MJW0302G PDF and Equivalents Search

 ..1. Size:969K  cn sptech

 mjw0302g.pdf

SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJW0302G DESCRIPTION High Collector-Emitter Breakdown Voltage- V =250V(Min) (BR)CEO Good Linearity of h FE Complement to Type NJW0281G APPLICATIONS Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol... See More ⇒

 7.1. Size:67K  onsemi

 mjw0281a mjw0302a.pdf

MJW0281A (NPN) MJW0302A (PNP) Preferred Devices Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW3281A and MJW1302A audio output transistors. With superior gain linearity and safe operating area performance, these http //onsemi.com transistors are ideal for high fidelity audio amplifier output stages and other linea... See More ⇒

 7.2. Size:1718K  cn sps

 mjw0302at4tl.pdf

MJW0302AT4TL DESCRIPTION High DC current amplifier rate h 50-200@V = 5V,I = 1A FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -250 V CBO V Collector-Emitter ... See More ⇒

 7.3. Size:862K  cn sptech

 mjw0302a.pdf

SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJW0302A DESCRIPTION High DC current amplifier rate h 50-200@V = 5V,I = 1A FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