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2SB772SQ-R Specs and Replacement


   Type Designator: 2SB772SQ-R
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100(typ) MHz
   Collector Capacitance (Cc): 55 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT89

 2SB772SQ-R Transistor Equivalent Substitute - Cross-Reference Search

   

2SB772SQ-R detailed specifications

 ..1. Size:242K  pjsemi
 2sb772sq-r 2sb772sq-q 2sb772sq-p 2sb772sq-e.pdf pdf_icon

2SB772SQ-R

2SB772SQ Silicon PNP Power Transistor Features High current output up to 3A Low saturation voltage Complement to 2SD882SQ SOT-89 PIN1 Base PIN 2 Collector PIN 3 Emitter Applications These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter Symbo... See More ⇒

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2SB772SQ-R

2SB772SQ Silicon PNP Power Transistor Features High current output up to 3A Low saturation voltage Complement to 2SD882SQ SOT-89 PIN1 Base PIN 2 Collector PIN 3 Emitter Applications These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter Symbol... See More ⇒

 7.1. Size:257K  utc
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2SB772SQ-R

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2SB772SQ-R

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Detailed specifications: 2SB1132SQ-Q , 2SB1132SQ-R , 2SB1188SQ-P , 2SB1188SQ-Q , 2SB1188SQ-R , 2SB772SQ-E , 2SB772SQ-P , 2SB772SQ-Q , TIP41C , 2SC2873SQ-O , 2SC2873SQ-Y , 2SD882SQ-E , 2SD882SQ-P , 2SD882SQ-Q , 2SD882SQ-R , 2SD965ASQ-Q , 2SD965ASQ-R .

Keywords - 2SB772SQ-R transistor specs

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