2SCR293P5 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SCR293P5
SMD Transistor Code: NV
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 320(typ) MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 270
Noise Figure, dB: -
Package: SOT89
2SCR293P5 Transistor Equivalent Substitute - Cross-Reference Search
2SCR293P5 Datasheet (PDF)
2scr293p5.pdf
2SCR293P5DatasheetMiddle Power Transistors (30V / 1A)lOutlinel SOT-89 Parameter Value SC-62 VCEO30VIC1AMPT3lFeatures lInner circuitl l1) Suitable for Middle Power Driver.2) Complementary PNP Types : 2SAR293P5.3) Low VCE(sat)VCE(sat)=350mV(Max.).(IC/IB=500mA/25mA)lApplicationlLOW FREQUENCY AMPLIFIER,
2scr293pfra.pdf
2SCR293P2SCR293PFRADatasheetNPN 1.0A 30V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO30VBase Collector IC1.0AEmitter 2SCR293PFRA2SAR293P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR293P2SAR293PFRA3) Low VCE(sat)VCE(sat)=0.35V(Max.)(IC/IB=500mA/25mA)4) Lead Free/RoHS
2scr293p.pdf
Midium Power Transistors (30V / 1A) 2SCR293P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorMPT3(SC-63) FeaturesLow saturation voltageVCE (sat) = 0.35V (Max.) (IC / IB= 500mA / 25mA)(1) (2) (3)(1) Base Applications(2) CollectorAbbreviated symbol : NV(3) EmitterDriver Packaging specifications Inner circuit (U
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
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