2SA2198 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA2198
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 25(typ) MHz
Collector Capacitance (Cc): 400 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3PML
2SA2198 Transistor Equivalent Substitute - Cross-Reference Search
2SA2198 Datasheet (PDF)
2sa2198.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA2198DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -5ACE(sat) CGood Linearity of hFEAPPLICATIONSDesigned for chopper regulator, switch and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -70 VCBOV Collector-E
2sa2190.pdf
2SA2190 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor Type 2SA2190 Unit: mmPower Amplifier Applications Driver Stage Amplifier Applications High transition frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO - 180 VCollector-emitter voltage VCEO - 180 VEmitter-base voltage VEBO -
2sa2195.pdf
2SA2195 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2195 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) 1 High-speed switching: tf = 90 ns (typ.) 2 3Absolute Maximum Ratings
2sa2199.pdf
2SA2199 Transistors General Purpose Transistor (-50V, -100mA) 2SA2199 Applications Dimensions (Unit : mm) Small signal low frequency amplifier VMN3 Features 0.220.161) Excellent hFE linearity. (3)2) Complements the 2SC6114. Structure (1) (2)PNP silicon epitaxial 0.370.170.35planar transistor 0.6(1) Base(2) EmitterAbbreviated symbol : P (3) C
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N3123 | FJP13007H2TU-F080
History: 2N3123 | FJP13007H2TU-F080
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