MMBT5551-MS Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBT5551-MS
SMD Transistor Code: G1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-23
MMBT5551-MS Transistor Equivalent Substitute - Cross-Reference Search
MMBT5551-MS Datasheet (PDF)
mmbt5551-ms.pdf
www.msksemi.comMMBT5551-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)FEATURES Complementary to MMBT5401-MS Ideal for Medium Power Amplification and Switching1. BASE2. EMITTERMARKING: G1SOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Volt
mmbt5551-l mmbt5551-h.pdf
Jingdao Microelectronics co.LTD MMBT5551MMBT5551SOT-23NPN TRANSISTOR3FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 180 V2.EMITTERCollectorEmitter V
mmbt5551-l mmbt5551-h.pdf
MMBT5551TRANSISTOR(NPN)SOT-23 Plastic-Encapsulate TransistorsSOT-23 Features Complementary to MMBT5401 300mW; Power Dissipation of 300mW High Stability and High ReliabilityMechanical Data SOT-23 Small Outline Plastic Package UL Epoxy UL: 94V-0 Mounting Position: AnyMarking: G1Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unl
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
