MMBT3904H Datasheet. Specs and Replacement
Type Designator: MMBT3904H 📄📄
SMD Transistor Code: 1AM
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT23
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MMBT3904H datasheet
Integrated in OVP&OCP products provider MMBT3904 SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT3906 ; Complementary to MMBT3906 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Sm... See More ⇒
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UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage VCEO=40V * Collector Dissipation PD(MAX)=350mW * Complementary to UTC MMBT3906 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT3904G-AE3-R SOT-23 E B C Tape Reel MMBT3904G-AL3-R SOT-323 E B C Tape... See More ⇒
MMBT3904EF NPN Silicon Transistor Descriptions PIN Connection Small signal application Switching application 3 Features Low collector saturation voltage 1 Low collector output capacitance 2 Complementary pair with MMBT3906EF SOT-523F Ordering Information Type NO. Marking Package Code Z MMBT3904EF SOT-523F Device Code ... See More ⇒
MMBT3904 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION A L General switching and amplification. 3 3 Top View C B 1 1 2 2 K E PACKAGING DIMENSION... See More ⇒
MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES SOT-523 A Epitaxial Planar Die Construction Dim Min Max L Complementary PNP Type Available A 1.500 1.700 (MMBT3906FW) B 0.750 0.850 Ideal for Medium Power Amplification and S Top View B C 0.700 0.900 Switching D 0.250 0.350 COLLECTOR V G G 0.900 1.100 3 3 H 0.0... See More ⇒
MMBT3904Z 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-923 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION General switching and amplification. (Top View) MARKING Date code 2 PACKAGING DIMENSION Millimet... See More ⇒
MMBT3904T NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 FEATURES Simplifies Circuit Design. We Declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping MMBT3904T MA 3000/Tape&Reel Millimeter Millimete... See More ⇒
MMBT3904W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-323(SC-70) Epitaxial Planar Die Construction Dim Min Max A Complementary PNP Type Available L A 1.800 2.200 (MMBT3906W) B 1.150 1.350 3 Ideal for Medium Power Amplification and S C 0.800 1.000 Top View B Switching ... See More ⇒
MMBT3904ZW 200 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free WBFBP-03E FEATURES Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION General switching and amplification. MARKING Millimeter Millimeter REF. REF. Min. Max. Min. Max. ... See More ⇒
MMBT3904 Taiwan Semiconductor Small Signal Product 300mW, NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-23 MECHANICAL DATA - Case... See More ⇒
MMBT3904L Taiwan Semiconductor Small Signal Product 300mW, NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-23 MECHANICAL DATA - Cas... See More ⇒
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Zowie Technology Corporation General Purpose Transistor NPN Silicon Halogen-free type Lead free product COLLECTOR 3 3 BASE 1 1 2 MMBT3904GH 2 EMITTER SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc THERMAL CHARACTERISTICS Char... See More ⇒
Zowie Technology Corporation General Purpose Transistor NPN Silicon Lead free product COLLECTOR 3 3 BASE 1 1 MMBT3904WG 2 2 SOT-323 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol ... See More ⇒
Zowie Technology Corporation General Purpose Transistor NPN Silicon Lead free product Halogen-free type COLLECTOR 3 3 BASE 1 1 MMBT3904WGH 2 2 SOT-323 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc THERMAL CHARACTERISTICS Ch... See More ⇒
MMBT3904 TRANSISTOR(NPN) SOT-23 FEA TURES Complementary Type The PNP Transistor MMBT3906 is Recommended Epitaxial Planar Die Construction (3)C MARKING 1AM 1AM (1)B (2)E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Curre... See More ⇒
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3904( MMBT3904) MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit ... See More ⇒
MMBT3904 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction MARKING 1AM MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Vo... See More ⇒
MMBT3904LT1 NPN SWITCHING TRANSISTOR 1. BASE 2. EMITTER 3. COLLECTOR FEATURES A Epitaxial planar die construction. SOT-23 E Complementary PNP type available Dim Min Max A 2.70 3.10 K B (MMBT3906). B 1.10 1.50 C 1.0 Typical Collector Current Capability ICM =200mA. D 0.4 Typical J D E 0.35 0.48 Collector-emitter Voltage VCEO=40V. G G 1.80 2.00 H 0.02 0.1 H ... See More ⇒
MMBT3904 COLLECTOR 3 General Purpose Transistor 3 NPN Silicon 1 1 BASE 2 2 SOT-23 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board (... See More ⇒
