2SB772SQ-E Specs and Replacement
Type Designator: 2SB772SQ-E
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 typ MHz
Collector Capacitance (Cc): 55 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT89
2SB772SQ-E Substitution
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2SB772SQ-E datasheet
2sb772sq-r 2sb772sq-q 2sb772sq-p 2sb772sq-e.pdf 
2SB772SQ Silicon PNP Power Transistor Features High current output up to 3A Low saturation voltage Complement to 2SD882SQ SOT-89 PIN1 Base PIN 2 Collector PIN 3 Emitter Applications These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter Symbo... See More ⇒
2SB772SQ Silicon PNP Power Transistor Features High current output up to 3A Low saturation voltage Complement to 2SD882SQ SOT-89 PIN1 Base PIN 2 Collector PIN 3 Emitter Applications These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter Symbol... See More ⇒
Detailed specifications: 2SA1213SQ-O, 2SA1213SQ-Y, 2SB1132SQ-P, 2SB1132SQ-Q, 2SB1132SQ-R, 2SB1188SQ-P, 2SB1188SQ-Q, 2SB1188SQ-R, BD222, 2SB772SQ-P, 2SB772SQ-Q, 2SB772SQ-R, 2SC2873SQ-O, 2SC2873SQ-Y, 2SD882SQ-E, 2SD882SQ-P, 2SD882SQ-Q
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