S9012-J Datasheet. Specs and Replacement

Type Designator: S9012-J  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: SOT23

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S9012-J datasheet

 ..1. Size:303K  slkor

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S9012-J

S9012 PNP Silicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= -500mA Complementary To S9013. Excellent HFE Linearity. APPLICATIONS High Collector Current. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEB... See More ⇒

 ..2. Size:1158K  cn evvo

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S9012-J

S9012 PNP Transistors 3 2 1.Base 2.Emitter Features 1 3.Collector Excellent hFE liearity Simplified outline(SOT-23) Collector Current IC=-0.5A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -5 V Collector Current to Continuous IC -500 mA Collector Power Dis... See More ⇒

 ..3. Size:825K  cn salltech

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S9012-J

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 ..4. Size:786K  cn shandong jingdao microelectronics

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S9012-J

Jingdao Microelectronics co.LTD S9012 General Purpose Transistor PNP Silicon FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity SOT-23 3 COLLECTOOR 3 1 DEVICE MARKING BASE S9012 = 2T1 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO -25 Vdc ... See More ⇒

Detailed specifications: S8050TJ, S8050TL, S8050W-H, S8050W-J, S8050W-L, S8550-H, S8550-L, S9012-H, 2N2907, S9012-L, S9013D, S9013E, S9013F, S9013J, S9014H, S9014L, S9014W-H

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