All Transistors. 2SC1815-MS Datasheet

 

2SC1815-MS Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC1815-MS
   SMD Transistor Code: HF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT23

 2SC1815-MS Transistor Equivalent Substitute - Cross-Reference Search

   

2SC1815-MS Datasheet (PDF)

 ..1. Size:4258K  msksemi
2sc1815-ms.pdf

2SC1815-MS
2SC1815-MS

www.msksemi.com2SC1815-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES Power dissipation 1. BASEMARKING : HF 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOVCEO Collector-Emitter Voltage 50 V V Emitter-Base Voltage 5 V EBOI Collector Cur

 5.1. Size:168K  microelectronics
2sc1815-m.pdf

2SC1815-MS
2SC1815-MS

 6.1. Size:213K  toshiba
2sc1815-t.pdf

2SC1815-MS
2SC1815-MS

 6.2. Size:272K  toshiba
2sc1815-o 2sc1815-y 2sc1815-gr 2sc1815-bl.pdf

2SC1815-MS
2SC1815-MS

2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mmDriver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

 6.3. Size:368K  mcc
2sc1815-bl-gr-o-y.pdf

2SC1815-MS
2SC1815-MS

2SC1815-OMCC2SC1815-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC1815-GRCA 91311Phone: (818) 701-49332SC1815-BLFax: (818) 701-4939Features 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF NPN SiliconAmplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.Epitaxial

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SC4115S-Q

 

 
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