2SA2198 Specs and Replacement

Type Designator: 2SA2198

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 25 typ MHz

Collector Capacitance (Cc): 400 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO3PML

 2SA2198 Substitution

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2SA2198 datasheet

 ..1. Size:502K  cn sptech

2sa2198.pdf pdf_icon

2SA2198

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA2198 DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -5A CE(sat) C Good Linearity of h FE APPLICATIONS Designed for chopper regulator, switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -70 V CBO V Collector-E... See More ⇒

 8.1. Size:184K  toshiba

2sa2190.pdf pdf_icon

2SA2198

2SA2190 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor Type 2SA2190 Unit mm Power Amplifier Applications Driver Stage Amplifier Applications High transition frequency fT = 200 MHz (typ.) Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO - 180 V Collector-emitter voltage VCEO - 180 V Emitter-base voltage VEBO -... See More ⇒

 8.2. Size:126K  toshiba

2sa2195.pdf pdf_icon

2SA2198

2SA2195 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2195 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 High DC current gain hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage VCE (sat) = -0.2 V (max) 1 High-speed switching tf = 90 ns (typ.) 2 3 Absolute Maximum Ratings ... See More ⇒

 8.3. Size:81K  rohm

2sa2199.pdf pdf_icon

2SA2198

2SA2199 Transistors General Purpose Transistor (-50V, -100mA) 2SA2199 Applications Dimensions (Unit mm) Small signal low frequency amplifier VMN3 Features 0.22 0.16 1) Excellent hFE linearity. (3) 2) Complements the 2SC6114. Structure (1) (2) PNP silicon epitaxial 0.37 0.17 0.35 planar transistor 0.6 (1) Base (2) Emitter Abbreviated symbol P (3) C... See More ⇒

Detailed specifications: 2SA1758E, 2SA1758F, 2SA1940O, 2SA1940R, 2SA1941O, 2SA1941R, 2SA1943O, 2SA1943R, A940, 2SC2334K, 2SC2334L, 2SC2334M, 2SC2517K, 2SC2517L, 2SC2517M, 2SC3157K, 2SC3157L

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