MMBTA92-MS Datasheet and Replacement

www.msksemi.comMMBTA92-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP) FEATURES High voltage transistor 1. BASE2. EMITTERSOT23 MARKING:2D3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collecto

MMBTA92-AUPNP HIGH VOLTAGE TRANSISTORSOT-23 Unit : inch(mm) VOLTAGE 300 Volt POWER 250 mWattFEATURES PNP silicon, planar design High voltage (max. 300V) Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard AEC-Q101 qualifiedMECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026

General Purpose TransistorMMBTA92-G (PNP)RoHS DeviceFeaturesSOT-230.119(3.00) -High voltage transistor.0.110(2.80)30.056(1.40)0.047(1.20)Diagram:1 20.079(2.00)Collector0.071(1.80)30.006(0.15)0.003(0.08)10.041(1.05) 0.100(2.550)Base0.035(0.90) 0.089(2.250)20.004(0.10) maxEmitter0.020(0.50)0.020(0.50) 0.012(0.30)0.012(0.30) Dimensions in

MMBTA92 SOT-23 PNP Transistors32 1.Base Features2.Emitter1 3.Collector High voltage transistor Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA42 (NPN) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Collector - Emitter Voltage VCEO -300 V Emitter