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MMBT8550-C Specs and Replacement


   Type Designator: MMBT8550-C
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100(typ) MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23

 MMBT8550-C Transistor Equivalent Substitute - Cross-Reference Search

   

MMBT8550-C detailed specifications

 ..1. Size:496K  pjsemi
mmbt8550-c mmbt8550-d.pdf pdf_icon

MMBT8550-C

MMBT8550 PNP Transistor Features SOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the NPN Transistor MMBT8050 is Recommended. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 40 V CBO Collector Emitter Voltage ... See More ⇒

 6.1. Size:814K  semtech
mmbt8550c mmbt8550d.pdf pdf_icon

MMBT8550-C

MMBT8550(1.5A) PNP Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN transistor MMBT8050 (1.5A) is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Bas... See More ⇒

 6.2. Size:332K  topdiode
mmbt8550.pdf pdf_icon

MMBT8550-C

Tel/Fax +86 (0)769 82827329 Skype topdiode Email info@topdiode.com Website www.topdiode.com Tel/Fax +86 (0)769 82827329 Skype topdiode Email info@topdiode.com Website www.topdiode.com ... See More ⇒

 6.3. Size:131K  wej
mmbt8550lt1.pdf pdf_icon

MMBT8550-C

RoHS MMBT8550LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 Complement to MMPT8050LT1 1. 1.BASE Collector-current Ic=-500mA 2.EMITTER High Total Power Dissipation Pc=225mW 2.4 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage ... See More ⇒

Detailed specifications: 2SD965ASQ-R , 2SD965ASQ-S , BCX53SQ-10 , BCX53SQ-16 , MMBT8050-C , MMBT8050C-1.5A , MMBT8050-D , MMBT8050D-1.5A , A1015 , MMBT8550-D , MMBT9012G , MMBT9012H , MMBT9013-G , MMBT9013-H , MMBT9015-B , MMBT9015-C , MMBT9015-D .

History: PN2221A | PN2907ATAR | PN2221R | MMBT8550-D

Keywords - MMBT8550-C transistor specs

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