MMBT3904T General Purpose NPN SiliconTransistor 3 COLLECTOR 3 P b Lead(Pb)-Free 1 2 1 BASE SC-89 2 SOT-523F EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc Thermal Characteristics Characteristics Symbol Max Unit (1) Total... See More ⇒
MMBT3904W COLLECTOR 3 General Purpose Transistor 3 NPN Silicon 1 BASE 1 2 2 EMITTER SOT-323(SC-70) Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation TA=... See More ⇒
MMBT3904E NPN General Purpose Transistor 3 2 1 1 The MMBT3904E device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. SOT-1123 It is designed for general purpose amplifier applications and is housed in the SOT-1123 surface mount package. COLLECTOR This device is ideal for low-power surface mount applications 3 where board space is at a premium. FE... See More ⇒
FM120-M WILLAS MMBT3904DW1T1 THRU Dual General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optim... See More ⇒
FM120-M WILLAS MMBT3904LT1 THRU General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. RoHS product for packing code suffix "G", SOD-123H Low profile surfa... See More ⇒
FM120-M WILLAS THRU MMBT3904TT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features NPN ocess de Batch prSiliconsign, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURE Low profile surface mounted application in... See More ⇒
FM120-M WILLAS MMBT3904SLT1 THRU SOT-923 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline TRANSISTOR (NPN) Features FEATURES Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H SOT 923 Lo... See More ⇒
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT3904LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM 0.2 W (Tamb=25 ) 1. 3 Collector current ICM 0.2 A Collector-base voltage V(BR)CBO 60 V Operating and storage junction temperature range Unit mm TJ, Ts... See More ⇒
SOT-23 Plastic-Encapsulate Transistors FEATURES SOT-23 As complementary type, the PNP transistor MMBT3906 is Recommended Epitaxial planar die construction MARKING 1AM MARKING 1AM MARKING 1AM MARKING 1AM 1 BASE MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS 2 EMITTER Symbol Parameter Value Units Symbol Parameter Va... See More ⇒
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) FEATURES Complimentary to MMBT3906 MARKING 1AM MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-... See More ⇒
MMBT3904 NPN Silicon General Purpose Transistor for switching and amplifier applications. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Power Dissipation Ptot 350 mW O Junction Temperature Tj 150 C O Storag... See More ⇒
MMBT3904LTG General Purpose Transistors Features Package outline Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish 3 Maximum Ratings 1 Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc SOT 23 Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 200 mAdc 3 COLLECTOR Thermal Charact... See More ⇒
SMD Type Transistors NPN Transistors MMBT3904 (KMBT3904) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Complementary to MMBT3906 1 2 Marking 1AM +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VCEO 40 V... See More ⇒
SMD Type Transistors NPN Transistors MMBT3904T (KMBT3904T) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features Small Package 2 1 Complementary to MMBT3906T 3 0.3 0.05 +0.1 0.5 -0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collec... See More ⇒
SMD Type Transistors NPN Transistors MMBT3904W Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=40V Complementary to MMBT3906W 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Colle... See More ⇒
SMD Type Transistors NPN Transistors (KMBT3904-D) MMBT3904-D SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Complementary to MMBT3906-D 1 2 Marking 1AM +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VC... See More ⇒
SMD Type Transistors NPN Transistors MMBT3904DW (KMBT3904DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current -... See More ⇒
MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR Unit inch(mm) 225 mWatt VOLTAGE 40 Volt POWER SOT-23 FEATURES NPN epitaxial silicon, planar design 0.120(3.04) Collector-emitter voltage VCE = 40V 0.110(2.80) Collector current IC = 200mA Transition frequency fT>300MHz @ IC=10mAdc, VCE=20Vdc,f=100MHz Lead free in compliance with EU RoHS 2.0 0.056(1.40) Gr... See More ⇒
MMBT3904FN3 NPN GENERAL PURPOSE SWITCHING TRANSISTOR Unit inch(mm) DFN 3L POWER VOLTAGE 40 Volt 250 mWatt 0.042(1.05) FEATURES 0.037(0.95) NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 200mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) M... See More ⇒
MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR Unit inch(mm) SOT-323 150 mWatt VOLTAGE 40 Volt POWER FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V 0.087(2.20) Collector current IC = 200mA 0.070(1.80) Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard 0.054(1.35) 0.045(1.15) MEC... See More ⇒
