All Transistors. MMBTSC3875-Y Datasheet

 

MMBTSC3875-Y Datasheet and Replacement


   Type Designator: MMBTSC3875-Y
   SMD Transistor Code: ALY
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 3.5(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT23
 

 MMBTSC3875-Y Substitution

   - BJT ⓘ Cross-Reference Search

   

MMBTSC3875-Y Datasheet (PDF)

 ..1. Size:508K  pjsemi
mmbtsc3875-o mmbtsc3875-y mmbtsc3875-g mmbtsc3875-l.pdf pdf_icon

MMBTSC3875-Y

MMBTSC3875NPN Transistor Features For Switching and AF Amplifier Applications.SOT-23 As Complementary Type of the PNP Transistor (TO-236) MMBTSA1504 is Recommended.1.Base 2.Emitter 3.CollectorMarking:MMBTSC3875O:ALOMMBTSC3875Y:ALYMMBTSC3875G:ALGMMBTSC3875L:ALLAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter

 7.1. Size:207K  semtech
mmbtsc3356q mmbtsc3356r mmbtsc3356s.pdf pdf_icon

MMBTSC3875-Y

MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 20 VCollector Emitter Voltage VCEO 12 VEmitter Base V

 7.2. Size:203K  cn cbi
mmbtsc3356.pdf pdf_icon

MMBTSC3875-Y

MMBTSC3356 NPN Silicon Epitaxial Planar Transistorfor microwave low noise amplifier at VHF,UHF and CATV bandThe transistor is subdivided into threegroups, Q, R and S, according to its DCcurrent gain.1.Base 2.Emitter 3.CollectorHFE MARKINGSOT-23 Plastic PackageQ R23R R24S R25OAbsolute Maximum Ratings (T = 25 C)aParameter Symbol Value UnitCollector Base Voltage VCB

 8.1. Size:282K  semtech
mmbtsc4098w.pdf pdf_icon

MMBTSC3875-Y

MMBTSC4098W NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 5 VCollector Current IC 50 mA Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C

Datasheet: MMBT9015-D , MMBTSC1623-L4 , MMBTSC1623-L5 , MMBTSC1623-L6 , MMBTSC1623-L7 , MMBTSC3875-G , MMBTSC3875-L , MMBTSC3875-O , 2SC4793 , MMBTSC945-H , MMBTSC945-L , MMDT2907ASG , MMDT3904SG , MMDT3906SG , MMBT3904H , MMBT3906H , 2SA1163BL .

History: FXT38CSM | MP8534 | 2N3996SMD05 | BFX87 | 2SD880O | RT1P231U

Keywords - MMBTSC3875-Y transistor datasheet

 MMBTSC3875-Y cross reference
 MMBTSC3875-Y equivalent finder
 MMBTSC3875-Y lookup
 MMBTSC3875-Y substitution
 MMBTSC3875-Y replacement

 

 
Back to Top

 


 
.