voltage -150 VVEBO Emitter-Base Vo

 0.171. Size:358K  cn tech public
tpao5401el.pdf

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WWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TW

 0.172. Size:367K  cn yangzhou yangjie elec
mmdt5401.pdf

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RoHS COMPLIANT MMDT5401Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K4M Equivalent circuit 1 / 5 S-S3208 Yangzhou

 0.173. Size:287K  cn yangzhou yangjie elec
mmbt5401q.pdf

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RoHS RoHSCOMPLIANT COMPLIANTMMBT5401Q PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solderable per J-

 0.174. Size:362K  cn yangzhou yangjie elec
mmbt5401.pdf

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RoHS COMPLIANT MMBT5401 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking:2L Maximum Rantings (Ta=25) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=-1.0mAdc, IB=0 -160 Collector-Base Voltage VCBO V IC=-100uAdc, IE=0 -180 Emitter-Base Voltage VEBO V IE=-10uAdc, IC

 0.175. Size:322K  cn yangzhou yangjie elec
mmst5401.pdf

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RoHS COMPLIANT MMST5401 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 Marking:K4M Maximum Rantings (Ta=25) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=-1.0mAdc, IB=0 -150 Collector-Base Voltage VCBO

 0.176. Size:1003K  cn doeshare
mmbt5401.pdf

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MMBT5401 MMBT5401 SOT-23 Plastic-Encapsulate Transistors(PNP) General description SOT-23 Plastic-Encapsulate Transistors(PNP) FEATURES Complementary to MMBT5551 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT5401 2L . Maximum Ra

 0.177. Size:1319K  cn cbi
mmdt5401dw.pdf

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Plastic-Encapsulate TransistorsSOT-363DUAL TRANSISTOR (PNP+PNP) FEATURES Complementary to MMDT5551DW Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING:2L MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -160 V CBOV Collector-Emitter Voltage -150 V CEOV Emitter-Base Vo

 0.178. Size:610K  cn cbi
mmbt5401t.pdf

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SOT-523 Plastic-Encapsulate TransistorsTRANSISTOR ( PNP)MMBT5401TSOT523FEATURES Complementary to MMBT5551W Small Surface Mount Package Ideal for Medium Power Amplificationand SwitchingMARKING:K4M1. BASE2. EMITTERMAXIMUM RATINGS (T =25 unless otherwise noted)a3. COLLECTORSymbol Parameter Value UnitVCBO Collector-Base Voltage -160 VVCEO Collector-Emi

 0.179. Size:257K  cn cbi
mmbt5401.pdf

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MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Curren

 0.180. Size:1087K  cn cbi
2n5401u.pdf

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Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURE Switching and amplification in high voltage Applications such as telephony Low current(max. 500mA) High voltage(max.160v) MARKING: 5401MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Volta

 0.181. Size:470K  cn fh
fht5401-me.pdf

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FHT5401-MEPNP Transistor DESCRIPTIONSSOT-23 PNP PNP transistor in a SOT-23 Plastic Package. APPLICATIONSGeneral purpose application,switching. PIN ASSIGNMENT1 BASE2 EMITTER3 COLLECTOR Equivalent Circuit Name rule Name Additiona

 0.182. Size:799K  cn fosan
mmbt5401.pdf

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ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT5401FEATURES PNP High Voltage TransistorMAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageV -150 VdcCEO-Collector-Base VoltageV -160 VdcCBO-Emitte

 0.183. Size:2016K  cn goodwork
mmbt5401.pdf

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MMBT5401PNP GENERAL PURPOSE SWITCHING TRANSISTORVOLTAGE -150Volts POWER 300mWattsFEATURESPNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-150V.Collector current IC=-0.6A.ansition frequency fT>100MHz @ IC=-Tr20mAdc, VCE=-6Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminal

 0.184. Size:722K  cn hottech
mmbt5401.pdf

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MMBT5401BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symb

 0.185. Size:554K  cn idchip
mmbt5401.pdf

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PNP MMBT5401MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter V

 0.186. Size:255K  cn haohai electr
hmbt5401.pdf

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HMBT5401PNP-TRANSISTOR-500mA,-150V PNP PNP High Voltage Transistor SMDHMBT5401HMBT5401LT1Complementary to HMBT5551PNP, BECTransistor Polarity: PNPGeneral Purpose TransistorsTransistor pinout: BECSOT-23 PackageMMBT5401Marking Code:

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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