General Purpose Transistor MMBT3904-G (NPN) RoHS Device Features SOT-23 -Epitaxial planar die construction 0.120 (3.04) 0.110 (2.80) -As complementary type, the PNP 3 transistor MMBT3904-G is recommended 0.055 (1.40) 0.047 (1.20) 1 2 0.080 (2.04) 0.070 (1.78) Collector 0.007 (0.18) 3 0.003 (0.08) 0.044 (1.11) 0.104 (2.64) 0.035 (0.89) 0.083 (2.10) 1 Base 0.004 (0.100)... See More ⇒
General Purpose Transistor MMBT3904-HF (NPN) RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -Epitaxial planar die construction 3 -As complementary type, the PNP 0.055(1.40) 0.047(1.20) transistor MMBT3904-HF is recommended 1 2 0.006(0.15) 0.079(2.00) Collector 0.002(0.05) 0.071(1.80) 3 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.089(2.25) 1 Base 0.004(0.10... See More ⇒
Product specification NPN SWITCHING TRANSISTOR MMBT3904 FEATURES Epitaxial planar die construction. Pb Complementary PNP type available Lead-free (MMBT3906). Collector Current Capability I =200mA. CM Collector-emitter Voltage V =40V. CEO MSL 1 APPLICATIONS SOT-23 General switching and amplification ORDERING INFORMATION Type No. Marking Pac... See More ⇒
GSTMMBT3904 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Lead(Pb)-Free amplifier and switch. Packages & Pin Assignments GSTMMBT3904F(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT3904F SOT-23 1AM Ordering Information GS P/N GSTMMBT3904 F Pb Free Co... See More ⇒
MMBT3904 NPN Switching Transistor MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit VCEO 40 Vdc Collector-Emitter Voltage VCBO 60 Vdc Collector-Base Voltage V 6.0 Vdc Emitter-Base Voltage EBO Ic 200 mAdc Collector Current-Continuous THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERIST... See More ⇒
MMBT3904M NPN General Purpose Amplifier Capable of 100m Watts of Power Dissipation and 200mA Ic Operating and Storage Junction Temperatures -55 to 150 Small Outline Surface Mount Package RoHS compliant / Green EMC Device Marking Code MMBT3904M 1N Maximum Ratings Ta = 25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60... See More ⇒
MMBT3904T NPN Transistor 3 2 Features 1.Base Small Package 2.Emitter 3.Collector Complementary to MMBT3906T 1 Simplified outline(SOT-523) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 200 mA Collecto... See More ⇒
MMBT3904W NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Total Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Temperature Range... See More ⇒
R UMW UMW MMBT3904 UMW MMBT3904 UMW MMBT3904 UMW MMBT3904 UMW MMBT3904 NPN Transistors Features SOT 23 Small Package Complementary to MMBT3906T MARKING 1. BASE 2. EMITTER 1AM 3. COLLECTOR Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 ... See More ⇒
MMBT3904 NPN Plastic-Encapsulate Transistor Features Pin Configurations V CE = 40V 3 COLLECTOR I C = 0.2A f T =300MHZ @VCE=20V, IC=10mA,f=100MHz 1 BASE 2 EMITTER General Description As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die constructio SOT-23 Plastic Package. Absolute Maximum Ratings @T =25 unless otherwise noted... See More ⇒
MMBT3904 TRANSISTOR (NPN) FEATURES Complementary to MMBT3906 MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT 23 Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector Power Dissipation 200 mW R JA Thermal Resistance From Junction To Ambient 625 /W T... See More ⇒
NPN SWITCHING TRANSISTOR Formosa MS MMBT3904 TRANSISTOR (NPN) FEATURES Pb Epitaxial planar die construction. Lead-free Complementary PNP type available (MMBT3906). Collector Current Capability Ic=200mA. Collector-emitter Voltage VCEO=40V. APPLICATIONS General switching and amplification SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT3904 1AM... See More ⇒
MMBT3904 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) SOT- 23 Features Complementary to MMBT3906 Marking 1AM Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V C EBO I Collector Current 200 mA C P Collector Power Dissipation 200 mW C R JA Thermal Resistance From Junction ... See More ⇒
MMBT3904 NPN SWITCHING TRANSISTOR FEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT3906). SOT-23 Collector Current Capability ICM =200mA. Collector-emitter Voltage VCEO=40V. MSL 1 APPLICATIONS General switching and amplification ORDERING INFORMATION Type No. Marking Package Code MMBT3904 1AM SOT-23 MAXIMUM RA... See More ⇒
MMBT3904 TRANSISTOR(NPN) FEA TURES Complementary Type The PNP Transistor MMBT3906 is Recommended Epitaxial Planar Die Construction MARKING 1AM SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector... See More ⇒
www.msksemi.com MMBT3904T-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) 3 MMBT3904T-MS 1. BASE FEATURES 2. EMITTER 1 Complementary to MMBT3906T 3. COLLECTOR 2 Small Package SOT-523 MARKING 1N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V ... See More ⇒
