All Transistors. 2SD1624-T Datasheet

 

2SD1624-T Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1624-T
   SMD Transistor Code: DGT*
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150(typ) MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT89

 2SD1624-T Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1624-T Datasheet (PDF)

 ..1. Size:1317K  slkor
2sd1624-r 2sd1624-s 2sd1624-t 2sd1624-u.pdf

2SD1624-T 2SD1624-T

2SD1624 Features1.70 0.1 Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SB1124 0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60Collector - Emitter Voltage VCEO 50 VEmitter - Base Volta

 7.1. Size:143K  sanyo
2sd1624.pdf

2SD1624-T 2SD1624-T

Ordering number:2019APNP/NPN Epitaxial Planar Silicon Transistors2SB1124/2SD1624High Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2038[2SB1124/2SD1624]Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed.

 7.2. Size:108K  sanyo
2sb1124 2sd1624.pdf

2SD1624-T 2SD1624-T

Ordering number:ENN2019APNP/NPN Epitaxial Planar Silicon Transistors2SB1124/2SD1624High Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2038A[2SB1124/2SD1624]Features4.51.51.6 Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast swi

 7.3. Size:357K  onsemi
2sb1124 2sd1624.pdf

2SD1624-T 2SD1624-T

Ordering number : EN2019B2SB1124/2SD1624Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 3A, Low VCE sat , PNP NPN Single PCPApplications Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Fast switching speed Large current capacity and wide

 7.4. Size:243K  utc
2sd1624.pdf

2SD1624-T 2SD1624-T

UNISONIC TECHNOLOGIES CO., LTD 2SD1624 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Low collector-to-emitter saturation voltage * Fast switching speed. * Large current capacity and wide ASO

 7.5. Size:1172K  kexin
2sd1624.pdf

2SD1624-T 2SD1624-T

SMD Type TransistorsNPN Transistors2SD1624 Features1.70 0.1 Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SB1124 0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Em

 7.6. Size:1360K  cn shikues
2sd1624r 2sd1624s 2sd1624t 2sd1624u.pdf

2SD1624-T 2SD1624-T

 7.7. Size:208K  inchange semiconductor
2sd1624.pdf

2SD1624-T 2SD1624-T

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1624DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOFast switching speed100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for L Amp Electronic Governor applications.FABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , A1941 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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