All Transistors. 2SA2154CT-Y Datasheet

 

2SA2154CT-Y Datasheet and Replacement


   Type Designator: 2SA2154CT-Y
   SMD Transistor Code: 8F
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 1.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: CST3
 

 2SA2154CT-Y Substitution

   - BJT ⓘ Cross-Reference Search

   

2SA2154CT-Y Datasheet (PDF)

 ..1. Size:258K  toshiba
2sa2154ct-y 2sa2154ct-gr.pdf pdf_icon

2SA2154CT-Y

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current : V = -50V, I = -100mA (max) CEO C Unit: mm Excellent h linearity FE : h (I = -0.1 mA) / h (I = -2 mA)= 0.95 (typ.) FE C FE C High h h = 120 to 400 FE : FE Complementary to 2SC6026CT Absolute Maximum Ratings

 5.1. Size:151K  toshiba
2sa2154ct.pdf pdf_icon

2SA2154CT-Y

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current : VCEO = -50V, IC = -100mA (max) Unit: mm0.60.05 Excellent hFE linearity 0.50.03 : hFE (IC = -0.1 mA) / hFE (IC = -2 mA)= 0.95 (typ.) High hFE : hFE = 120 to 400 Complementary to 2SC6026CT Absolute M

 7.1. Size:151K  toshiba
2sa2154mfv.pdf pdf_icon

2SA2154CT-Y

2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current 0.80 0.05: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity 1 : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120~400 Complementary to 2SC6026MFV 3

 7.2. Size:145K  toshiba
2sa2154.pdf pdf_icon

2SA2154CT-Y

2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154 General-Purpose Amplifier Applications Unit: mm High voltage and high current : VCEO = -50 V, IC = -100 mA (max) Excellent hFE linearity : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE : hFE = 120~400 1 Complementary to 2SC6026 32 0.80.050.10.051.00.05Ab

Datasheet: 2SA1588-O , 2SA1588-Y , 2SA1721O , 2SA1721R , 2SA1832GR , 2SA1832O , 2SA1832Y , 2SA2154CT-GR , 2SD313 , 2SC2713-BL , 2SC2713-GR , 2SC3138-O , 2SC3138-Y , 2SC4117BL , 2SC4117GR , 2SC4213-A , 2SC4213-B .

History: BC637-10 | 3DD201

Keywords - 2SA2154CT-Y transistor datasheet

 2SA2154CT-Y cross reference
 2SA2154CT-Y equivalent finder
 2SA2154CT-Y lookup
 2SA2154CT-Y substitution
 2SA2154CT-Y replacement

 

 
Back to Top

 


 
.