CD568B Specs and Replacement
Type Designator: CD568B
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.8 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 55
Package: TO220C
CD568B Substitution
- BJT ⓘ Cross-Reference Search
CD568B datasheet
isc Silicon PNP Power Transistor CD568B DESCRIPTION Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -200 V CBO V Collector-Emitter Voltage -150 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current-Continuous -1 A C Collector Power Dissipation P 1.8 W ... See More ⇒
Detailed specifications: MJW0302AT4TL, MJW3281AT4TL, NJW0281GT4TL, NJW0302GT4TL, NJW1302GT4TL, NJW3281GT4TL, TIP35CT4TL, TIP36CT4TL, A940, ISCE1938P, ISCN440P, ISCND436D, 2SC2222H, BC807-16W-AU, BC807-25W-AU, BC807-40W-AU, BC817-16-AU
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