2SD1047D PDF and Equivalents Search

 ..1. Size:178K  cn sptech

 2sd1047d 2sd1047e.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD1047 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817 APPLICATIONS Recommend for 60W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒

 7.1. Size:185K  st

 2sd1047.pdf

2SD1047 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 140 V Typical ft = 20 MHz Fully characterized at 125 oC Application Power supply 3 2 1 Description TO-3P The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain line... See More ⇒

 7.2. Size:30K  sanyo

 2sb817p 2sd1047p 2sd1047p.pdf

Ordering number ENN6572 2SB817P / 2SD1047P 2SB817P PNP Epitaxial Planar Silicon Transistor 2SD1047P NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P... See More ⇒

 7.3. Size:125K  sanyo

 2sd1047 2sd1047e.pdf

Ordering number 680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817/2SD1047] Wide ASO because of on-chip ballast re... See More ⇒

 7.4. Size:445K  sanken-ele

 2sb817c 2sd1047c.pdf

Ordering number ENN6987 2SB817C/2SD1047C PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SB817C/2SD1047C 140V / 12A, AF 80W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SB817C/2SD1047C] 15.6 3.2 4.8 14.0 2.0... See More ⇒

 7.5. Size:206K  inchange semiconductor

 2sd1047e.pdf

isc Product Specification isc Silicon NPN Power Transistor 2SD1047E DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817E Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency a... See More ⇒

 7.6. Size:360K  inchange semiconductor

 2sd1047-247.pdf

isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION Collector-Emitter Breakdown Voltage V = 140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Recommend for 60W audio frequency amplifier output stage ap... See More ⇒

 7.7. Size:218K  inchange semiconductor

 2sd1047.pdf

isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Recommend for 60W audio frequency amplifier output stage a... See More ⇒