2SCR573D3
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SCR573D3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 320(typ)
MHz
Collector Capacitance (Cc): 20
pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package:
TO252
2SCR573D3
Transistor Equivalent Substitute - Cross-Reference Search
2SCR573D3
Datasheet (PDF)
..1. Size:1681K rohm
2scr573d3.pdf
2SCR573D3DatasheetNPN 3.0A 50V Power TransistorlOutlinel Parameter Value DPAK VCEO50VIC3ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR573D3.3) Low VCE(sat)VCE(sat)=350mV(Max.).(IC/IB=1A/50mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificatio
6.1. Size:792K rohm
2scr573d.pdf
2SCR573DDatasheetNPN 3.0A 50V Middle Power TransistorlOutlinelParameter Value CPTVCEO50VIC3A 2SCR573D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR573D.3) Low VCE(sat)VCE(sat)=0.35V(Max.).(IC/IB=1A/50mA)4) Lead Free/Ro
6.2. Size:796K rohm
2scr573da08.pdf
2SCR573D A08DatasheetNPN 3.0A 50V Middle Power TransistorlOutlinelParameter Value CPTVCEO50VIC3A 2SCR573D A08 lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR573D.3) Low VCE(sat)VCE(sat)=0.35V(Max.).(IC/IB=1A/50mA)4) Lead
6.3. Size:213K inchange semiconductor
2scr573d.pdf
isc Silicon NPN Power Transistor 2SCR573DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V =0.35V@(I =1A,I =50mA)CE(sat) C BComplementary NPN types:2SAR573D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
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