2SC3835T4TL
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3835T4TL
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70
W
Maximum Collector-Base Voltage |Vcb|: 200
V
Maximum Collector-Emitter Voltage |Vce|: 120
V
Maximum Emitter-Base Voltage |Veb|: 8
V
Maximum Collector Current |Ic max|: 7
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 20
MHz
Collector Capacitance (Cc): 110
pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package:
TO3PN
2SC3835T4TL
Transistor Equivalent Substitute - Cross-Reference Search
2SC3835T4TL
Datasheet (PDF)
..1. Size:1285K cn sps
2sc3835t4tl.pdf
2SC3835T4TLSilicon NPN Power TransistorDESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I =3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec
7.1. Size:120K utc
2sc3835.pdf
UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. 1TO-3PN1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER SYMBOL RATING UNITCollector-Base Voltage VCBO 200 VCollector-Emitter Voltage VCEO 120 VEmitter-Base Voltage VEBO 8 VBase Current IB 3 ACollector Current 7 A
7.2. Size:117K jmnic
2sc3835.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistor 2SC3835 DESCRIPTION Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) Good Linearity of hFE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBO
7.3. Size:28K sanken-ele
2sc3835.pdf
2SC3835Silicon NPN Triple Diffused Planar Transistor (Switching Transistor)Application : Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol Ratings UnitUnit Symbol Conditions Ratings0.24.80.415.6VCBO 200 VCB=200V 100max A 0.1V ICBO9.6 2.0VCEO 120 IEBO
7.5. Size:222K inchange semiconductor
2sc3835.pdf
isc Silicon NPN Power Transistor 2SC3835DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I =3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose appl
7.6. Size:312K inchange semiconductor
2sc3835g.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G DESCRIPTION Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) Good Linearity of hFEAPPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS
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