www.msksemi.com MMBT3904-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Complementary to MMBT3906-MS MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE 2. EMITTER SOT 23 MARKING 1AM 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Volta... See More ⇒
MMBT3904 GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN Silicon Epitaxial Planar Transistor For Switching And Amplifier Applications Collector-emitter Voltage VCE=40V Collector Current IC=200mA MECHANICAL DATA C E Available in SOT-23 Package Solderability MIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUM... See More ⇒
MMBT3904 NPN Transistor Features For Switching and AF Amplifer Applications. Silicon Epitaxial Chip. SOT-23 (TO-236) 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings (T = 25 ) A Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current I 200 mA C Power Dissipation P ... See More ⇒
Jingdao Microelectronics co.LTD MMBT3904 MMBT3904 SOT-23 NPN TRANSISTOR 3 FEATURES Complementary to MMBT3906 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 60 V 2.EMITTER Collector Emitter Voltage VCEO 40 V 3.COLLECTOR Emitter Base Voltage VEB... See More ⇒
MMBT3904T NPN Plastic-Encapsulate Transistors FEATURES Complementary to MMBT3906T Small Package MARKING MA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO SOT 523 V Collector-Emitter Voltage 40 V CEO 1. BASE V Emitter-Base Voltage 6 V EBO 2. EMITTER I Collector Current 200 mA C 3. COLL... See More ⇒
MMBT3904K SOT-23 Plastic-Encapsulate Transistors TRANSISTOR(NPN) Features Power Dissipation of 200mW High Stability and High Reliability Mechanical Data Marking 1AM SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) Par... See More ⇒
MMBT3904DW Descriptions Double silicon NPN transistor in a SOT-363 Plastic Package. Features Low current, Low voltage. Applications General purpose amplifier and switching. Equivalent Circuit Pinning PIN 1 4 Emitter PIN 2 5 Base PIN 3 6 Collector hFE Classifications & Marking See Marking Instructions. REV.08 1 of 6 MMBT3904DW Absolute Maximum Ratings(Ta... See More ⇒
TAK CHEONG SEMICONDUCTOR SOT-523 General Purpose Transistor NPN Silicon Surface Mount Plastic Package Green Product Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Symbol Parameter Value Units 3 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V 2 VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA 1 Power Dissipation PD 200... See More ⇒
TAK CHEONG SEMICONDUCTOR SOT-883 General Purpose Transistor NPN Silicon Surface Mount Plastic Package Green Product Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Symbol Parameter Value Units 3 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V 2 IC Collector Current 200 mA 1 Power Dissipation PD ... See More ⇒
MMBT3904 TRANSISTOR NPN TRANSISTOR NPN TRANSISTOR NPN TRANSISTOR NPN TRANSISTOR NPN FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching SOT-23 MARKING 1AM 1 BASE 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Par... See More ⇒
MMBT3904T General Purpose Transistor NPN Silicon Surface Mount Plastic Package Features Simplifies Circuit Design 1. Base RoHS Compliant 2. Emitter Green EMC 3. Collector Marking 1N Maximum Ratings (T =25 C unless otherwise noted) a Symbol Parameter Value Unit V Collector Base Voltage 60 V CBO V Collector Emitter Voltage 40 V CEO V Emitter Base Voltage 6 V EBO ... See More ⇒
MMBT3904 AO3400 SI2305 MMBT3904 TRANSISTOR (NPN) FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching SOT-23 MARKING 1AM 1 BASE 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Colle... See More ⇒
MMBT3904M MMBT3904M MMBT3904M SOT-723 MMBT3904M TRANSISTOR (NPN) FEATURE Complementary to MMBT3906M Small Package 1. BASE MARKING 1N 2. EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuou... See More ⇒
MMBT3904T MMBT3904T MMBT3904T TRANSISTOR(NPN) MMBT39 0 4T FEATURES SOT 523 Complementary to MMBT3906T Small Package MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASE 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 200 mA C PC C... See More ⇒
MMBT3904W MMBT3904W MMBT3904W MMBT3904W TRANSISTOR(NPN) MMBT39 0 4W for switching and amplifier applications SOT 323 3 1. BASE 1 2. EMITTER 2 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Total Power ... See More ⇒
RoHS COMPLIANT MMBT3904 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking 1AM Off Characteristics Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=1.0mAdc, IB=0 40 Collector-Base Voltage VCBO V IC=10uAdc, IE=0 60 Emitter-Base Voltage VEBO V IE=10uAdc, IC=0 6.0 Collec... See More ⇒
RoHS COMPLIANT MMBT3904T NPN General Purpose Amplifier Features Moisture Sensitivity Level 1 Surface mount package ideally Suited for Automatic Insertion Epoxy meets UL-94 V-0 flammability rating, halogen-free Mechanical Data ackage SOT-523 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking 1N Maximum R... See More ⇒
TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com MMBT3904 NPN Silicon General Purpose Transistor for switching and amplifier applications. SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Power Dis... See More ⇒
MMBT3904 MMBT3904 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT3906 Power Dissipation of 200mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT3904 1AM . Maximum R... See More ⇒
MMBT3904M MMBT3904M NPN General Purpose Transistor General description NPN General Purpose Transistor FEATURES SOT-723 General Purpose Transistors. VCEO 40V Ic 200mA PC 100mW Complementary to MMBT3906M Small Outline Surface Mount Package. RoHS Compliant / Green EMC. Type MMBT3904M Marking 1N Absolute Maximum Ratings(Ta=25 ) Para... See More ⇒
MMBT3904T MMBT3904T SOT-523 Silicon General Purpose Transistor (NPN) General description SOT-523 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight approx. 0.002g Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector... See More ⇒
MMBT3904W MMBT3904W SOT-323 Silicon General Purpose Transistor (NPN) General description SOT-323 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight approx. 0.001g Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector... See More ⇒
MMBT3904C MMBT3904C SOT-883 Silicon General Purpose Transistor (NPN) General description SOT-883 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight approx. 0.001g Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector... See More ⇒
TRANSISTOR (NPN) FEATURES Complementary Type The PNP Transistor MMBT3906 is Recommended SOT-23 Epitaxial Planar Die Construction 1 BASE 2 EMITTER 3 COLLECTOR MARKING 1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 ... See More ⇒
SOT-523 Plastic-Encapsulate Transistors MMBT3904T TRANSISTOR (NPN) FEATURES SOT 523 Complementary to MMBT3906T Small Package MARKING 1N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 60 V CBO 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR V Emitter-Base Voltage 6 V EBO I Colle... See More ⇒
MMBT3904W NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Marking Code 1E O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Total Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Stor... See More ⇒
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT3904 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 40 Vdc - Collector-Base Voltage VCBO 40 Vdc - Emitter-Base Voltage VEBO 6.0 Vdc - Co... See More ⇒
MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 40Volts POWER 225mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V. Collector current IC=0.2A. ansition frequency fT>300MHz @ Tr IC=10mAdc, VCE=20Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals So... See More ⇒
MMBT3904 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBT3906 Surface Mount device MECHANICAL DATA SOT-23 Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base Voltage V 60 V CBO Collec... See More ⇒
NPN MMBT3904 MMBT3904 TRANSISTOR (NPN) FEATURES Complementary Type The PNP Transistor MMBT3906 is Recommended SOT-23 Epitaxial Planar Die Construction 1 BASE 2 EMITTER 3 COLLECTOR MARKING 1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volta... See More ⇒
MMBT3904 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction MARKING 1AM SOT-23 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V 1. BASE VEBO Emitter-Base Vol... See More ⇒
MMBT3904 Silicon Epitaxial Planar Transistor(NPN) C E Features High Collector Current B Complementary To MMBT3906 SOT-23 Excel lent HFE Li nea r l ty Absolute Maximum Ratings* unless otherwise noted TA = 25 C Parameter Value Units Symbol V Collector-Base Voltage 60 CBO V VCEO 40 V Collector-Emitter Voltage V EBO Emitter-Base Voltage 6 V IC mA Collector Current -Continuo... See More ⇒
isc Silicon NPN Transistor MMBT3904 DESCRIPTION Low Voltage Use Ultra Super Mini Mold Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Telephony and professional communication equipment. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V C... See More ⇒
MMBT3904 NPN SWITCHING TRANSISTOR FEATURES Pb Epitaxial planar die construction. Lead-free Complementary PNP type available (MMBT3906). Collector Current Capability ICM =200mA. Collector-emitter Voltage VCEO=40V. MSL 3 APPLICATIONS General switching and amplification SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT3904 1AM SOT-23 MAXIMUM RATING @ Ta=... See More ⇒
Detailed specifications: MMBTSC3875-L, MMBTSC3875-O, MMBTSC3875-Y, MMBTSC945-H, MMBTSC945-L, MMDT2907ASG, MMDT3904SG, MMDT3906SG, 2SC1815, MMBT3906H, 2SA1163BL, 2SA1163GR, 2SA1213O, 2SA1213Y, 2SA1362GR, 2SA1586-GR, 2SA1586-O
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