All Transistors. MMBTSC945-L Datasheet

 

MMBTSC945-L Datasheet and Replacement


   Type Designator: MMBTSC945-L
   SMD Transistor Code: CR
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 3(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 130
   Noise Figure, dB: -
   Package: SOT23
 

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MMBTSC945-L Datasheet (PDF)

 ..1. Size:710K  pjsemi
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MMBTSC945-L

MMBTSC945 NPN Transistor SOT-23 Features (TO-236) Excellent hFE Linearity Low noise1.Base 2.Emitter 3.CollectorMarking: CRAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBOCollector Emitter Voltage V 50 V CEOEmitter Base Voltage V 5 V EBOCollector Curr

 5.1. Size:130K  semtech
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MMBTSC945-L

MMBTSC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA733 is recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO

 8.1. Size:282K  semtech
mmbtsc4098w.pdf pdf_icon

MMBTSC945-L

MMBTSC4098W NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 5 VCollector Current IC 50 mA Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C

 8.2. Size:141K  semtech
mmbtsc1815o mmbtsc1815y mmbtsc1815g mmbtsc1815l.pdf pdf_icon

MMBTSC945-L

MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO

Datasheet: MMBTSC1623-L5 , MMBTSC1623-L6 , MMBTSC1623-L7 , MMBTSC3875-G , MMBTSC3875-L , MMBTSC3875-O , MMBTSC3875-Y , MMBTSC945-H , TIP31C , MMDT2907ASG , MMDT3904SG , MMDT3906SG , MMBT3904H , MMBT3906H , 2SA1163BL , 2SA1163GR , 2SA1213O .

History: 2SC369G | KRC854F | FCS9018 | KSR2110 | OC24

Keywords - MMBTSC945-L transistor datasheet

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