ST13003-K Datasheet and Replacement

ST13003-KHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Very high switching speedApplications12 Electronic ballast for fluorescent lighting (CFL)3 SMPS for battery chargerSOT-32DescriptionThe device is manufactured using high voltage Figure 1. Internal schematic diagrammulti-epitaxi

ST13003, ST13003-KHigh voltage fast-switching NPN power transistorDatasheet - production dataFeatures High voltage capability Low spread of dynamic parameters Very high switching speedApplications32 Electronic ballast for fluorescent lighting (CFL)1 SMPS for battery chargerSOT-32DescriptionFigure 1. Internal schematic diagramThe device is manufact

ST13003D-KHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode123ApplicationsSOT-32 Electronic ballast for fluorescent lightingDescriptionFigure 1. Internal schemati

ST13003HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDAPPLICATIONS: ELECTRONIC BALLASTS FORFLUORESCENT LIGHTING12 SWITCH MODE POWER SUPPLIES3DESCRIPTIONSOT-32The device is manufactured using high voltageMulti Epitaxial Planar te

ST13003DNHigh voltage fast-switching NPN power transistorPreliminary dataFeatures High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode3Application 21 Compact fluorescent lamps (CFLs)SOT-32DescriptionThe device is manufactured using high voltage multi epitaxial planar technology for high swi

ST13003NHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Very high switching speedApplication32 Compact fluorescent lamps (CFLs)1SOT-32DescriptionThe device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a

ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 600 VCollector Emitter Voltage VCEO 400 VEmitter Base Voltage VEBO 9 VCo

ST 13003H NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications 1. Emitter 2. Collector 3. Base TO-92 Plastic PackageAbsolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Emitter Voltage VCES 900 VCollector Emitter Voltage VCEO 500 VEmitter Base Voltage VEBO 9 VCollector Current (f 100 Hz, Duty cycle 50 %)

ST 13002T / 13003T NPN Silicon Power Transistors E CB TO-126 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Emitter Voltage 13002T 300 VCEO(sus) V 13003T 400Collector Emitter Voltage 13002T 600 VCEV V 13003T 700 Emitter Base Voltage VEBO 9 VCollector Current IC 1.5 APeak Collector Current at t = 5 ms ICM 3 ABase C