All Transistors. 2SD965ASQ-Q Datasheet

 

2SD965ASQ-Q Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD965ASQ-Q
   SMD Transistor Code: AQ
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150(typ) MHz
   Collector Capacitance (Cc): 50(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 230
   Noise Figure, dB: -
   Package: SOT89

 2SD965ASQ-Q Transistor Equivalent Substitute - Cross-Reference Search

   

2SD965ASQ-Q Datasheet (PDF)

 ..1. Size:767K  pjsemi
2sd965asq-q 2sd965asq-r 2sd965asq-s.pdf

2SD965ASQ-Q
2SD965ASQ-Q

2SD965ASQ NPN Transistor Features SOT-89 Low saturation voltage Large Collector Power Dissipation and Current1. Base 2. Collector 3.EmitterMarking: Q: AQR:ARS:ASAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40 V CBOCollector Emitter Voltage V 30 V CEOUnitEm

 7.1. Size:229K  utc
2sd965 2sd965a.pdf

2SD965ASQ-Q
2SD965ASQ-Q

UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Ordering Number Pin Assi

 7.2. Size:101K  secos
2sd965a.pdf

2SD965ASQ-Q
2SD965ASQ-Q

2SD965A 5 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Audio amplifier 1 Flasg unit of camera 23A Switching circuit ECB C E B DCLASSIFICATION OF hFE(2) Rank Q R SF G230 - 380 Range 340 - 600 560 - 800 H KJ LMilli

 7.3. Size:335K  jiangsu
2sd965a.pdf

2SD965ASQ-Q

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier Flash unit of camera 3. EMITTER Switching circuit MARKING: 965AMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 VCollector-

 7.4. Size:555K  htsemi
2sd965a.pdf

2SD965ASQ-Q
2SD965ASQ-Q

2SD 965ATRANSISTOR (NPN) FEATURES SOT-89 Audio amplifier Flash unit of camera 1. BASE Switching circuit MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units 2 3. EMITTER VCBO Collector-Base Voltage 40 V3Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 7 VIC Collector Current -Continuous 5 AC

 7.5. Size:206K  lge
2sd965a.pdf

2SD965ASQ-Q
2SD965ASQ-Q

2SD965A SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.62 1.81.41.43. EMITTER 32.64.252.43.75Features 0.8 Audio amplifier MIN0.530.400.480.44 Flash unit of camera 2x)0.13 B0.35 0.371.5 Switching circuit 3.0Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

 7.6. Size:250K  shenzhen
2sd965a.pdf

2SD965ASQ-Q
2SD965ASQ-Q

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier 1 Flash unit of camera 2 3. EMITTER Switching circuit 3MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO 40 VCollector-Emitter V

 7.7. Size:321K  kexin
2sd965a.pdf

2SD965ASQ-Q

SMD Type TransistorsNPN Transistors2SD965A1.70 0.1 Features Audio amplifier Flash unit of camera Switching circuit0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 7 Collector Current - C

 7.8. Size:3220K  slkor
2sd965a-q 2sd965a-r 2sd965a-s.pdf

2SD965ASQ-Q
2SD965ASQ-Q

2SD965ANPN Transistors3 Features2 Low saturation voltage1.Base1 Large Collector Power Dissipation and Current2.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 7 Collector Current - Contin

 7.9. Size:386K  powersilicon
2sd965 2sd965a.pdf

2SD965ASQ-Q
2SD965ASQ-Q

DATA SHEET 2SD965/965A NPN PLASTIC ENCAPSULATE TRANSISTORS VOLTAGE 20~30 V CURRENT 5 A FEATURES TO-92SOT-89 LOW VOLTAGE AND HIGH CURRENT EXCELLENT hFE CHARACTERISTICS COLLECTOR-EMITTER VOLTAGE 20V FOR 2SD965 COLLECTOR-EMITTER VOLTAGE 30V FOR 2SD965A LEAD FREE AND HALOGEN-FREE ECMECHANICAL DATA E C B B CASE: SOT-89, TO-92 SOLDERABILITY: MIL-STD-202,

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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