ISCE1938P Specs and Replacement

Type Designator: ISCE1938P

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 typ MHz

Collector Capacitance (Cc): 55 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO126

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ISCE1938P datasheet

 ..1. Size:255K  inchange semiconductor

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ISCE1938P

isc Silicon PNP Power Transistor ISCE1938P DESCRIPTION High Collector Current -I = -3A C High Collector-Emitter Breakdown Voltage- V = -30V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in the output stage of 3 watts audio amp- lifier, voltage... See More ⇒

Detailed specifications: MJW3281AT4TL, NJW0281GT4TL, NJW0302GT4TL, NJW1302GT4TL, NJW3281GT4TL, TIP35CT4TL, TIP36CT4TL, CD568B, B772, ISCN440P, ISCND436D, 2SC2222H, BC807-16W-AU, BC807-25W-AU, BC807-40W-AU, BC817-16-AU, BC817-25-AU

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