MMBT9012G Specs and Replacement
Type Designator: MMBT9012G
SMD Transistor Code: K2
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100(typ) MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
MMBT9012G Transistor Equivalent Substitute - Cross-Reference Search
MMBT9012G detailed specifications
mmbt9012g mmbt9012h.pdf
MMBT9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O... See More ⇒
mmbt9012g mmbt9012h.pdf
MMBT9012 PNP Transistor Features SOT-23 For Switching and AF Amplifer Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code MMBT9012G K2 1.Base MMBT9012H K3 2. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 40 V CBO Collec... See More ⇒
mmbt9012g-d mmbt9012g-e mmbt9012g-f mmbt9012g-g mmbt9012g-h mmbt9012g-i.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBT9012 PNP SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 3 FEATURES 1 2 *High total power dissipation. (625mW) SOT-23 *High collector current. (-500mA) (JEDEC TO-236) *Excellent hFE linearity *Complementary to UTC MMBT9013 ORDERING INFORMATION Pin Assignment Ordering Number Package P... See More ⇒
mmbt9012.pdf
UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. (625mW) 1 *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 3 MARKING 12 SOT-23 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C, unless otherwise specifie... See More ⇒
Detailed specifications: BCX53SQ-10 , BCX53SQ-16 , MMBT8050-C , MMBT8050C-1.5A , MMBT8050-D , MMBT8050D-1.5A , MMBT8550-C , MMBT8550-D , BD140 , MMBT9012H , MMBT9013-G , MMBT9013-H , MMBT9015-B , MMBT9015-C , MMBT9015-D , MMBTSC1623-L4 , MMBTSC1623-L5 .
History: PN2221A | PN2907ATAR | PN2221AR | PN2221R | MMBT8550-D | MMBT8550-C
Keywords - MMBT9012G transistor specs
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History: PN2221A | PN2907ATAR | PN2221AR | PN2221R | MMBT8550-D | MMBT8550-C
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