All Transistors. BU941PT4TL Datasheet

 

BU941PT4TL Datasheet, Equivalent, Cross Reference Search


   Type Designator: BU941PT4TL
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 155 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: TO3PN

 BU941PT4TL Transistor Equivalent Substitute - Cross-Reference Search

   

BU941PT4TL Datasheet (PDF)

 ..1. Size:1286K  cn sps
bu941pt4tl.pdf

BU941PT4TL
BU941PT4TL

BU941PT4TLSilicon NPN Power TransistorDESCRIPTIONHigh VoltageDARLINGTONAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (TB B=25)aSYMBOL PARAMETER VALUE UNITVB B Collector-Base Voltage 500 VCBOVB B Collector-Emitter Voltage 400 VCEOVB B Emitter-Base Voltage 5 VEBOIB B Collector Current- Continu

 8.1. Size:101K  st
bu941p.pdf

BU941PT4TL
BU941PT4TL

BU941/BU941PBU941PFIHIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODETO-3 VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION1TEMPERATURE2 WIDE RANGE OF PACKAGESAPPLICATIONS HIGH RUGGEDNESS ELECTRONICIGNITIONS33221 1TO-218 ISOWATT218INTERNAL SCHEMA

 8.2. Size:41K  jmnic
bu941p.pdf

BU941PT4TL
BU941PT4TL

Product Specification www.jmnic.com Silicon NPN Power Transistors BU941P DESCRIPTION With TO-3PN package DARLINGTON High breakdown voltage APPLICATIONS High ruggedness electronic ignitions. High voltage ignition coil driver PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbso

 8.3. Size:190K  cn sptech
bu941p.pdf

BU941PT4TL
BU941PT4TL

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor BU941PDESCRIPTIONHigh VoltageDARLINGTONAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (TB B=25)aSYMBOL PARAMETER VALUE UNITVB B Collector-Base Voltage 500 VCBOVB B Collector-Emitter Voltage 400 VCEOVB B Emitter-Base Voltage 5 VEBO

 8.4. Size:221K  inchange semiconductor
bu941p.pdf

BU941PT4TL
BU941PT4TL

isc Silicon NPN Power Transistor BU941PDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (TB B=25)aSYMBOL PARAMETER VALUE UNITVB B Collector-Base Voltage 500 VCBOVB B Collector-Emitter Voltage 400 V

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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