S9012L Datasheet and Replacement

RUMW UMW S9012SOT-23 Plastic-Encapsulate TransistorsS9012 TRANSISTOR (PNP) SOT-23 FEATURES High Collector Current Complementary To S90131. BASE Excellent hFE Linearity 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO

S9012S9012S9012S9012S9 0 12 TRANSISTOR(PNP)FEATURES High Collector Current SOT-23 Complementary To S9013 Excellent hFE Linearity 1BASE 2EMITTER MARKING: 2T1 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base VoltageVCEO -25 VCollector-Emitter VoltageVEBO Emitter-Base Voltage -5

S9012LT1PNP General Purpose Transistors3P b Lead(Pb)-Free 12SOT-23ValueVCEO -20-40-5-5003002.4417S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R S9012SLT1=12S-0.1-20-100 -40-5.0-100u-0.15-35-0.15 u-4.0WEITRON1/2 28-Apr-2011http://www.weitron.com.twS9012LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)Characterist

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 1. BASE S9012LT1 TRANSISTOR (PNP) 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range Unit: mm TJ, Tst

Bruckewell Technology Corp., Ltd. PNP EPITAXIAL SILICON TRANSISTOR S9012LT FEATURES Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V ,Ic=400m High Total Power Dissipation: Pc=225mW MECHANICAL DATA * Case: SOT-23 Molded plastic * Epoxy: UL94V-O rate flame retardant SOT-23 Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Ratings (T